University, Diss., 2004--Bremen.

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No description available.

Thesis (Ph.D.)--York University, 2005. Graduate Programme in Mathematics and Statistics. / Typescript. Includes bibliographical references (leaves 114-123). Also available on the Internet. MODE OF ACCESS via web browser by entering the following URL: http://gateway.proquest.com/openurl?url_ver=Z39.88-2004&res_dat=xri:pqdiss&rft_val_fmt=info:ofi/fmt:kev:mtx:dissertation&rft_dat=xri:pqdiss:NR19804

A flash evaporation system is constructed in order to deposit thin films of Gallium Antimonide. The system includes a substrate heater-holder, a film thickness monitoring device and a powdered evaporant feeder. Thin films of GaSb, 2 to 4 microns thick are deposited on glass, sapphire and silicon substrates maintained at temperatures up to 365°C. The deposited films are observed to have many structural defects. The films exhibit semiconductor-like properties. Optical studies of the fundamental absorption edge at liquid-nitrogen temperature show that the films deposited on heated sapphire substrates have a polycrystalline structure and a band gap of 0.78 eV. The nature of the films is dependent on the type and temperature of the substrate. / Science, Faculty of / Physics and Astronomy, Department of / Graduate

The magnetophonon effect was used to investigate the uniaxial stress dependence of the effective mass in n-type InSb (indium antimonide).

The origin of the Shubnikov-de Haas effect, the strain theory developed by Bir and Pikus, and a simple, classical beating-effects model are discussed. The equipment and the experimental techniques used in recording the Shubnikov-de Haas oscillations of n-type indium antimonite are described. The analysis of the experimental data showed that the angular anisotropy of the period of SdH oscillations at zero stress was unmeasurable for low concentration samples as discussed by other workers. Thus the Fermi surfaces of InSb are nearly spherical at low concentration. It was also shown that the Fermi surface of a high concentration sample of InAs is also nearly spherical. The advantages of using the magnetic field modulation and phase sensitive detection techniques in determining the beats are given. The simple, classical beating-effects model is able to explain the experimental beating effect data in InSb. The computer programs used to obtain the theoretical values of the beat nodal position, SdH frequencies, average frequency, the Fermi surface contours, and the energy eigenvalues are given.

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