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The acoustoelectric effect in graphene and graphene nanoribbons (GNRs) on lithium niobate surface acoustic wave (SAW) devices was studied experimentally. Monolayer graphene produced by chemical vapour deposition was transferred to the SAW devices. The photoresponse of the acoustoelectric current (Iae) was characterised as a function of SAW frequency and intensity, and illumination wavelength (using 450 nm and 735 nm LEDs) and intensity. Under illumination, the measured Iae increased by more than the measured decrease in conductivity, while retaining a linear dependence on SAW intensity. The latter is consistent with the piezoelectric interaction between the graphene charge carriers and the SAWs being described by a relatively simple classical relaxation model. A larger increase in Iae under an illumination wavelength of 450 nm, compared to 735 nm at the same intensity, is consistent with the generation of a hot carrier distribution. The same classical relaxation model was found to describe Iae generated in arrays of 500 nm-wide GNRs. The measured acoustoelectric current decreases as the nanoribbon width increases, as studied for GNRs with widths in the range 200 – 600 nm. This reflects an increase in charge carrier mobility due to increased doping, arising from damage induced at the nanoribbon edges during fabrication. 2 Lastly, the acoustoelectric photoresponse was studied as a function of graphene nanoribbon width (350 – 600 nm) under an illumination wavelength of 450 nm. Under illumination, the nanoribbon conductivity decreased, with the largest percentage decrease seen in the widest GNRs. Iae also decreased under illumination, in contrast to the acoustoelectric photoresponse of continuous graphene. A possible explanation is that hot carrier effects under illumination lead to a greater decrease in charge carrier mobility than the increase in acoustoelectric attenuation coefficient. This causes the measured decrease in Iae.

Acousto-electric (AE) effect comes from an interaction between electrical current and acoustic pressure generated when acoustic waves travel through a conducting material. It currently has two main application areas, ultrasound current source density imaging (UCSDI) and AE hydrophone. UCSDI can detect the current direction by modulating the dipole field with ultrasound pulse, and it is now used to form 3D imaging of dipole changing in one period of treatment, such as arrhythmia in the heart and epilepsy in the brain. As ultrasound pulse passes through electrical field, it convolutes or correlates with the inner product of the electric fields formed by the dipole and detector. The polarity of UCSDI is not determined by Doppler effect that exists in pulse echo (PE) signal, but the gradient of lead field potentials created by dipole and recording electrode, making the base-banded AE voltage positive at the anode and negative at cathode. As convolution shifts spectrum lower, the base band frequency for polarity is different from the center frequency of AE signal. The simulation uses the principles of UCSDI, and helps to understand the phenomena in the experiment. 3-D Fast Fourier Transform accelerates the computing velocity to resolve the correlation in the simulation of AE signal. Most single element hydrophones depend on a piezoelectric material that converts pressure changes to electricity. These devices, however, can be expensive, susceptible to damage at high pressure, and/or have limited bandwidth and sensitivity. An AE hydrophone requires only a conductive material and can be constructed out of common laboratory supplies to generate images of an ultrasound beam pattern consistent with more expensive hydrophones. Its sensitivity is controlled by the injected bias current, hydrophone shape, thickness and width of sensitivity zone. The design of this device needs to be the tradeoff of these parameters. Simulations were made to optimize the design with experimental validation using specifically fabricated devices composed of a resistive element of indium tin oxide (ITO).

