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Thesis (Master)--İzmir Institute Of Technology, İzmir, 2006. / Keywords:Photodiode, Lateral inhibition, horseshoe crab, trilateration. Includes bibliographical references (leaves. 66-69).

Thesis (Ph. D.)--University of Texas at Austin, 2006. / Vita. Includes bibliographical references.

Thesis (Ph. D.)--University of Texas at Austin, 2005. / Supervisor: Joe C. Campbell. Vita. Includes bibliographical references.

Thesis (Ph. D.)--University of Texas at Austin, 2005. / Vita. Includes bibliographical references.

Thesis (Ph. D.)--University of Texas at Austin, 2005. / Vita. Includes bibliographical references.

Thesis (Ph. D.)--University of Texas at Austin, 2005. / Vita. Includes bibliographical references.

Ce travail porte sur la conception et la réalisation de photodiodes UTC en GaInAs/InP pour la détection de fortes puissances optiques jusqu'à 20 GHz. La solution choisie est une photodiode à éclairage par la face arrière compatible avec un report flip-chip sur des lignes hyperfréquences. La première partie de cette étude consacrée à l'optimisation simultanée de la bande passante et de la responsivité a mis en avant l'importance de la conception de l'absorbant et du collecteur. En particulier, l'introduction d'un champ électrique statique dans l'absorbant grâce à un graduel de dopage est essentielle pour atteindre simultanément une responsivité élevée (0,8 A/W à l,55 µm) et une large bande passante = 20 GHz sous fort photocourant). Dans un second temps, l'analyse des mécanismes de saturation a permis de dégager les principaux axes d'optimisation sous forte puissance: la réduction de la dépolarisation de la jonction, l'atténuation des effets de charge d'espace et l'amélioration de la dissipation thermique. Ainsi, une nouvelle structure de collecteur à dopage non uniforme est proposée. Elle permet de repousser les limites de saturation de la photodiode et permet d'atteindre des courants = 100 mA à 20 GHz, au meilleur niveau de l'état de l'art. Enfin, une étude théorique et expérimentale de la linéarité des photodiodes UTC de puissance est présentée. Les photodiodes développées montrent une excellente linéarité atteignant des points d'interception d'ordre 3 (IP3) de 35 dBm à 20 GHz faisant de ces composants de très bons candidats pour les liaisons optiques/hyperfréquences à large dynamique. / This work focuses on the design and fabrication of GaInAs/InP Uni-Traveling-Carrier (UTC) Photodiodes (PDs) for high optical power detection up to 20 GHz. The selected solution consists of a back-side ilIuminated PD compatible with flip-chip mounting on microwave transmission lines. The first section of this study is dedicated to the optimisation of both bandwidth and responsivity, simultaneously. It demonstrates how important the design of absorption and collection layers is. ln particular, the introduction of a static electric field in the absorption layer, owing to a graduaI doping, is essential to achieve, simultaneously, a high responsivity (0.8 A/W at 1.55 µm) and a large bandwidth (= 20 GHz under high photocurrent). Secondly, the saturation mechanisms in a UTC structure are analysed. Reducing the junction bias variation, mitigating the space charge effects and enhancing the heat power dissipation are demonstrated to be the main axes for design optimization under high power. Therefore, a new design of a non-uniformly doped collector is proposed. It reduces saturation limitations and leads to state-of-the-art saturation current =100 mA at 20 GHz. FinaIly, a theoretical and experimental study of high power UTC-PDs linearity is presented. The developed PDs show a high linearity and achieve third order intercept points (IP3) op to 35 dBm at 20 GHz, which makes them good candidates for analog photonic links that need a high dynamic range.

Avalanche photodiodes are the primary choice for photodetection in optical access networks, due to their capacity to meet the current requirements of bandwidth and sensitivity introduced by NG-PON2. This work provides an effective tool for modeling and predicting the operation of an avalanche photodiode, paving the way to making better performing receivers. We employed Lumerical to obtain several steady state and transient parameters for a silicon germanium SACM waveguide avalanche photodiode, where close agreement is illustrated between our findings and measurements reported on fabricated devices. The utility of our work is further demonstrated by implementing and modeling a device, designed to meet certain fabrication specifications, where optimization guidelines are suggested afterwards. By providing an accurate approximation of the avalanche photodiode operation, we offer a cost-effective approach to address the problem of fabricating better devices in optical access networks. The introduced methods can be similarly used for other types of photodiodes, contributing to a vast range of applications. / Graduate

Thesis (Ph. D.)--University of Texas at Austin, 2003. / Vita. Includes bibliographical references. Available also from UMI Company.