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  • About
  • The Global ETD Search service is a free service for researchers to find electronic theses and dissertations. This service is provided by the Networked Digital Library of Theses and Dissertations.
    Our metadata is collected from universities around the world. If you manage a university/consortium/country archive and want to be added, details can be found on the NDLTD website.
1

Performance Assesment Of Indium Antimonide Photodetectors On Silicon Substrates

Tumkaya, Umid 01 January 2003 (has links) (PDF)
In this study, detailed characteristics and performance assessment of 3&amp / #8722 / 5 &micro / m p-i-n InSb photodetectors on Si substrates are reported. The detector epilayers were grown on GaAs coated Si substrates by molecular beam apitaxy (MBE). Both homojunction and single heterojunction (AlInSb/InSb) detector structures were investigated. Arrays of 33x33 &micro / m2 detectors were fabricated and flip-chip bonded to a test substrate for detailed electrical and optical characterization. A peak detectivity as high as 1x1010 cmHz1/2/W was achieved with InSb homojunction detectors on Si substrate in spite of the large lattice mismatch between InSb and Si (%19). In both homojunction and single heterojunction structures the differential resistance is significantly degraded by trap assisted tunneling (TAT) under moderately large reverse bias and by ohmic leakage near zero-bias. While the heterojunction structures provide a higher 80 K zero bias differential resistance, the responsivity of this structure is significantly lower than that of homojunction InSb photodiodes. In both homojunction and heterojunction photodetectors, 80K 1/f noise is dominated by TAT processes, and the noise current at 1 Hz follows the empirical relation in= &amp / #945 / TAT(ITAT) &amp / #946 / with &amp / #945 / TAT&amp / #8764 / 1.1x10&amp / #8211 / 6 and &amp / #946 / &amp / #8764 / 0.53.

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