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The Global ETD Search service is a free service for researchers
to find electronic theses and dissertations. This service is
provided by the
Networked Digital Library of Theses and Dissertations.
Our metadata is collected from universities around the world. If you manage a university/consortium/country archive and want to be added, details can be found on the NDLTD website.
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Showing 61 to 70 of 90 (0.344 seconds)Spelling suggestions: "subject:"arsenides"" "subject:"arsenide's""
| 61 |
Investigation of electrorefraction associated with Wannier-Stark localisationBhatnagar, Anuj January 1999 (has links)
No description available.
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| 62 |
Optoelectronic mixing in heterojunction bipolar transistorsLiu, Chin Pang January 2000 (has links)
No description available.
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| 63 |
Impact ionisation in Alâ†xGaâ†1â†-â†xAs/GaAs heterojunction and multiple quantum well structuresChia, Ching Kean January 1998 (has links)
No description available.
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| 64 |
Avalanche multiplication and breakdown in wide bandgap semiconductorsGhin, Raymond January 1998 (has links)
No description available.
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| 65 |
Novel gallium and indium precursors for thin film depositionHorley, Graeme Anthony January 2000 (has links)
No description available.
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| 66 |
Electronic and vibrational excitations in adsorbed metalorganic moleculesMulcahy, Christopher Philip Arthur January 1998 (has links)
No description available.
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| 67 |
Lateral surface superlattices in strained InGaAs layersMilton, Brian E. January 2000 (has links)
No description available.
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| 68 |
Processing and magneto-transport studies of InAs/GaSb low dimensional structuresJaved Rehman, Yasin January 1999 (has links)
No description available.
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| 69 |
Resonant tunnelling spectroscopy of vertical GaAs/AlGaAs structuresHolder, Jonathan Paul January 1999 (has links)
No description available.
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| 70 |
Electronic structure of GaSb/GaAs and Si/Ge quantum dotsNorth, Stephen Michael January 2001 (has links)
There are significant differences between experiment and theoretical calculations of the electronic structure of GaSb/GaAs self-assembled quantum dots. Using a multi-band effective mass approximation it is shown that the influence of size and geometry of quantum dots has little or no effect in determining the hydrostatic strain. Furthermore, the valenceband ground state energies of the quantum dots studied are surprisingly consistent. This apparent paradox attributed to the influence of biaxial strain in shaping the heavy-hole and light-hole potentials. Consequently, it is shown that a simple, hydrostatically derived potential is insufficient to accurately describe the electronic structure of such quantum dots. In addition, using the latest experimental results measuring the conductionband offset, it has been shown that much better experimental contact may be achieved for the magnitude of the transition energies derived compared to theoretically derived transition energies. The transition energies of Si/Ge self-assembled quantum dots has also been calculated. In particular, a range of quantum dot structures have been proposed that are predicted to have an optical response in the 3-5 micron range.
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