The growing interest in high speed and RF technologies assert for the importance of reliability characterization beyond the conventional DC methodology. In this work, the influence of bias temperature instability (BTI) stress on RF small signal parameters is shown. The correlation between degradation of DC and RF parameters is established which enables the empirical modelling of stress induced changes. Furthermore, S-Parameters characterization is demonstrated as the tool to qualitatively distinguish between HCI and BTI degradation mechanisms with the help of extracted small signal gate capacitances.