Thesis (Ph. D.)--State University of New York at Binghamton, Materials Science and Engineering Program, 2009. / Includes bibliographical references.

The addition of hexagonal boron nitride (h-BN) has introduced a comprehensive reinforcing effect to the mechanical and electrochemical properties of commercial concrete, including fiber reinforced concrete (FRC) and steel fiber reinforced concrete (SFRC). Although this has been proven effective and applicable, further investigation and study is still required to optimize the strengthen result which will involve the exfoliation of h-BN into single-layered nano sheet, improving the degree of dispersion and dispersion uniformity of h-BN into concrete matrix. There is currently no direct method to test the degree of dispersion of non-conductive particles, including h-BN, in concrete matrix, therefore it is necessary to obtain an analogous quantification method like SEM, etc. The reinforcing mechanism on concrete, including FRC and SFRC is now attracting a great number of interest thanks to the huge potential of application and vast demand across the world. This study briefly describes the reinforcing mechanism brought by h-BN. In this study, different samples under varied conditions were prepared according to the addition of h-BN and dispersant to build a parallel comparison. Characterization is mainly focused on their mechanical properties, corrosive performance and SEM analysis of the cross-section of post-failure samples.

Glasses and ceramics offer several unique characteristics over polymers or metals. However, they suffer from a shortcoming due to their brittle nature, falling short in terms of fracture toughness and mechanical strength. The aim of this work is to reinforce borosilicate glass matrix with reinforcements to increase the fracture toughness and strength of the glass. Boron nitride nanomaterials, i.e. nanotubes and nanosheets have been used as possible reinforcements for the borosilicate glass matrix. The tasks of the thesis are many fold which include: 1. Reinforcement of commercially derived and morphologically different (bamboo like and cylinder like) boron nitride nanotubes in borosilicate glass with the concentration of 0 wt%, 2.5 wt% and 5 wt% by ball milling process. Same process was repeated with reinforcing cleaned boron nitride nanotubes (after acid purification) into the borosilicate glass with similar concentrations. 2. Production of boron nitride nanosheets using liquid exfoliation technique to produce high quality and high aspect ratio nanosheets. These boron nitride nanosheets were reinforced in the borosilicate glass matrix with concentrations of 0 wt%, 2.5 wt% and 5 wt% by ball milling process. The samples were consolidated using spark plasma sintering. These composites were studied in details in terms of material analysis like thermo-gravimetric analysis, detailed scanning electron microscopy and transmission electron microscopy for the quality of reinforcements etc.; microstructure analysis which include the detailed study of the composite powder samples, the densities of bulk composite samples etc; mechanical properties which include fracture toughness, flexural strength, micro-hardness, Young’s modulus etc. and; tribological properties like scratch resistance and wear resistance. Cleaning process of boron nitride nanotubes lead to reduction in the Fe content (present in boron nitride nanotubes during their production as a catalyst) by ~54%. This leads to an improvement of ~30% of fracture toughness measured by chevron notch technique for 5 wt% boron nitride nanotubes reinforced borosilicate glass. It also contributed to the improvement of scratch resistance by ~26% for the 5 wt% boron nitride nanotubes reinforced borosilicate glass matrix. On the other hand, boron nitride nanosheets were successfully produced using liquid exfoliation technique with average length was ~0.5 µm and thickness of the nanosheets was between 4-30 layers. It accounted to an improvement of ~45% for both fracture toughness and flexural strength by reinforcing 5 wt% of boron nitride nanosheets. The wear rates reduced by ~3 times while the coefficient of friction was reduced by ~23% for 5 wt% boron nitride nanosheets reinforcements. Resulting improvements in fracture toughness and flexural strength in the composite materials were observed due to high interfacial bonding between the boron nitride nanomaterials and borosilicate glass matrix resulting in efficient load transfer. Several toughening and strengthening mechanisms like crack bridging, crack deflection and significant pull-out were observed in the matrix. It was also observed that the 2D reinforcement served as more promising candidate for reinforcements compared to 1D reinforcements. It was due to several geometrical advantages like high surface area, rougher surface morphology, and better hindrance in two dimensions rather than just one dimension in nanotubes.

