The "n-like layer" is important in multilayer layer amorphous selenium (a-Se) based Xray detector structures because it blocks the injection of holes from the positive electrode. The dark current in these devices is controlled primarily by hole injection,and the introduction of the n-like layer to block hole injection was a key development in the commercialization of a-Se X-ray detectors. An n-like a-Se layer is defined as a layer in which the electron range is much greater than the hole range, ¦Ìe¦Óe >> ¦Ìh¦Óh, where ¦Ó and ¦Ì are the lifetime and drift mobility of the charge carriers and the subscript e and h represent electrons and holes.<p> This thesis examines the effect of doping a-Se with Group II elements (in particular Mg) towards finding a better n-like layer ¨C that with relatively long electron range (drift mobility ¡Á lifetime) , trap limited hole transport and which is stable against crystallization. Conventional Time of Flight (TOF) and Interrupted Field Time of Flight (IFTOF) transient photoconductivity measurements were used to characterize the electron and hole transport in various Group II doped a-Se layers. The dependence of the electron and hole lifetimes and drift mobilities on the composition of the n-like layer was examined. The addition of Group II materials converts the a-Se starting material from p-like into n-like. It was found that increasing the concentration of Mg increases the electron range while limiting the hole range by modifying the population of deep traps. The addition of As further limits the hole transport but does not alter the electron range. The clear reproducibility of the thermal properties obtained from the Differential Scanning Calorimetry (DSC) implies that small amounts of Mg can be used as a suitable n-type dopant.

Rapid progress over the last decade on thin film transistor (TFT) active matrix organic light emitting (AMOLED) displays led to the emergence of high-performance, low-power, low-cost flat panel displays. Despite the shortcomings of the active matrix that are associated with the instability and low mobility of TFTs, the amorphous silicon TFT technology still remains the primary solution for the AMOLED backplane. To take advantage of this technology, it is crucial to develop driving schemes and circuit techniques to compensate for the limitations of the TFTs. The driving schemes proposed in this thesis address these challenges, in which, the sensitivity of the OLED current to the transistor variations is reduced significantly. This is achieved by comparing the data signal with a feedback signal associated with the pixel current by means of an external driving circuit through a column feedback line. Depending on the nature of the feedback signal, (i.e. current or voltage) several pixel circuits and external drivers are proposed. New AMOLED pixel circuits with voltage and current feedback are designed, simulated, fabricated, and tested. The performance of these circuits is analyzed in terms of their stability, settling time, power efficiency, noise, and temperature-dependence. For the pixel circuits with current feedback, an operational transresistance amplifier is designed and implemented in a high-voltage CMOS process. Measurement results for both voltage and current feedback driving schemes indicate less than a 2%/V sensitivity to shifts in the threshold voltage of the TFTs. By using current feedback and an accelerating pulse, programming times less than 50 s are achieved.

Rapid progress over the last decade on thin film transistor (TFT) active matrix organic light emitting (AMOLED) displays led to the emergence of high-performance, low-power, low-cost flat panel displays. Despite the shortcomings of the active matrix that are associated with the instability and low mobility of TFTs, the amorphous silicon TFT technology still remains the primary solution for the AMOLED backplane. To take advantage of this technology, it is crucial to develop driving schemes and circuit techniques to compensate for the limitations of the TFTs. The driving schemes proposed in this thesis address these challenges, in which, the sensitivity of the OLED current to the transistor variations is reduced significantly. This is achieved by comparing the data signal with a feedback signal associated with the pixel current by means of an external driving circuit through a column feedback line. Depending on the nature of the feedback signal, (i.e. current or voltage) several pixel circuits and external drivers are proposed. New AMOLED pixel circuits with voltage and current feedback are designed, simulated, fabricated, and tested. The performance of these circuits is analyzed in terms of their stability, settling time, power efficiency, noise, and temperature-dependence. For the pixel circuits with current feedback, an operational transresistance amplifier is designed and implemented in a high-voltage CMOS process. Measurement results for both voltage and current feedback driving schemes indicate less than a 2%/V sensitivity to shifts in the threshold voltage of the TFTs. By using current feedback and an accelerating pulse, programming times less than 50 s are achieved.

