The spectral range of quaternary AlGaInN/AlGaN MQWs extends from UV to IR. Nitride-based green and blue LEDs reveal a high efficiency for the further application. Integrating LEDs of three element colors can perform white light. The optical properties of GaN MQWs are very sensitive to the growth conditions of MQWs. The ununiformity is not fabrication desired but needs to prevent, which is necessary to understand and to precisely control through its growth condition for manufacture the LED. In this work the sample has a luminescence varied from orange to purple across the whole wafer. In this work, the correlations between optical and structural properties in these samples have been studied by means of Transmission Electron Microscopy (TEM), energy dispersive X-ray spectrometry (EDS), and cathodoluminescence (CL) measurements.