This study details the dielectrophoretic assembly and mechanical characterization of boron nitride nanotubes on silicon chips with gold electrodes. The chips were fabricated from 4in round silicon wafers with a 100nm-thick low stress silicon nitride insulating layer on the top and bottom. The electrodes were patterned using photo- and electron-beam lithography and dry etching, and the wafers were cut into 4 x 6mm chips. The boron nitride nanotubes studied were obtained from NIA and were synthesized via a unique pressurized vapor/condensor method, which produced long, small-diameter BNNTs without the use of a catalyst. These nanotubes were studied due to their desirable mechanical and electrical properties, which allow for unique applications in various areas of science, engineering, and technology. Applications span from magnetic manipulation to the formation of biocomposites, from nano-transistors to humidity and pH sensors, and from MRI contrast agents to drug delivery. The nanotubes and nanotube bundles characterized were suspended over gaps of 300 to 500nm. This study was unique in that assembly was performed using dielectrophoresis, allowing for batch fabrication of chips and devices. Also, stiffness measurements were performed using AFM, eliminating the reliance of other methods upon electron microscopes, and allowing for imaging and measurements to occur simultaneously and at high resolution. It was found that DEP parameters of V = 2.0Vpp, f = 1kHz, and t = 2min provided the best results for mechanical testing. The nanotubes tested had suspended lengths of 300nm, the width of the electrode gap, and diameters of 15–65nm. Chips were imaged with both scanning electron microscopy and atomic force microscopy. Force-displacement measurements with atomic force microscopy were used to find stiffness values in the range of 1–16N/m. These stiffness values, when plugged into a simple double-clamped beam model, indicated Young’s moduli of approximately 1–1600GPa. Within this wide range, it was shown that a decrease in diameter strongly correlated exponentially to an increase in Young’s modulus. Work in this study was divided between assembly and characterization. Therefore, a lot of time was spent working to optimize dielectrophoresis parameters, followed by SEM and AFM imaging. Parameters that were adjusted included DEP voltage and time, pre-DEP sonication times, as well as adding a centrifuging procedure to attempt to better separate nanotube bundles in solution. Another method discussed but not pursued was the use of surfactants to agitate the solution, thus separating the nanotubes. The reason this material in particular was so difficult to separate was twofold. First, the small size of the nanotubes—individual BNNTs have diameters on the order of ∼5 nanometers—generates very strong nanoscale van der Waals forces holding the nanotubes together. Larger nanotubes—with diameters on the order of 50 to 100nm or more—suffer less from this problem. Also, the dipoles created by the boron-nitrogen bonds cause attraction between adjacent nanotubes. The results shown in this thesis include DEP parameters, SEM and AFM images, and force- displacement curves leading to nanotube stiffness and Young’s modulus values. The force-displacement tests via AFM are also detailed and explained.

Master of Science / Department of Mechanical and Nuclear Engineering / Jeffrey Geuther / William L. Dunn / The properties of hexagonal boron nitride (h-BN) as a semiconductor neutron detection medium were investigated. Single h-BN crystal domains were synthesized by the Chemical Engineering department at Kansas State University (KSU) using crystallization from molten metal solutions. At Texas Tech University (TTU), a detector was fabricated using epitaxial h-BN growth on a sapphire substrate where metallic micro-strip contacts 5 [mu]m apart and 5 nm thick where deposited onto the un-doped h-BN. In this research both the crystal domains synthesized at KSU and the detector fabricated at TTU were tested for neutron response. Neutron irradiation damage/effects were studied in pyrolytic h-BN by placing samples in the central thimble of the TRIGA MARK II reactor at KSU and irradiating at increasing neutron fluences. The domains synthesized at KSU as well as the detector fabricated at TTU showed no response to neutron activity on a MCA pulse height spectrum. Conductivity analysis showed abrupt increases in the conductivity of the pyrolytic h-BN at around a fluence of 10[superscript]1[superscript]4 neutrons per cm[superscript]2. Bandgap analysis by photoluminescence on the irradiated pyrolytic h-BN samples showed shifts in energy due to towards plane stacking disorders upon neutron irradiation. Future efforts may include the introduction of dopants in h-BN growth techniques for charge carrier transport improvement, and mitigation of plane stacking disorders.

