published_or_final_version / abstract / Physics / Doctoral / Doctor of Philosophy

by Lui Kai Man, Raymond. / Thesis (M.Phil.)--Chinese University of Hong Kong, 1993. / Includes bibliographical references (leaves 221-225). / Acknow1edgements / Abstract --- p.i / Table of Contents --- p.ii / Chapter Chapter 1 --- Introduction --- p.1 / Chapter Chapter 2 --- Sample Preparation --- p.12 / Chapter A. --- Introduction --- p.12 / Chapter B. --- The Working Systems --- p.12 / Chapter C. --- Sample Preparation --- p.14 / Chapter C.1 --- The Method Of Reactive Evaporation --- p.14 / Chapter C.2 --- The Method Of Posthydrogenation --- p.15 / Chapter D. --- The Substrates --- p.16 / Chapter Chapter 3 --- "Electrical Conductivities, Thermal and Optical Stability Experiments" --- p.21 / Chapter A. --- Introduction --- p.21 / Chapter B. --- Theory --- p.22 / Chapter B.1 --- Electronic Transport In Amorphous Semiconductor --- p.22 / Chapter B.2 --- dc Electrical Conductivity in Davis-Mott Model --- p.23 / Chapter B.3 --- Photoconductivity --- p.27 / Chapter B.4 --- Staebler-Wronski Effect --- p.28 / Chapter C. --- Experimental Method --- p.29 / Chapter C.1 --- Dark And Photo Conductivities Measurements --- p.29 / Chapter C.2 --- Optical Stability Measurement --- p.32 / Chapter C.3 --- Thermal Stability Measurement --- p.32 / Chapter D. --- Results --- p.34 / Chapter D.1 --- Reactively Evaporated Samples --- p.34 / Chapter D.2 --- Temperature Dependence Of Conductivities --- p.34 / Chapter D.3 --- Optical Stability Measurement --- p.35 / Chapter D.4 --- Thermal Stability Measurement --- p.36 / Chapter E. --- Discussions --- p.36 / Chapter E.1 --- Electrical Properties Of Reactively Evaporated a-Si:H --- p.36 / Chapter E.2 --- A Comparative Study Between Reactive Evaporated Samples With Those From Other Reactive Deposition Techniques And Glow-Discharge Process --- p.37 / Chapter F. --- Conclusions --- p.38 / Chapter Chapter 4 --- Infrared Absorption Experiment --- p.63 / Chapter A. --- Introduction --- p.63 / Chapter A.1 --- General Description --- p.63 / Chapter A.2 --- Types Of Atomic Vibrations --- p.64 / Chapter A.3 --- Infrared Spectroscopy Of a-Si:H --- p.64 / Chapter A.4 --- Effect Of Substrate Temperature On Bonding Configuration --- p.65 / Chapter B. --- Experimental Method --- p.66 / Chapter C. --- Results --- p.66 / Chapter D. --- Discussions --- p.67 / Chapter D.1 --- Identification Of The Two Absorption Bands --- p.67 / Chapter D.2 --- Effect Of Substrate Temperature --- p.68 / Chapter E. --- Conclusions --- p.70 / Chapter Chapter 5 --- Electron Spin Resonance Experiment --- p.82 / Chapter A. --- Introduction --- p.82 / Chapter B. --- Theory --- p.85 / Chapter B. 1 --- The Absorption Process --- p.85 / Chapter B. 2 --- The Relaxation Process --- p.86 / Chapter C. --- Experimental Method --- p.90 / Chapter D. --- Results --- p.92 / Chapter E. --- Discussions --- p.93 / Chapter F. --- Conclusions --- p.96 / Chapter Chapter 6 --- Optical Absorption Experiment --- p.114 / Chapter A. --- Introduction --- p.114 / Chapter B. --- Theory On Optical Transitions Within Amorphous Materials --- p.114 / Chapter B.1 --- General Descriptions --- p.114 / Chapter B.2 --- Band Models For Optical Absorptions In An Amorphous Semiconductor --- p.116 / Chapter C. --- Experimental Method --- p.121 / Chapter E. --- Analysis --- p.123 / Chapter E.1 --- Band Model --- p.123 / Chapter E.2 --- Deconvolution Of Absorption Spectrum --- p.124 / Chapter F. --- Discussions --- p.131 / Chapter G. --- Conclusions --- p.133 / Appendix A --- p.134 / Chapter A.1 --- An Outline On The Theoretical And Experimental Aspects Of PDS --- p.134 / Chapter Chapter 7 --- Recrystallization Of Amorphous Germanium By Rapid Thermal Annealing --- p.165 / Chapter A. --- Introduction --- p.165 / Chapter B. --- Theory --- p.166 / Chapter B.1 --- Recrystallization Of Amorphous Germanium --- p.166 / Chapter B.2 --- Nucleation And Growth - Isothermal Transformation --- p.167 / Chapter B.3 --- The Structure Of Polycrystalline Aggregates By X-ray Analysis --- p.170 / Chapter C. --- Experimental Set-ups --- p.172 / Chapter C. 1 --- The Rapid Thermal Processing Unit --- p.172 / Chapter C. 2 --- The Conventional Furnace --- p.175 / Chapter C. 3 --- The X-ray Diffractometer --- p.175 / Chapter C. 4 --- Electrical Conductivity Measurements --- p.176 / Chapter D. --- Experimental Method --- p.177 / Chapter D.1 --- The Samples --- p.177 / Chapter D.2 --- The Experiments --- p.177 / Chapter E. --- Results And Discussions --- p.178 / Chapter F. --- Conclusions --- p.185 / Appendix A --- p.216 / Chapter Chapter 8 --- Conclusions --- p.217 / Chapter A. --- Conclusions --- p.217 / Chapter B. --- Suggestions On Improvement And Further Development Of The Present Systems --- p.219 / References --- p.221