The dichroism in amorphous As2Se3 induced by a polarized beam of near band-gap light (λ = 632.8 nm) was measured in films that ranged in thickness from 0.25 µm to 1.93 µm. Most noncrystalline materials are initially isotropic and homogeneous. When amorphous As2Se3 (a chalcogenide glass) absorbs an intense pump-beam of polarized light, the absorption coefficient for light polarized in the same direction as the pump-beam is less than for the perpendicular polarization, i.e. the sample becomes anisotropic (dichroic). The induced dichroism is reversible by rotating the polarization of the pump light by 90°. Induced dichroism is potentially useful in various photonic devices including optical switches, optical memory, and photowritable polarizers.<p>Several aspects of photoinduced anisotropy in a-As2Se3 have been analyzed:<p>(i) rate of photoinduced anisotropy buildup as a function of inducing beam intensity and sample thickness, <p>(ii) the kinetics of the photoinduced anisotropy buildup in terms of a stretched exponential curve, <p>(iii) the stretched exponent, β, as a function of inducing beam intensity and sample thickness, <p>(iv) reversibility of the photoinduced anisotropy, (v) saturation level of photoinduced anisotropy as a function of inducing beam intensity and sample thickness.<p>The anisotropy buildup kinetics has been found to follow a stretched exponential behavior and that there exists an inverse relationship between the pump intensity and the time constant, τ. The τ(I) vs intensity (I) relationship more closely follows a logistic dose response curve than a simple straight line or power law relationship. There exists a direct relationship between the time contact  and the sample thickness, where a longer anisotropy buildup time is required as the sample thickness increases. The stretched exponent, β, was found to be approximately 0.6 and has a slight dependence on the inducing light intensity. The correlation of the stretching exponent, β, to sample thickness, L, was found to have a weak inverse relationship, that is β tends to decrease as the sample thickness increases.<p>The findings in this work demonstrate that the anisotropy orientation could be changed indefinitely since it was found that even after 100 orientation changes the anisotropy saturation had no measurable fatiguing. The anisotropy saturation level was found to be independent of the inducing beam intensity and linearly proportional to the sample thickness.

The electronic properties of amorphous materials are greatly affected by the density of localized states in the mobility gap of these materials. The exact shape of the density of states (DOS) distribution in amorphous selenium (a-Se) is still unresolved despite decades of research. One of the most commonly employed methods to investigate charge transport properties in high resistivity materials is time-of-flight (TOF) transient photoconductivity experiment. The TOF transient photoconductivity technique is used to measure the induced photocurrent in the external circuit when the sample is photoexcited. Information pertaining to carrier mobility and other carrier parameters are deduced from the shape of the photocurrent. The investigation of the charge transport phenomenon is well known to be a complicated task. Monte Carlo (MC) simulation method has become a standard method for carrier transport studies in amorphous materials. The purpose of this research work is to develop a Monte Carlo simulation model for charge transport in typical TOF transient photoconductivity experiment to investigate the DOS distribution in a-Se. The MC simulations were first performed for relatively simpler models for which theoretical and analytical solutions were available. The MC model developed here is based on simulating the drift of carriers resulting from photogeneration, subject to the influence of an applied electric field and multiple trapping events. The free drift time of photocarriers and their dwell time in the traps are stochastic in nature, in accordance with the probabilities of these events. Electron time-of-flight transient photocurrents were calculated in amorphous selenium as a function of the electric field. The distribution of localized states (DOS) in a-Se has been investigated by comparing the experimentally measured and calculated transient photocurrents. The analysis of multiple-trapping transport has been done by the discretization of a continuous DOS. The DOS distribution has been optimized to produce the best agreement between the calculated and measured transient photocurrents. The resulting DOS has distinct features: A first peak at ~0.30 eV below Ec with an amplitude ~1017 eV1 cm3, a second small peak (or shoulder) at 0.450.50 eV below Ec with an amplitude 10141015 eV1 cm3, and deep states with an integral concentration 10111014 cm3 lying below 0.65 eV, whose exact distribution could not be resolved because of the limitations of the available experimental data. The density of states (DOS) distribution in the vicinity of the valence band mobility edge in vacuum coated a-Se films has been investigated by calculating the MC hole transient photocurrents at different temperatures, and also the dependence of the drift mobility on the temperature and field. The calculated TOF transient photocurrents were compared with experimental data published elsewhere. It is shown that, analogous to electron transport in a-Si:H, the DOS near Ev is a featureless, monotonically decreasing distribution in energy up to Ev + 0.4 eV, without the 0.28 eV peak near the valence band which was thought to control the hole drift mobility. Such a DOS was able to account for hole TOF data reported previously by several authors to date.

