This thesis presents the first use of a novel direct-write, non-line-of-sight, two-photon photoelectrochemical etching technique for etching of single crystal silicon carbide substrates. The use of this technique has resulted in structuring of 3-dimensional structures in high quality single crystal silicon carbide wafers. The 3-dimensional structures demonstrated cannot be formed by any single or combination of traditional silicon carbide machining techniques. This thesis outlines the development of the optical, electrical, and diagnostic components required to achieve two-photon photoelectrochemical etching in silicon carbide. The diagnostic sub-assemblies --a single pixel confocal detector assembly and an in-situ optical microscope assembly-- and their design is also discussed. Several etched structures using the two-photon photoelectrochemical etching technique are presented.