The acoustoelectric effect in graphene is studied in a graphene/lithium niobate hybrid system, which was prepared by transferring large area single-layer graphene grown on copper onto lithium niobate SAW devices. The transfer of momentum from the surface acoustic waves (SAWs), generated on the surface of the lithium niobate, to the carriers in graphene results in an attenuation and velocity shift of the wave, and gives rise to an acoustoelectric current. The acoustoelectric current, and the amplitude and velocity of the SAW are measured using a sourcemeter and oscilloscope, respectively. Macroscopic acoustoelectric current flowing over several hundred micrometers is demonstrated in graphene, which is measured to be directly proportional to the SAW intensity and frequency at room temperature. A relatively simple classical relaxation model, which describes the piezoelectric interaction between SAWs and the carriers in a two-dimensional electron system, is used to explain the experimental observations. The investigation of the acoustoelectric current as a function of temperature demonstrates the ability of SAWs of different wavelengths to probe graphene at different length scales. By tuning the conductivity of the graphene through the use of a top gate, voltage-controlled phase (velocity) shifters are demonstrated. The acoustoelectric current measured as a function of gate voltage demonstrates that an equal density of electrons and holes are transported at the charge neutrality point, reflecting the unique properties of graphene.

Ultrasound Current Source Density Imaging (UCSDI) is a noninvasive modality for mapping electrical activities in the body (brain and heart) in 4-dimensions (space + time). Conventional cardiac mapping technologies for guiding the radiofrequency ablation procedure for treatment of cardiac arrhythmias have certain limitations. UCSDI can potentially overcome these limitations and enhance the electrophysiology mapping of the heart. UCSDI exploits the acoustoelectric (AE) effect, an interaction between ultrasound pressure and electrical resistivity. When an ultrasound beam intersects a current path in a material, the local resistivity of the material is modulated by the ultrasonic pressure, and a change in voltage signal can be detected based on Ohm's Law. The degree of modulation is determined by the AE interaction constant K. K is a fundamental property of any type of material, and directly affects the amplitude of the AE signal detected in UCSDI. UCSDI requires detecting a small AE signal associated with electrocardiogram. So sensitivity becomes a major challenge for transferring UCSDI to the clinic. This dissertation will determine the limits of sensitivity and resolution for UCSDI, balancing the tradeoff between them by finding the optimal parameters for electrical cardiac mapping, and finally test the optimized system in a realistic setting. This work begins by describing a technique for measuring K, the AE interaction constant, in ionic solution and biological tissue, and reporting the value of K in excised rabbit cardiac tissue for the first time. K was found to be strongly dependent on concentration for the divalent salt CuSO₄, but not for the monovalent salt NaCl, consistent with their different chemical properties. In the rabbit heart tissue, K was determined to be 0.041 ± 0.012 %/MPa, similar to the measurement of K in physiologic saline: 0.034 ± 0.003 %/MPa. Next, this dissertation investigates the sensitivity limit of UCSDI by quantifying the relation between the recording electrode distance and the measured AE signal amplitude in gel phantoms and excised porcine heart tissue using a clinical intracardiac catheter. Sensitivity of UCSDI with catheter was 4.7 μV/mA (R² = 0.999) in cylindrical gel (0.9% NaCl), and 3.2 μV/mA (R² = 0.92) in porcine heart tissue. The AE signal was detectable more than 25 mm away from the source in cylindrical gel (0.9% NaCl). Effect of transducer properties on UCSDI sensitivity is also investigated using simulation. The optimal ultrasound transducer parameters chosen for cardiac imaging are center frequency = 0.5 MHz and f/number = 1.4. Last but not least, this dissertation shows the result of implementing the optimized ultrasound parameters in live rabbit heart preparation, the comparison of different recording electrode configuration and multichannel UCSDI recording and reconstruction. The AE signal detected using the 0.5 MHz transducer was much stronger (2.99 μV/MPa) than the 1.0 MHz transducer (0.42 μV/MPa). The clinical lasso catheter placed on the epicardium exhibited excellent sensitivity without being too invasive. 3-dimensional cardiac activation maps of the live rabbit heart using only one pair of recording electrodes were also demonstrated for the first time. Cardiac conduction velocity for atrial (1.31 m/s) and apical (0.67 m/s) pacing were calculated based on the activation maps. The future outlook of this dissertation includes integrating UCSDI with 2-dimensional ultrasound transducer array for fast imaging, and developing a multi-modality catheter with 4-dimensional UCSDI, multi-electrode recording and echocardiography capacity.

