this work, we have used the diamond-like carbon (DLC) also known as hydrogenated amorphous carbon (a-C:H), silicon doped DLC (a-C:H:Si) thin films deposited by the plasma enhanced chemical vapour deposition (PECVD) process on silicon substrate and studied their structural, electrical and electronic properties. The DLCs films were prepared at different applied bias voltage (Vb) starting from 100V to 600V; whereas the silicon is doped with DLC thin films using tetramethysilane (TMS) as a precursor at different standard centimetre cube per minute (sccm). In addition nitrogen doped amorphous carbon (a-C:Nx) thin films prepared by pulsed laser deposition (PLD) process and studied their different properties. Different nitrogen concentration (at.%) of a-C:Nx thin films were deposited on silicon substrate using nitrogen-gas as a precursor. The thicknesses of all thin films were ~15015 nm controlled and monitored during deposition process. Raman spectroscopy of these thin films was measured by using two different laser excitation wavelengths viz 488 nm and 647 nm respectively. The microstructure and electronic properties of these samples were investigated by Raman spectroscopy and the electrical property was studied by current-voltage (I-V) characteristics. Finally, a correlation among the electrical properties, electronic properties and micro-structure properties were established based on their sp3 and sp2 concentration in the thin film structure.