Lee Wai Tak Joseph = Fe₃₋xZnxO₄的真空熱處理效應及磁隧道結 / 李懷德. / On t.p. "-x" and "x" is subscript. / Thesis (M.Phil.)--Chinese University of Hong Kong, 2006. / Includes bibliographical references. / Text in English; abstracts in English and Chinese. / Lee Wai Tak Joseph = Fe₃₋xZnxO₄ de zhen kong re chu li xiao ying ji ci sui dao jie / Li Huaide. / Acknowledgement --- p.i / Abstract --- p.ii / 論文摘要 --- p.iii / Table of contents --- p.iv / List of Figures --- p.ix / List of Tables --- p.xiv / Table of Contents / Chapter Chapter 1 --- Introduction / Chapter 1.1 --- Introduction to Magnetite Fe3O4 and Zinc Ferrite Fe3.-xZnxO4 --- p.1-1 / Chapter 1.1.1 --- Crystal structure and Properties of Fe304 and Fe3-xZnxo4 --- p.1-1 / Chapter 1.1.2 --- Transformation of Iron Oxides --- p.1-6 / Chapter 1.2 --- Verwey transition --- p.1-10 / Chapter 1.2.1 --- Introduction --- p.1-10 / Chapter 1.2.2 --- Charge-orbital ordering --- p.1-15 / Chapter 1.3 --- Trilayer Magnetic Tunneling Junction (MTJ) --- p.1-18 / Chapter 1.3.1 --- Half-metallic Fe3O4 --- p.1-18 / Chapter 1.3.2 --- Tunneling Magnetoresistance (TMR) --- p.1-19 / Chapter 1.4 --- Research Motivation --- p.1-20 / Chapter 1.5 --- Scope of this thesis --- p.1-21 / References --- p.1-22 / Chapter Chapter 2 --- Instrumentation / Chapter 2.1 --- Sample Preparation --- p.2-1 / Chapter 2.1.1 --- Vacuum System --- p.2-1 / Chapter 2.1.2 --- Facing-target Sputtering (FTS) Technique --- p.2-3 / Chapter 2.2 --- Sample Treatment --- p.2-7 / Chapter 2.2.1 --- Vacuum Annealing (VA) --- p.2-7 / Chapter 2.2.2 --- Silver Electrode Coating System --- p.2-9 / Chapter 2.3 --- Sample Characterization --- p.2-11 / Chapter 2.3.1 --- Four-point-probe DC Resistivity Measurement --- p.2-11 / Chapter 2.3.2 --- Current-Voltage Measurement (IV) --- p.2-11 / Chapter 2.3.3. --- X-ray Diffraction (XRD) --- p.2-13 / Chapter 2.3.4 --- X-ray Fluorescence (XRF) Method --- p.2-14 / Chapter 2.3.5 --- Alpha-step Surface Profiler --- p.2-14 / Chapter 2.3.6 --- Atomic Force Microscope (AFM) --- p.2-15 / References --- p.2-16 / Chapter Chapter 3 --- Fabrication of Fe3- xZnxO4Thin Films / Chapter 3.1 --- Thin Film Deposition --- p.3-1 / Chapter 3.1.1 --- Review of Deposition Procedures --- p.3-1 / Chapter 3.1.2 --- Preparation of Substrates --- p.3-6 / Chapter 3.1.3 --- Deposition of Fe3-xZnxO4 thin films --- p.3-7 / Chapter 3.2 --- Characterization of Fe3-xZnxO4 thin films --- p.3-9 / Chapter 3.2.1 --- Surface Morphology --- p.3-9 / Chapter 3.2.2 --- Temperature-Dependent Resistivity Measurement --- p.3-11 / Chapter 3.3 --- Factors affecting the Quality of films --- p.3-18 / Chapter 3.3.1 --- Effect of Substrates --- p.3-18 / Chapter 3.3.2 --- Effects of Sputtering Power --- p.3-21 / Chapter 3.3.3 --- Effects of Temperature --- p.3-24 / Chapter 3.3.4 --- Effects of Thickness --- p.3-29 / Chapter 3.4 --- Chapter summary --- p.3-32 / References --- p.3-33 / Chapter Chapter 4 --- Vacuum Annealing of Fe3-xZnxO4 Thin Films / Chapter 4.1 --- Introduction --- p.4-1 / Chapter 4.2 --- Post-Annealing Effect in the Presence of Oxygen --- p.4-6 / Chapter 4.3 --- Vacuum Annealing of Fe3-xZnx04 thin films --- p.4-12 / Chapter 4.3.1 --- First Stage of Vacuum Annealing --- p.4-12 / Chapter 4.3.2 --- Second Stage of Vacuum Annealing --- p.4-17 / Chapter 4.3.3 --- Third Stage of Vacuum Annealing --- p.4-25 / Chapter 4.4 --- Chapter summary --- p.4-32 / References --- p.4-33 / Chapter Chapter 5 --- Trilayer Magnetic Tunneling Junction (MTJ) / Chapter 5.1 --- Introduction --- p.5-1 / Chapter 5.2 --- Fabrication of Trilayer Magnetic Tunneling Junction --- p.5-3 / Chapter 5.3 --- Tunneling Magnetoresistance (TMR) --- p.5-5 / Chapter 5.3.1 --- Current-Voltage Characteristic Curve (IV curve) --- p.5-5 / Chapter 5.3.2 --- Magnetoresistance Measurement --- p.5-8 / References --- p.5-10 / Chapter Chapter 6 --- Conclusions / Chapter 6.1 --- Conclusions --- p.6-1 / Chapter 6.2 --- Further research --- p.6-2 / References --- p.6-3