<div>Some of the biggest challenges with analog signal processing at radio frequencies (RF) are: RF loss at the frequency of interest, large enough fractional bandwidth, and sufficient delay. It is difficult to achieve enough delay in radio front ends using a purely electromagnetic approach since it is limited to a fraction of the speed of light. A solution has been the use of acoustic RF devices, such as surface acoustic wave (SAW) delaylines and MEMS filters. For some acoustic RF devices, like high performance Transmit and Receive SAW correlators, the long delays introduce significant propagation losses. These propagation losses can be compensated within the device by integrating a low noise amplifier into the acoustic correlator architecture. This can be accomplished by designing the SAW correlator on a high performance acoustoelectric (AE) platform. The AE effect is a phenomenon where nearby free carriers can interact with a travelling acoustic wave. Free carriers in close proximity to a piezoelectric material can interact with a travelling acoustic wave through its periodic potential. When a drift field is applied, depending on the relative velocity difference between the free carriers and acoustic wave, energy can either be transferred into (amplification) or out of (attenuation) the acoustic wave. </div><div><br></div><div>This thesis investigates the design and feasibility of AE MEMS devices on several Lithium Niobate (LN) platforms. First, the key acoustic and free carrier parameters are discussed and optimized for an ideal high performance AE material stack. In order to debug and analyze the performance of intermediate steps in the process of making high performance AE MEMS devices, three LN-based platforms are used throughout this work. These platforms help further examine some of the key challenges associated with making a high performance AE platform, like wafer bonding, fabrication, device design, and device operating conditions. These material stacks consist of: thin film LN bonded to a silicon wafer (LNOSi), thin film LN bonded to a silicon on insulator wafer (LNOSOI), and epitaxial indium gallium arsenide bonded to a LN wafer (InGaAs-LN).</div><div><br></div><div>The acoustic and piezoelectric performance of SAW devices on the LNOSi and LNOSOI platforms are modeled using COMSOL Multiphysics. A full study is performed to determine the piezoelectric coupling coefficient variation vs. device wavelength, propagation angle, transducer metal, and acoustic mode. A lumped element cross-field Mason model is modified to include substrate conductivity and simulated in Advanced Design System (ADS) software. SAW delaylines are then fabricated with both aluminum (Al) and gold (Au) Interdigital Transducers (IDT) and measured to compare to the simulated results. The analytical AE theory is then presented and calculations are performed to determine the desired (optimum) carrier concentration for AE devices. In addition to the 1D analytical AE model, initial work is done on developing a generalized 2D Finite Element Analysis (FEA) AE modeling scheme in COMSOL. The results for a piezoelectric semiconductor bulk acoustic wave (BAW) resonator and SAW delayline amplifier are presented. </div><div><br></div><div>On the LNOSi platform, gate controlled passive AE delaylines are fabricated and measured to examine the effects of LN bonding on Silicon free carrier concentrations and interface charges. Then, the fabrication and initial measurement results for doped Silicon AE delayline amplifiers are outlined. Based on the device design, the non-reciprocal nature of the AE effect can be used for more than just amplification and loss compensation. Using the InGaAs-LN platform, several classes of AE devices are designed and tested in pulsed mode operation. First, a series of segmented AE delayline amplifiers are measured to look at how the relative AE gain performance and input DC power scale with acoustic frequency, segment unit length, and number of segments. By taking advantage of the non-reciprocal shift in acoustic velocity, a dual-voltage AE delayline phase shifter is designed and tested. Routing of the acoustic waves between parallel delaylines can be accomplished through multistrip couplers (MSC) and can increase the library of possible AE device designs. The simplest example is a 3-port AE switch, which is designed and tested. The demonstration of these AE MEMS devices opens the door to a larger library of non-reciprocal acoustic devices utilizing the AE effect in high performance integrated material platforms.</div>

