Made available in DSpace on 2014-10-09T12:24:39Z (GMT). No. of bitstreams: 0 / Made available in DSpace on 2014-10-09T14:05:26Z (GMT). No. of bitstreams: 1 00915.pdf: 5956709 bytes, checksum: 8186c1c06a5525c980f332d140359a22 (MD5) / Tese (Doutoramento) / IEA/T / Instituto de Fisica, Universidade de Sao Paulo - IF/USP

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Theoretical formulations of secondary electron emission over the past 20 years have exceeded the confirming ability of available measurements. An instrument has been developed and tested for the purpose of obtaining simultaneous angle- and energy-resolved (AER) secondary and backscattered electron measurements for energetic electrons incident on conducting surfaces. The instrument is found to be in good working order and the data quality found to be excellent for nearly all angles and energies investigated. A representative set of AER measurements has been acquired for 1500 e V electrons normally incident on polycrystalline gold. The data have been used to construct angle-resolved (AR) spectra and energy-resolved (ER) angular distributions, which have been examined both as surface plots and cross sections. Analysis of the measurements strongly suggests that secondary electrons comprise the bulk of emitted electrons at energies much greater than the traditionally accepted maximum secondary electron energy of 50 eV. Additional evidence suggests the ability to investigate dominant secondary and backscattered electron production mechanisms in several energy domains.

<p> The properties of the levels of 21Ne and 29Si have been studied via γ-ray angular distribution and linear polarization measurements and γ-γ coincidence studies yielding a number of new spin-parity assignments to the states of both nuclei. Comparison of the results with the Nilsson model for odd nuclei indicate that for 21Ne, good agreement is in general obtained. Nevertheless, a number of interesting discrepancies exist with regard to the negative parity states of 21Ne and explanations have been proposed for some of these. The agreement is also quite good for 29Si with a calculation using a minimum of free parameters, confirming the oblate shape for this nucleus.</p> / Thesis / Doctor of Philosophy (PhD)

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Angular distributions and total yields of atoms sputtered from bismuth targets by normally incident 10 keV -50 keV Ne+ and Ar+ ions have been measured both experimentally and by computer simulation. Polycrystalline Bi targets were used for experimental measurements. The sputtered atoms were collected on high purity aluminum foils under ultra-high vacuum conditions, and were subsequently analyzed using Rutherford backscattering spectroscopy. The Monte-Carlo based SRIM code was employed to simulate angular distributions of sputtered Bi atoms and total sputtering yields of Bi to compare with experiment. The measured sputtering yields were found to increase with increasing projectile energy for normally incident 10 keV - 50 keV Ne+ and Ar+ ions. The shapes of the angular distributions of sputtered Bi atoms demonstrated good agreement between experiment and simulation in the present study. The measured and simulated angular distributions of sputtered Bi exhibited an over-cosine tendency. The measured value of the degree of this over-cosine nature was observed to increase with increasing incident Ne+ ion energy, but was not strongly dependent on incident Ar+ ion energy. The differential angular sputtering yield and partial sputtering yields due to Ar ion bombardment of an inhomogeneous liquid Bi:Ga alloy have been investigated, both experimentally and by computer simulation. Normally incident 25 keV and 50 keV beams of Ar+ were used to sputter a target of 99.8 at% Ga and 0.2 at% Bi held at 40° C in ultra-high vacuum (UHV), under which conditions the alloy is known to exhibit extreme Gibbsian surface segregation that produces essentially a monolayer of Bi atop the bulk liquid. Angular distributions of sputtered neutrals and partial sputtering yields obtained from the conversion of areal densities of Bi and Ga atoms on collector foils were determined. The Monte-Carlo based SRIM code was employed to simulate the experiment and obtain the angular distribution of sputtered components. The angular distribution of sputtered Ga atoms, originating from underneath the surface monolayer, was measured to be sharply peaked in angle about the surface normal direction compared to the Bi atoms originating from surface monolayer. The simulation study produced contradicting results, where the species originating from surface monolayer was strongly peaked around the surface normal compared to the species originating from beneath the surface monolayer.

The Standard Model predicts existence of one Higgs boson with combined parity CP = +1. In MSSM there exist Higgs boson with CP = −1 in addition. The work develops one method of Higgs boson CP determination on the basis of angular correlations of pions and ρ-mesons born in cascade decay H/A → τ− τ+ → ρ− /π− ντ ρ+ /π+ ¯ντ . The calculations are done in the leading order of perturbation theory. Further, the possibility of signal (Higgs boson decay) and background (Z boson decay) differentiation is studied. The processes in question are simulated using Monte Carlo generators Pythia and Tauola. Simulation outputs are compared with calculated theoretical results. 1

An angular analysis of the rare decay B0 → K∗ (K+ π− )µ+ µ− is presented. The study is based on a data sample from pp collisions at centre-of-mass energy of 8 TeV recorded by the ATLAS detector at the Large Hadron Collider which corresponds to an integrated luminosity of 20.3 fb−1 . An extended unbinned maximum-likelihood fit of the decay angular distribution is used to measure the CP-averaged angular observables FL, S3, S4, S5, S7 and S8 and the cor- responding form-factor independent observables P1, P4, P5, P6 and P8. The measurements are performed in the region 0.04 GeV2 < q2 < 6 GeV2 , where q is the dimuon invariant mass. The results are in agreement with the Standard Model predictions and com- patible with measurements published by other experiments. The most signifi- cant deviations are observed for parameters P4, P5 at the level of 2.7 standard deviations and for P8 which is 1.9 standard deviations away from one of the predictions. The P5 deviation in bin 4 GeV2 < q2 < 6 GeV2 is consistent with the one reported by the LHCb collaboration. The second part of this work shortly summarises the operation of the ATLAS Semiconductor Tracker, testing of the prototype module for the Inner Tracker strip upgrade, and the monitoring of non-collision background which was devel- oped as a part of this thesis.