published_or_final_version / Mechanical Engineering / Master / Master of Philosophy

No description available.

Thesis (PhD.(Metallurgy)--University of Pretoria, 2007. / Includes bibliographical references.

Thesis (M.S.)--West Virginia University, 2008. / Title from document title page. Document formatted into pages; contains xiv, 93 p. : ill. (some col.). Includes abstract. Includes bibliographical references (p. 85-88). WVU users: Also available in print for a fee.

No description available.

by Li Chi Pui. / Thesis (M.Phil.)--Chinese University of Hong Kong, 1999. / Includes bibliographical references (leaves [105]-[109]). / Abstracts in English and Chinese. / Abstract / Acknowledgement --- p.Page no / Chapter Chapter 1. --- Introduction / Chapter 1.1 --- Metal silicides --- p.1 / Chapter 1.2 --- Cobalt silicides --- p.3 / Chapter 1.3 --- Ion beam synthesis of metal silicides by metal implantation into silicon --- p.4 / Chapter 1.4 --- Feature of MEVVA implantation --- p.5 / Chapter 1.5 --- Motivation and organisation of this thesis --- p.6 / Chapter Chapter 2. --- Sample Preparation and Characterisation Methods / Chapter 2.1 --- MEVVA implantation --- p.7 / Chapter 2.2 --- Simulation by TRIM --- p.9 / Chapter 2.3 --- Sample preparation --- p.12 / Chapter 2.4 --- Sheet resistivity measurements --- p.14 / Chapter 2.5 --- Rutherford backscattering spectroscopy (RBS) --- p.17 / Chapter 2.6 --- Transmission electron microscopy (TEM) --- p.19 / Chapter 2.6.1 --- Transmission electron microscopy (TEM) sample preparation --- p.21 / Chapter 2.7 --- Atom force microscopy (AFM) and conducting AFM --- p.31 / Chapter Chapter 3. --- Characterisation of As-implanted Samples / Chapter 3.1 --- Experimental details / Chapter 3.1.1 --- Sheet resistance measurements --- p.33 / Chapter 3.1.2 --- Rutherford backscattering spectroscopy (RES) --- p.36 / Chapter 3.1.3 --- Sputtering depth measurements --- p.43 / Chapter 3.1.4 --- Transmission electron microscopy (TEM) --- p.44 / Chapter 3.1.5 --- Spreading resistance profiling (SRP) --- p.61 / Chapter 3.1.6 --- Atom force microscopy (AFM) and conducting AFM --- p.64 / Chapter 3.2 --- Results and discussion --- p.71 / Chapter 3.3 --- Summary --- p.81 / Chapter Chapter 4. --- Characterisation of Annealed Samples / Chapter 4.1 --- Experimental details / Chapter 4.1.1 --- Rutherford backscattering spectroscopy (RBS) --- p.82 / Chapter 4.1.2 --- Transmission electron microscopy (TEM) --- p.87 / Chapter 4.1.3 --- Sheet resistance measurements --- p.98 / Chapter 4.2 --- Summary --- p.101 / Chapter Chapter 5. --- Conclusion --- p.102 / Appendix / Reference