<p dir="ltr">Rapid evolution in wireless technology and the increasing demand for high bandwidth communication for 5G/6G and the Internet of Things (IoT) have necessitated a growing number of components in radio front-end modules in an increasingly overcrowded radio frequency (RF) spectrum. Low-cost ad-hoc radios have drawn consumer interest, enabling new devices like microelectromechanical (MEMS) resonators for on-chip clocking, frequency-selective filters, RF signal processing, and spectral sensing for their small footprint and low power consumption. Gallium nitride (GaN) is an attractive electromechanical material due to its high coupling coefficient, acoustic velocity, and low viscoelastic losses. These benefits enable high-Q MEMS resonators in GaN monolithic microwave integrated circuits (MMICs) with scaling capability up to mm-wave frequencies, making this technology platform a contender for high-performance programmable radios in RF/mm-wave, sensors for harsh environments, and information processing in quantum systems.</p><p dir="ltr">The bias-dependent control mechanism of the 2D electron gas (2DEG) in GaN heterostructures can be exploited to design different switchable and tunable devices for reconfigurable MEMS components. This work presents, for the first time, a comprehensive study of the electromechanical performances of different transduction mechanisms in switchable GaN MEMS resonators. A unique OFF-state shunt design, where the 2DEG in an AlN/GaN heterostructure is utilized to control electromechanical transduction in Lamb mode resonators, is also experimentally demonstrated in this work. To make a valid comparison among switchable transducers, equivalent circuit models are developed to extract key parameters from the measurements by fitting them in both ON and OFF states. The switchable transducer with Ohmic interdigitated transducers (IDTs) and Schottky control gate shows superior performance among the designs under consideration with complete suppression of the mechanical mode in the OFF state and a maximum frequency-quality factor product of 5x10¹²s^-1 and a figure-of-merit of 5.18 at 1GHz in the ON state.</p><p dir="ltr">Over the past few years, there have been numerous efforts to scale the frequencies of MEMS devices in the GaN platform towards mm-wave frequencies. However, challenges remain due to the multi-layer thick buffer, typical in the growth of GaN epilayer on a substrate. This work presents the investigation of SweGaN QuanFINEbuffer-free and ultrathin GaN-on-SiC for the performance of surface acoustic wave (SAW) devices beyond 10GHz. Finite element analysis (FEA) is performed to find the range of frequencies for the Sezawa mode in the structure. Transmission lines and resonators are designed, fabricated, and characterized. Modified Mason circuit models are developed for each class of devices to extract critical performance metrics and benchmark with the state-of-the-art and theoretical limits for GaN. Sezawa modes are observed at frequencies up to 14.3GHz, achieving a record high in GaN MEMS to the best of our knowledge. A maximum piezoelectric coupling of 0.61% and frequency-quality factor product of 6x10¹²s^-1 are achieved for Sezawa resonators at 11GHz, with a minimum propagation loss of 0.26dB/λ for the two-port devices. The devices also exhibit high linearity with input third-order intercept points (IIP3) of 65dBm at 9GHz.</p><p dir="ltr">This work also investigates tunable acoustoelectric (AE) devices in the QuanFINE platform, leveraging its inherent 2DEG in the AlGaN/GaN heterostructure. Using 9.7GHz Sezawa mode acoustic delay lines, we report the highest frequency of AE in GaN to date. Active and passive AE devices are designed for voltage-dependent non-reciprocity and propagation loss without modification to the standard process for the High Electron Mobility Transistors (HEMTs) in MMICs. Drain/source Ohmic contacts control the drift velocity of the 2DEG, and the Schottky gate modulates 2DEG carrier concentration, resulting in a 30dB/cm separation between forward and reverse acoustic waves for a 2.56kV/cm lateral DC electric field and a maximum change in propagation loss of 50dB/cm for -5V DC at the control gate, respectively. The QuanFINEtechnology with AlGaN/GaN heterostructure enables a platform for switchable MEMS resonators and tunable acoustoelectric devices in MMICs for reconfigurable front end approaching mm-wave frequencies.</p>