151 |
The Nature of Films of the Transition Elements Formed at Low TemperaturesLeung, P. K. January 1975 (has links)
No description available.
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152 |
Uniqueness of elastic-plastic interface motionsKenning, M. J. January 1974 (has links)
No description available.
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153 |
Thermal Energy Transfer Across an InterfaceMishta, D. R. January 1975 (has links)
No description available.
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154 |
Non-stoichiometric titanium dioxide; ultra-thin film growth, doping and adsorption of metalorganicsMcCavish, N. D. January 2005 (has links)
No description available.
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155 |
Electroluminescence of Mn-Implanted ZnS Thin FilmsLawther, C. January 1976 (has links)
No description available.
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156 |
Preparation and properties of bismuth ferrite-lead titanate thin films prepared by pulsed laser depositionKhan, Mikael Ali January 2008 (has links)
Development of ferroelectric thin films has been a subject of intensive investigation in recent years due to their promise in next· generation electronic devices. This report encompasses an· initial investigation into the pulsed laser deposition of thin films of bismuth ferrite-lead titanate (l-x)BiFe03-xPbTi03 (BFPT) on platinized silicon (Pt/Si) substrates. The work presented lays down optimised processing conditions for the preparation of BFPT thin films on Pt/Si substrates and presents an understanding of structure-property relationships of this material system thereby providing a firm platform to go forward and exploit this material in various thin film applications, particularly those requiring large remanent polarizations. The growth conditions were optimized by changing a range of process .parameters such as background oxygen pressure, substrate temperature and target to substrate distance which have a critical influence on the film structure and properties. The film structure was studied using X-ray diffraction and scanning electron microscopy. The ferroelectric properties have been presented in terms of typical polarization-field P-E hysteresis behaviour, in conjunction with leakage current measurements and impedance spectroscopy. Investigation into the electrical properties indicates a large increase in the remanent polarization close to the morphotropic phase boundary, making these compositions very attractive for commercial thin film applications e.g. ferroelectric memories.
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157 |
A Photoelectric Study on Thin Films of RubidiumHall, T. W. January 1973 (has links)
No description available.
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158 |
A study of the relationships between the deposition parameters, film structure and magnetic properties of nife thin filmsChapman, V. B. January 1979 (has links)
No description available.
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159 |
The production and properties of thin polymer films prepared by vacuum evaporationLuff, P. P. January 1969 (has links)
No description available.
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160 |
A Study of NMR Properties of ³He Adsorbed on GrafoilCowan, B. P. January 1976 (has links)
Nuclear magnetic relaxation times T and T2 have . 1 3 been measured at IMHz and 2MHz for He adsorbed on Grafoil for coverages between O. 1 and 1. 2 monolayers. Results indicate that for low coverages the film has a high mobility while at high coverages it behaves like a solid with Quantum Tunneling. Most of the data can be explained in terms of dipole - dipole interaction and interaction of the spins with the local fields in the Grafoil. The theory of relaxation in two - dimensional systems by these mechanisms is presented
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