by Wong Kin Sang. / Thesis (M.Phil.)--Chinese University of Hong Kong, 1998. / Includes bibliographical references (leaves 61-62). / Text in English; abstract also in Chinese. / by Wong Kin Sang. / Table of contents --- p.I / Chapter Chapter 1 --- Introduction / Chapter 1.1 --- Interest in ZnxCd1-x Se/InP --- p.1 / Chapter 1.2 --- Conditions of thermal annealing --- p.2 / Chapter 1.3 --- Advantages of using photoluminescence (PL) --- p.3 / Chapter 1.4 --- Our work --- p.4 / Chapter Chapter 2 --- Experimental setup and procedures / Chapter 2.1 --- PL measurements --- p.6 / Chapter 2.1.1 --- Setup --- p.6 / Chapter 2.1.2 --- Types of PL measurements --- p.6 / Chapter 2.2 --- Annealing experiments --- p.8 / Chapter 2.2.1 --- Setup --- p.8 / Chapter 2.2.2 --- Types of annealing --- p.10 / Chapter 2.2.3 --- Procedures --- p.11 / Chapter Chapter 3 --- Results and discussions / Chapter 3.1 --- Room temperature PL studies of ZnxCd1-xSe/InP --- p.12 / Chapter 3.1.1 --- As-grown ZnxCd1-x Se/InP --- p.12 / Chapter 3.1.1.1 --- Peak energy vs concentration --- p.12 / Chapter 3.1.2 --- Annealing studies --- p.15 / Chapter 3.1.2.1 --- Isothermal annealing --- p.15 / Chapter 3.1.2.2 --- Isochronal annealing --- p.20 / Chapter 3.2 --- PL studies of ZnxCd1-xSe/InP at 10 K temperature --- p.22 / Chapter 3.2.1 --- As-grown ZnxCd1-xSe/InP --- p.22 / Chapter 3.2.1.1 --- Excitation power density dependence --- p.22 / Chapter 3.2.1.2 --- Peak energy vs Zn concentration --- p.26 / Chapter 3.2.2 --- Annealing studies --- p.29 / Chapter 3.2.2.1 --- Isothermal annealing --- p.29 / Chapter 3.2.2.2 --- Isochronal annealing --- p.33 / Chapter 3.3 --- Temperature dependent PL studies of ZnxCd1-xSe/InP --- p.37 / Chapter 3.3.1 --- As-grown ZnxCd1-xSe/InP --- p.37 / Chapter 3.3.1.1 --- Peak energy vs temperature --- p.37 / Chapter 3.3.1.2 --- Peak width vs temperature --- p.46 / Chapter 3.3.2 --- Annealing studies --- p.50 / Chapter 3.3.1.1 --- Peak energy vs temperature --- p.50 / Chapter 3.3.1.2 --- Peak width vs temperature --- p.55 / Chapter Chapter 4 --- Conclusions --- p.59 / References --- p.61