No description available.

Massively parallel arrays of single walled carbon nanotubes (SWNT) have attracted significant research interests because of their ability to (i) average out inhomogeneities of individual SWNTs, (ii) provide larger on currents, and (iii) reduce noise to provide higher cutoff frequency for radio frequency applications. However, the array contains both metallic and semiconducting SWNTs and the presence of metallic nanotube in an aligned array negatively affects the device properties. Therefore, it is essential to selectively remove metallic nanotubes to obtain better transistor properties. It was recently found that although such a selective removal can be effective for a low density array, it does not work in a high density array and lead to a correlated breakdown of the entire array giving rise to a nanofissure pattern. In order to obtain a deeper understanding of such a correlated SWNT breakdown, we studied the breakdown power in the successive electrical breakdown of both low ( < 2 /um) and high density ( > 10 /um) SWNT arrays. We show that the breakdown voltage in successive electrical breakdown increases for low density array while it decreases for high density arrays. The estimated power required for the breakdown remains constant for low density arrays while it decreases for high density arrays in successive electrical breakdowns. We also show that, while a simple model of parallel resistor network can explain the breakdown of low density array, it cannot explain the behavior for the high density array implying that the correlation between the closely spaced parallel nanotubes plays a big role in the successive breakdowns of the high density SWNTs.

In the modern semiconductor world, there is a significant scaling of the transistor dimensions--The transistor gate length and the gate oxide thickness drop down to only several nanometers. Today the semiconductor industry is already dominated by submicron devices and other material devices for the high transistor density and performance enhancement. In this case, the semiconductor reliability issues are the most important thing for commercialization. The major reliability issues caused by voltage are hot carrier effects (HCs) and gate oxide breakdown (BD) effects. These issues are recently more important to industry, due to the small size and high lateral field in short-channel of the device will cause high electrical field and other reliability issues. This dissertation primarily focuses on the study of the CMOS device gate oxide breakdown effect on different kinds of circuits performance, also some HC effects on circuit's performance are studied. The physical mechanisms for BD have been presented. A practical and accurate equivalent breakdown circuit model for the CMOS device was studied to simulate the RF performance degradation on the circuit level. The BD location effect has been evaluated. Furthermore, a methodology was developed to predict the BD effects on the circuit's performances with different kinds of BD location. It also provides guidance for the reliability considerations of the digital, analog, and RF circuit design. The BD effects on digital circuits SRAM, analog circuits Sample&Hold, and RF building blocks with the nanoscale device--low noise amplifier, LC oscillator, mixer, and power amplifier, have been investigated systematically. Finally 90 nm device will be used to study the HC effect on the circuit's performance. The contributions of this dissertation include: Providing a thorough study of the gate oxide breakdown issues caused by the voltage stress on the device--from device level to circuit level; Studying real voltage stress case--high frequency (950 MHz) dynamic stress, and comparing with the traditional DC stress; A simple, practical, and analytical method is derived to study the gate oxide breakdown effect including breakdown location effect and soft / hard breakdown on the digital, analog and RF circuits performances. A brief introduction and simulation for 90 nm device HC effect provide some useful information and helpful data for the industry. The gate oxide breakdown effect is the most common device reliability issue. The successful results of this dissertation, from device level to circuit level, provide an insight on how the BD affects the circuit's performance, and also provide some useful data for the circuit designers in their future work.

Laser induced breakdown spectroscopy (LIBS) was tested to examine its applicability to remote and in suit analysis in inaccessible situation. Two types of liquid sample (slurry) prepared for simulating vitrification of liquid hazardous wastes was tested. In situ analysis ability makes the LIBS technique practical for analysis of the slurry samples during vitrification, which is in inaccessible situation. For the first slurry sample, two slurry circulation systems were devised to overcome major technical problems associated with LIBS measurements of slurry samples - namely sedimentation and change in the lens-to-sample distance (L.T.S.D) during measurement. The second slurry sample contained less water and is able to be managed in a small glass container during test. We applied direct analysis of slurry sample filled in glass container. Spectroscopic analysis was performed using two different detection systems: Czerny-Turner and Echelle spectrometer systems. In particular, spectroscopic analysis of data from an echelle spectrometer shows the high efficiency for simultaneously determining physical quantities of all elements of interest. We also evaluate LIBS technique to tin alloy samples for the purpose of quantitative analysis by using Echelle spectrometer system. Unknown samples without information of elemental composition were tested to estimate several sample compositions simultaneously. An artificial neural network, calibration method, and chemical analysis were applied to estimate the elemental concentrations of impurities in tin (Sn) alloy.

No description available.

No description available.