The "n-like layer" is important in multilayer layer amorphous selenium (a-Se) based Xray detector structures because it blocks the injection of holes from the positive electrode. The dark current in these devices is controlled primarily by hole injection,and the introduction of the n-like layer to block hole injection was a key development in the commercialization of a-Se X-ray detectors. An n-like a-Se layer is defined as a layer in which the electron range is much greater than the hole range, ¦Ìe¦Óe >> ¦Ìh¦Óh, where ¦Ó and ¦Ì are the lifetime and drift mobility of the charge carriers and the subscript e and h represent electrons and holes.<p> This thesis examines the effect of doping a-Se with Group II elements (in particular Mg) towards finding a better n-like layer ¨C that with relatively long electron range (drift mobility ¡Á lifetime) , trap limited hole transport and which is stable against crystallization. Conventional Time of Flight (TOF) and Interrupted Field Time of Flight (IFTOF) transient photoconductivity measurements were used to characterize the electron and hole transport in various Group II doped a-Se layers. The dependence of the electron and hole lifetimes and drift mobilities on the composition of the n-like layer was examined. The addition of Group II materials converts the a-Se starting material from p-like into n-like. It was found that increasing the concentration of Mg increases the electron range while limiting the hole range by modifying the population of deep traps. The addition of As further limits the hole transport but does not alter the electron range. The clear reproducibility of the thermal properties obtained from the Differential Scanning Calorimetry (DSC) implies that small amounts of Mg can be used as a suitable n-type dopant.

An overview of synchrotrons and synchrotron radiation is presented, along with the theory and practical considerations behind several types of X-ray spectroscopy. The theory and practical considerations of density functional theory are also given, with direct reference to some specific software packages.<p> Some synchrotron-excited X-ray spectroscopy measurements and density functional theory calculations of selenium and arsenic-doped selenium films are then outlined. The physical structure of crystalline and amorphous selenium and the electronic structure of amorphous selenium are discussed and comparison is made to the experimental results.<p> A weak feature in the conduction band is identified as a "fingerprint" of the degree of crystallization in amorphous selenium from X-ray absorption measurements. Similarly, a weak feature corresponding to lone-pairs in the valence band is identified as a "fingerprint" of the arsenic concentration from X-ray emission measurements.<p> Finally a detailed model of the structure of amorphous selenium is explained, and compared to experiment. This model is tested both by direct calculations and by a reverse Monte Carlo approach. The implications of this model with respect to the structure of amorphous and arsenic-doped amorphous selenium are discussed. Calculations suggest that simply randomizing the arrangement of "perfect" trigonal selenium is unable to reproduce the measurements of amorphous selenium; a moderate variation in the bond angle of "perfect" trigonal selenium is also necessary.

