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The Global ETD Search service is a free service for researchers
to find electronic theses and dissertations. This service is
provided by the
Networked Digital Library of Theses and Dissertations.
Our metadata is collected from universities around the world. If you manage a university/consortium/country archive and want to be added, details can be found on the NDLTD website.
Search results
Showing 51 to 60 of 339 (0.015 seconds)| 51 |
Rubber modified bituminous mixtures : effects of natural rubber powders and latex on thin-pavement bituminous mixtures in repeated flexureMat, Jamaludin January 1989 (has links)
No description available.
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| 52 |
Improvements to anlab formulae for industrial shade passingMcDonald, R. January 1980 (has links)
No description available.
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| 53 |
Three-dimensional aspects of colour discriminationCheung, M. January 1984 (has links)
No description available.
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| 54 |
The mechanical performance of automotive V-beltsCowburn, D. January 1984 (has links)
No description available.
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| 55 |
Effect of mix additives on the characteristics of bituminous road mixtures : The effect of mix additives on the fatigue and strength characteristics of bituminous highway pavement materials was investigated by means of indirect tensile testingRafati-Afshar, F. January 1986 (has links)
No description available.
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| 56 |
Heat pulse experiments below 1K and their application to the study of aluminiumShaw, C. J. January 1980 (has links)
No description available.
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| 57 |
Experimental studies of two dimensional foamKader, Atef Abd El January 1998 (has links)
No description available.
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| 58 |
A computer modelling of some mechanical properties of perforated and porous materialsForskitt, M. January 1988 (has links)
No description available.
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| 59 |
Permanent deformation in bituminous mixturesKhanzada, Shahab January 2000 (has links)
No description available.
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| 60 |
Some heavy doping effects in siliconSaunderson, P. A. January 1983 (has links)
In this thesis the theoretical and experimental concentration and temperature dependent band gap narrowing in uncompensated n-type silicon is studied. Electron-electron and electron-impurity interaction energies are used to calculate the theoretical band gap narrowing in the plasmon-pole approximation. These reveal an increase of 14 meV in the band gap narrowing at 300 K for a donor concentration of 3.10(^19) cm(^-3) above the zero temperature value of 95 meV. For higher concentrations the degeneracy deepens and the zero and finite temperature band gap narrowing curves converge. Localized states in the band gap resulting from local fluctuations in the electron-impurity interaction, a result of the random position of the impurities, are also considered. When the analysis includes the effect on the host band of the electron-impurity interactions calculated above the resulting density of states in the band tail of uncompensated silicon is found to be ten times smaller than is usually imagined. Using published values for the minority carrier mobility both the band gap narrowing and the minority carrier lifetime are experimentally determined in the buried n-type layer of an Integrated Injection Logic transistor. The transport factor in the base of a parasitic pnp transistor formed by the p-type substrate, buried layer and p-type Integrated Injection Logic transistors base region is calculated by monitoring the substrate current density and minority carrier injection into the buried layer. A range of temperatures from 200 K to 400 K are used to determine the temperature dependence of the minority carrier mobility in the buried layer (T(^0)). A band gap narrowing of (100 ± 15) meV) and minority carrier lifetime of (30 ± 10) ns are measured for the buried layer (2.4.10(^19) cm(^-3)).
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