In the field of linear regression analysis, a single outlier can dramatically influence ordinary least squares estimation while low-breakdown procedures such as M regression and bounded influence regression may be unable to combat a small percentage of outliers. A high-breakdown procedure such as least trimmed squares (LTS) regression can accommodate up to 50% of the data (in the limit) being outlying with respect to the general trend. Two available one-step improvement procedures based on LTS are Mallows 1-step (M1S) regression and Schweppe 1-step (S1S) regression (the current state-of-the-art method). Issues with these methods include (1) computational approximations and sub-sampling variability, (2) dramatic coefficient sensitivity with respect to very slight differences in initial values, (3) internal instability when determining the general trend and (4) performance in low-breakdown scenarios. A new high-breakdown regression procedure is introduced that addresses these issues, plus offers an insightful summary regarding the presence and structure of multivariate outliers. This proposed method blends a cluster analysis phase with a controlled bounded influence regression phase, thereby referred to as cluster-based bounded influence regression, or CBI. Representing the data space via a special set of anchor points, a collection of point-addition OLS regression estimators forms the basis of a metric used in defining the similarity between any two observations. Cluster analysis then yields a main cluster "halfset" of observations, with the remaining observations becoming one or more minor clusters. An initial regression estimator arises from the main cluster, with a multiple point addition DFFITS argument used to carefully activate the minor clusters through a bounded influence regression framework. CBI achieves a 50% breakdown point, is regression equivariant, scale equivariant and affine equivariant and distributionally is asymptotically normal. Case studies and Monte Carlo studies demonstrate the performance advantage of CBI over S1S and the other high breakdown methods regarding coefficient stability, scale estimation and standard errors. A dendrogram of the clustering process is one graphical display available for multivariate outlier detection. Overall, the proposed methodology represents advancement in the field of robust regression, offering a distinct philosophical viewpoint towards data analysis and the marriage of estimation with diagnostic summary. / Ph. D.

Arsenic is a naturally occurring element, which is toxic to aquatic biota especially in disturbed areas where it may be found at high concentrations. A headwater stream adjacent to an 85 year-old abandoned arsenic mine was investigated to determine the influence of arsenic on stream biota and processes using an upstream (reference) and downstream (mine-influenced) comparative approach. Arsenic concentration was measured monthly at 10 sites along the stream length. Benthic macroinvertebrate surveys were conducted in both reaches five times throughout the course of a year. Leaf breakdown assays were conducted in reference and mine-influenced reaches. Leaf biofilm respiration was recorded during leaf breakdown assays and also with experimental arsenic additions to reference reach leaf biofilms. At the field site, arsenic concentrations varied from below detection limit (<2.5µg/L) to more than 12 mg/L. Macroinvertebrate density was greatly reduced down-gradient of the mine with 154 individuals/m2, while upstream there were 7869 individuals/m2. Leaf biofilm respiration rates were comparable to others found in the literature and not significantly different between reference and mine-influenced reaches. Further, experimental additions of arsenic did not alter biofilm respiration under laboratory conditions. However, shredder abundance on leaf packs was eight to twenty times greater upstream than the mine-influenced reach. Leaf breakdown rate varied two to three fold among sites distributed above and below the mine and were significantly lower in reaches of elevated arsenic concentration. Together, these data suggest that the mining operations on this headwater stream have altered organic matter processing primarily by decreasing invertebrate densities and limiting shredder abundance. / Master of Science

As modern satellite communication systems move toward multi-carrier high power communications, there is an increased need for high-power RF devices in the space industry. However, at high-power some RF devices have exhibited an electron plasma (multipactor electron avalanche discharge) that severely damages the RF device and could render it unusable. This is especially a problem in space where repairs to communication equipment is cost-prohibitive. As a result, a number of models have been developed in recent years to predict the onset of multipactor discharge. However, most existing models can only analyze selected geometries and they also require a large number of electrons to predict the power at which multipactor discharge will occur. This has placed a limitation on the types of RF structures that can be analysed for multipactor breakdown. This research work, uses a new generalized procedure to develop an efficient multipactor model that could be used to analyze the complex structures found in the commercial space industry, by coupling EM field information from established industry-standard EM solvers. A robust secondary emission model is also developed in order to model the advanced phenomenological characteristics of secondary emission that are not taken into account in other models. The result of the generalized approach taken in this research is a highly efficient multipactor model that requires far fewer electrons to be analysed in order to converge to accurate results, and the ability to analyse more complex RF structures than current models. Multipactor analysis for different structures were performed, and the breakdown results predicted by this model were in good agreement with other models where expected. However, for other cases where certain simplifying assumptions do not hold true, such as higher order waveguide multipaction and high impedance transmission line multipaction, results provided by this model were found to be more accurate and efficient when compared to other models.

As modern satellite communication systems move toward multi-carrier high power communications, there is an increased need for high-power RF devices in the space industry. However, at high-power some RF devices have exhibited an electron plasma (multipactor electron avalanche discharge) that severely damages the RF device and could render it unusable. This is especially a problem in space where repairs to communication equipment is cost-prohibitive. As a result, a number of models have been developed in recent years to predict the onset of multipactor discharge. However, most existing models can only analyze selected geometries and they also require a large number of electrons to predict the power at which multipactor discharge will occur. This has placed a limitation on the types of RF structures that can be analysed for multipactor breakdown. This research work, uses a new generalized procedure to develop an efficient multipactor model that could be used to analyze the complex structures found in the commercial space industry, by coupling EM field information from established industry-standard EM solvers. A robust secondary emission model is also developed in order to model the advanced phenomenological characteristics of secondary emission that are not taken into account in other models. The result of the generalized approach taken in this research is a highly efficient multipactor model that requires far fewer electrons to be analysed in order to converge to accurate results, and the ability to analyse more complex RF structures than current models. Multipactor analysis for different structures were performed, and the breakdown results predicted by this model were in good agreement with other models where expected. However, for other cases where certain simplifying assumptions do not hold true, such as higher order waveguide multipaction and high impedance transmission line multipaction, results provided by this model were found to be more accurate and efficient when compared to other models.