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  • About
  • The Global ETD Search service is a free service for researchers to find electronic theses and dissertations. This service is provided by the Networked Digital Library of Theses and Dissertations.
    Our metadata is collected from universities around the world. If you manage a university/consortium/country archive and want to be added, details can be found on the NDLTD website.
251

Modeling of narrow-width effect in MOSFET /

Lai, Pui-to. January 1984 (has links)
Thesis--Ph. D., University of Hong Kong, 1985.
252

Characterization of hot-carrier induced degradation via small-signal characteristics in mosfets /

Lau, Mei Po Mabel. January 2001 (has links) (PDF)
Thesis (Ph. D.)--University of Queensland, 2002. / Includes bibliographical references.
253

Monte Carlo simulation of charge transport in Si-based heterostructure transistors

Wang, Xin 28 August 2008 (has links)
Not available / text
254

Analyses of device characteristics in low voltage p-, new material n-, and dual-channel organic field-effect transistors

Jeong, Yeon Taek, 1971- 29 August 2008 (has links)
Not available / text
255

Bandgap engineering in vertical MOSFETs

Chen, Xiangdong, 1972- 07 March 2011 (has links)
Not available / text
256

The growth and characterization of group III-nitride transistor devices grown by metalorganic chemical vapor deposition

Wong, Michael Ming 27 July 2011 (has links)
Not available / text
257

Semiclassical Monte Carlo simulation of nano-scaled semiconductor devices

Ghosh, Bahniman, 1971- 18 August 2011 (has links)
Not available / text
258

Establishing structure : performance relationships in semiconducting polymer field effect transistors

Schüttfort, Torben January 2012 (has links)
No description available.
259

Control of Dopant Type and Density in Colloidal Quantum Dot Films

Furukawa, Melissa 21 March 2012 (has links)
Colloidal quantum dots (CQDs) are an inexpensive and solution processable photovoltaic(PV) material reaching modest efficiencies of 6%. However, doping quantum dots still remains a challenge. This thesis explores the level of doping in lead sulfide (PbS)CQDs by surface ligands and bulk doping within the quantum dot lattice using metals. In light of the knowledge that oxygen creates traps on the surface of PbS CQDs, we have turned to the use of oxygen-free fabrication. We find that under a nitrogen environment, PbS CQD films are n-type and tunable in doping by use of halide ions. We show for the first time control over the doping density of n-type CQD films over a wide range. We also show the ability to fabricate p-type PbS films with high doping density that are compatible with n-type films. This compatibility enabled us to make the world’s first CQD homojunction PV device.
260

Control of Dopant Type and Density in Colloidal Quantum Dot Films

Furukawa, Melissa 21 March 2012 (has links)
Colloidal quantum dots (CQDs) are an inexpensive and solution processable photovoltaic(PV) material reaching modest efficiencies of 6%. However, doping quantum dots still remains a challenge. This thesis explores the level of doping in lead sulfide (PbS)CQDs by surface ligands and bulk doping within the quantum dot lattice using metals. In light of the knowledge that oxygen creates traps on the surface of PbS CQDs, we have turned to the use of oxygen-free fabrication. We find that under a nitrogen environment, PbS CQD films are n-type and tunable in doping by use of halide ions. We show for the first time control over the doping density of n-type CQD films over a wide range. We also show the ability to fabricate p-type PbS films with high doping density that are compatible with n-type films. This compatibility enabled us to make the world’s first CQD homojunction PV device.

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