Glassy polymers are extensively used to make all kinds of structural components. Polymers, such as epoxies, are often chosen as matrices in polymer matrix composites (PMC). Ever since the 1960s, these types of composites have been gaining importance in aerospace and automotive advanced applications due to their high sti ness and weight saving potential. In order to provide clues on the dependence of the fracture behavior upon the stress triaxiality, a series of tensile tests on epoxy (Epon862) round notched bars were carried out at NASA Glenn Research Center. Using state-of-the-art non-contact dig- ital image correlation measurement technique, the mechanical quantities of interest were extracted in order to understand how the fracture behavior responds when sub- jected to various levels of stress triaxiality induced by varying the notch radius of the specimens. E ects of aging on the fracture behavior were also investigated. A physics-based macromolecular constitutive model that accounts for temperature and pressure sensitivity as well as small-strain softening and large-strain hardening was used to model the deformation behavior. Good correlation between experiments and numerical simulations was achieved. To predict fracture, a pressure-sensitive model motivated by previous work is introduced. Based on the experimental and numerical results, the relation between the mean strain to failure versus the stress triaxiality was de ned and it was shown that the fracture response of the material is strongly a ected by the level of stress triaxiality.

The traditional displayer ¡V CRT has already been substituted by liquid crystal displayer (LCD).The a-Si TFT is used to be a switch, while the size of the displayer increases, the require of the performance and quality of TFTs is more and more better. Therefore, it is very important subject to study the stability and to improve the performance of a-Si TFTs. In this thesis, we fabricate another new structure (asymmetry dual-gate TFTs).For asymmetry dual-gate TFTs, the ITO back gate is extended to the middle of the channel and only covered on the drain contact. The new structure has the advantages of dual-gate TFTs. With dual-channel conduction, it exhibit higher Ion and lower photo leakage current performance than the conventional inverted staggered TFTs. In addition, we use the asymmetry dual-gate structure to investigate how the parasitic capacitance influences the feed-through voltage by C-V measurement. We also to investigate the influences of electrical characteristics with the ITO back gate whether or not overlap the source contact. The asymmetry in on current with source-drain swapping can be attributed to the difference in the ITO back gate whether overlaps the source contact. Finally, it simulated the process of the degradation on the TFTs to find the stability mechanism of the TFTs.

In this study, Mg-Cu thin film metallic thin films were fabricated via two ways, the co-deposition and post-annealing of the multilayered thin films. Amorphous Mg1-xCux, where x is from 38 to 82, thin films with nanocrystalline particles are able to be fabricated via co-sputtering. The mechanism of formation is different from the rapid quenching process. For the Mg-Cu co-sputtering system, the mechanical properties of the Mg-Cu co-sputtered films were tested via MTS nanoindenter. Mg23.5Cu76.5 exhibits a higher Young¡¦s modulus than Mg17.7Cu82.3 and Mg40.4Cu59.6 due to the partial amorphous structure. Moreover, the pop-in effects with a smaller size occurs of the Mg23.5Cu76.5 sample in a higher frequency than of the Mg17.7Cu82.3 and Mg40.4Cu59.6 samples. The small pop-in effects in the Mg23.5Cu76.5 sample approximate match the width of amorphous matrix via the HRTEM observation. Another process to form the amorphous thin film is via the post isothermal annealing process of the multilayered thin films. However, for the specimens of 20T32 consisting of 150-nm Mg and 50-nm Cu individual layers, the Mg individual layers would react to the Cu individual layers during the annealing at a temperature of 413 K owning to the slight negative heat of mixing. Due to the localized diffusion near the interfaces, Mg2Cu gradually form during the isothermal annealing since Mg2Cu is the most stable phase below 548 K [62]. Localized interdiffusion near the interfaces between Mg and Cu individual layers induced the formation of Mg2Cu rapidly. For the 40T32 specimens consisting of 15 nm Mg and 5 nm Cu individual layers, Mg2Cu rapidly form at 413 K due to the high interface energy. Then, the similar result exhibits in the 20T14 and 40T14 specimens annealed at 363 K.