- About
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The Global ETD Search service is a free service for researchers
to find electronic theses and dissertations. This service is
provided by the
Networked Digital Library of Theses and Dissertations.
Our metadata is collected from universities around the world. If you manage a university/consortium/country archive and want to be added, details can be found on the NDLTD website.
Search results
Showing 381 to 390 of 2062 (0.018 seconds)| 381 |
Laser Photodissociation of Molecular Ion BeamsSarre, P. J. January 1976 (has links)
No description available.
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| 382 |
Pumping Mechanisms in Gas LasersWillgoss, R. A. January 1974 (has links)
No description available.
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| 383 |
Computer and optical methods in electron microscopyToms, N. January 1972 (has links)
No description available.
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| 384 |
Laser damage in transparent dielectricsZafar, M. A. January 1972 (has links)
No description available.
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| 385 |
Microwave cavities as electron lensesOldfield, Laurence Colin January 1974 (has links)
No description available.
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| 386 |
The interaction of high intensity ruby laser radiation with some group VI A dichalcogenidesDoviak, J. M. January 1971 (has links)
No description available.
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| 387 |
Measurement of optically generated charge with a Si delta-doped GaAs electrometry structureBaker, Thomas Sidney Hugh January 2009 (has links)
GaAs is a light sensitive material, that optical as well as electronic components can be integrated onto a single device. This dissertation describes the fabrication and measurement of a novel photo detector, which incorporates both an intentionally designed optical absorption region with two nanowires transistor electrometers by trench isolation. The transistor electrometers operate as Single Electron Transistors at 4.2K and below. Above this, they operate as Conventional Field Effect Transistors. With optical irradiation focused on the absorption region, an applied bias separates the photo generated electron and hole. These migrate in the applied field towards the appropriate transistor electrometer for measurement. Two transistor electrometers were chosen, to see that if it was possible to derive noise benefit from correlating both transistors together. The ultimate goal of this would be for low noise single photon detection. Electrical characterization was performed at cryogenic temperatures. The application of low power unfocused irradiation onto a Single Electron Transistor, showed current steps with intensity. Even though this did not reach the single photon level, an average of 4.1 photons per pulse was regularly detectable. This was caused from the emptying of trapped charge in the single electron transistor nanowire. It is believed that with more sensitive measurement techniques, this method can be optimized for single photon detection.
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| 388 |
Triplet state studies by laser and conventional flash photolysisBanfield, T. L. January 1969 (has links)
No description available.
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| 389 |
Electron spectrometry in the electron microscopeHills, R. P. T. January 1973 (has links)
No description available.
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| 390 |
The Dynamical Theory of Contrast in the Electron MicroscopeRichards, C. G. January 1976 (has links)
No description available.
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