In recent years, BiFeO3 (BFO) has attracted much attention due to that exhibits ferroelectric and antiferromagnetic properties at room temperature. It potentially develops the spintronics and multiple-state memories. BFO suffered from serious leakage, therefore the BFO discussed in this report has doped 10% Pb to reduce the leakage problem. The thin films are synthesized by radio frequency (RF) sputtering technique. The conductive SrRuO3 (SRO) thin film is deposited on the SrTiO3 (STO) substrate as a buffer layer and bottom electrode for piezoelectric measurements and subsequently deposited the multiferroics- BFO thin film. Atomic force microscopy (AFM) and piezoresponse force microscopy (PFM) are used to observe the morphologies and domain images in nanometer scale by different parameters and avoid the disturbance of leakage reasonably. The variations of piezoelectric properties through grain-grain boundary and domain-domain boundary are also studied in this report.

With the combination of ferroelectric, ferromagnetic and the mutual coupling properties, multiferroics attracts a lot of researcher's attentions recently. Among of which BiFeO3 has caught extensive attention for it manifests multiferroic effects above the room temperature. However, the instability of Bi serious electric leakage is the major drawback. From early study in our group, it was found the Pb doping at Bi sites could stabilize Bi1-xPbxFeO3 phase . In this research Bi1-xPbxFeO3 compound is, then, used to grow films. The goal of this thesis is to understand how the grown conditions and their mechanism in affecting the properties of films. Bi0.9Pb0.1FeO3 target was formed by a solid state reaction method,Bi0.9Pb0.1FeO3 films were deposited by RF sputtering system on top of the SrRuO3 thin film which was pre-grown on the SrTiO3 (001) substrate as a conducting layer. It is found that the relative position between target and substrate is important for film growth. By analizing the AFM, XRD and EDS data, the grain sizes, the length of c-axis and the content of films are dependent on the growth temperature.

In this study, we study the annealing effect of Bi0.9Pb0.1FeO3 bulk in various time span and the various growth conditions of Bi0.9Pb0.1FeO3 thin film to physical proporties, such as crystal structure, surface amorphous, delectric properties. With these effort, this study wish to find a better growth condition for Bi0.9Pb0.1FeO3 film that exhibit the best ferroelectric property, and to understant the possible mechanism underlaying the growth conditions to the physical properties. It is found that the doping of Pb in Bi0.9Pb0.1FeO3 compound does stabalize the formation of single phase Bi0.9Pb0.1FeO3 ,however, this stabalization can only postpone the decay of Bi0.9Pb0.1FeO3 properties when is annealed in a long period of time. The crystal strucutre of Bi0.9Pb0.1FeO3 is very close to a pseudocubic structure in which oxgyen sites locate noncenter-symmetrically that generates a stronge electric polariztion. The various growth conditions has a very stong influence to the physical properties of Bi0.9Pb0.1FeO3 thin films. For those films grwon at 700oC exibits the best delectricity. The grain size of films grows as grwoth time as resutl of this the thicker the film thelarger the grain size. The electric hysterises property measured by PFM is observed for grain itself, however, the grain boundaries where accumulates many possible defects exhibits a large electric leakage therefore no saturated polarization is observed if a large area of electrode is used.