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The Global ETD Search service is a free service for researchers
to find electronic theses and dissertations. This service is
provided by the
Networked Digital Library of Theses and Dissertations.
Our metadata is collected from universities around the world. If you manage a university/consortium/country archive and want to be added, details can be found on the NDLTD website.
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Showing 31 to 40 of 871 (0.015 seconds)| 31 |
Turbulent boundary layer along a streamwise cornerMojola, Olayiwola Olusiji January 1972 (has links)
No description available.
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| 32 |
On the accuracy and efficiency of Godunov-type methods in various compressible flowsBagabir, Ahmed Mohamed January 2000 (has links)
No description available.
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| 33 |
Non-Newtonian flow of polymer solutions around spheres and through porous mediaHaward, Simon James January 2002 (has links)
No description available.
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| 34 |
An inviscid model for the fluid forces induced by vortex shedding from a circular cylinderDownie, M. J. January 1981 (has links)
No description available.
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| 35 |
3-D fibre optic laser Doppler anemometry for applications in turbomachineryByrne, Gerald January 2001 (has links)
No description available.
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| 36 |
Slender bodies of revolution at incidenceBostock, B. R. January 1972 (has links)
No description available.
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| 37 |
A study of reactive sputter etching by directed ion beams and R.F. plasmasRevell, Peter James January 1982 (has links)
This work compares the alternative methods of etching silicon semiconductor materials. Conventional methods of pattern delineation using aqueous etchants are being replaced for some applications by dry processing. The reasons for the move towards plasma and ion beam etching are examined particularly in relation to very large scale integration (VLSI) technology and the required reduction in feature size. A review of the published information on the use of reactive gas plasmas shows that this etching process is capable of producing vertical profiles without loss of pattern definition in lum. features. Noble gas ion beam sputtering, another alternative dry etching process, has some advantages over plasma etching but does not compare favourably in terms of material etch-rate selectivity and profile replication. Reactive ion beams produced by heated filament sources etch silicon compounds more rapidly than argon beams, but undesirable topographical features such as "facets" and "trenches" may be observed after beam energies greater than about 1 keV have been used. The total beam current and current distribution have been determined for a medium sized (B93) Saddle-Field source. The etch rates of several materials were greater with a fluorocarbon beam than with an argon beam produced by this source. Examination of profiles produced by etching silicon dioxide with beams from the B93 source injected with either CHF3 or CF4 showed no evidence of sputtering induced artefacts or lateral attack due to the diffusion of chemically reactive fragments. The results of reactive ion beam etching (RIEB) with a Saddle-Field source suggest that chemical attack predominates over sputtering. A two stage mechanism is proposed in which the incident particles cause bond cleavage at the surface followed by addition and abstraction reactions, leading ultimately to the formation of volatile products. The possible commercial applications of RIBE with Saddle-Field sources are discussed, and suggestions are advanced for further work in this area.
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| 38 |
On the spectral emission of non-Maxwellian plasmasBryans, Paul January 2005 (has links)
No description available.
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Quantum interference and ionisation effects on spectral properties of high harmonics generated in gasBrunetti, Enrico January 2005 (has links)
No description available.
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| 40 |
Experimental and computational K-shell spectroscopy of laser produced plasmasHall, Iain Michael January 2006 (has links)
No description available.
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