Doctor of Philosophy / Department of Chemical Engineering / Vikas Berry / Nanoscale materials invite immense interest from diverse scientific disciplines as these provide access to precisely understand the physical world at their most fundamental atomic level. In concert with this aim of enhancing our understanding of the fundamental behavior at nanoscale, this dissertation presents research on three nanomaterials: Gold nanoparticles (GNPs), Graphene and ultra-thin Boron Nitride sheets (UTBNSs). The three-fold goals which drive this research are: incorporating mobility in nanoparticle based single-electron junction constructs, developing effective strategies to functionalize graphene with nano-forms of metal, and exfoliating ultrathin sheets of Boron Nitride. Gold nanoparticle based electronic constructs can achieve a new degree of operational freedom if nanoscale mobility is incorporated in their design. We achieved such a nano-electromechanical construct by incorporating elastic polymer molecules between GNPs to form 2-dimensional (2-D) molecular junctions which show a nanoscale reversible motion on applying macro scale forces. This GNP-polymer assembly works like a molecular spring opening avenues to maneuver nano components and store energy at nano-scale. Graphene is the first isolated nanomaterial that displays single-atom thickness. It exhibits quantum confinement that enables it to possess a unique combination of fascinating electronic, optical, and mechanical properties. Modifying the surface of graphene is extremely significant to enable its incorporation into applications of interest. We demonstrated the ability of chemically modified graphene sheets to act as GNP stabilizing templates in solution, and utilized this to process GNP composites of graphene. We discovered that GNPs synthesized by chemical or microwave reduction stabilize on graphene-oxide sheets to form snow-flake morphologies and bare-surfaces respectively. These hybrid nano constructs were extensively studied to understand the effect and nature of GNPs’ interaction with graphene, and applied to address the challenge of dispersing bare-surfaced GNPs for efficient liquid-phase catalysis. We also revisited the functionalization of graphene and present a non-invasive surface introduction of interfaceable moieties. Isostructural to graphene, ultrathin BN sheet is another atomic-thick nanomaterial possessing a highly diverse set of properties inconceivable from graphene. Exfoliating UTBNSs has been challenging due to their exceptional intersheet-bonding and chemical-inertness. To develop applications of BN monolayers and evolve research, a facile lab-scale approach was desired that can produce processable dispersions of BN monolayers. We demonstrated a novel chlorosulfonic acid based treatment that resulted in protonation assisted layer-by-layer exfoliation of BN monolayers with highest reported yields till date. Further, the BN monolayers exhibited extensively protonated N centers, which are utilized for chemically interfacing GNPs, demonstrating their ability to act as excellent nano-templates. The scientific details obtained from the research shown here will significantly support current research activities and greatly impact their future applications. Our research findings have been published in ACS Nano, Small, Journal of Physical Chemistry Letters, MRS Proceedings and have gathered >45 citations.

Le nitrure de bore hexagonal (h-BN) est un semi-conducteur à large bande interdite (~ 6 eV) avec une stabilité thermique et chimique très élevées lui offrant la possibilité d'être utilisé dans des dispositifs fonctionnant dans des conditions de fonctionnements extrêmes. La nature indirecte de la bande interdite dans h-BN a été étudiée à la fois par des calculs théoriques et par des expériences. Un exciton indirect et des recombinaisons assistées par phonons dans h-BN ont été observées par photoluminescence.Durant cette thèse, nous avons étudié les propriétés optiques de cristaux massifs et de couches hétéro-épitaxiales de nitrure de bore hexagonal. Nous avons étudié des échantillons provenant de différentes sources et des cristaux qui ont été fabriqués en utilisant différentes méthodes de croissance pour nous permettre de mesurer les propriétés optiques intrinsèques de h-BN. Nous rapportons l'impact des symétries des phonons sur la réponse optique du h-BN en effectuant des mesures photoluminescence résolues par polarisation. L’analyse des données en polarisation, nous permet de mesurer la contribution du phonon manquant, celui qui n'a pas été détectée avant cette thèse. En suite, nous démontrons que l'origine de la structure fine du spectre de PL provient pour chaque réplique phonon d’une diffusion complémentaire de type Raman faisant intervenir le mode de phonon E2g à basse énergie (mode de cisaillement inter-feuillets). Les spectroscopies de photoluminescence et de diffusion inélastique Raman ont été combinées pour quantifier l'influence des effets isotopiques sur les propriétés optiques de h-BN ainsi pour révéler que les modifications des interactions de van de Waals liées à l'utilisation de 10B et 11B ou du bore naturel pour la croissance de cristaux h-BN massifs.Enfin, nous étudions des epitaxis de h-BN crues par Épitaxie sous Jets Moléculaires. L'utilisation conjointe de l’imagerie par microscopie à force atomique (AFM) et de la spectroscopie de photoluminescence permet de comprendre la première observation de recombinaison assistée par phonons dans des épitaxies de h-BN sur le saphir et le graphite. Ce résultat indique que la croissance de h-BN à large échelle par méthode épitaxiales est en voie d'acquérir la maturité nécessaire au développement technologique de h-BN. / Hexagonal boron nitride (h-BN) is a wide bandgap (~ 6 eV) semiconductor with a very high thermal and chemical stability often used in devices operating under extreme conditions. The indirect nature of the bandgap in h-BN is investigated by both theoretical calculations and experiments. An indirect excion and phonon-assisted reombinations in h-BN are observed in photoluminescene spectroscopy.This thesis focus on the optical properties of bulk and epilayers of h-BN. We investigated samples from different sources grown different methods in order to confirm the intrinsic optical properties of h-BN. We report the impact of the phonon symmetry on the optical response of h-BN by performing polarization-resolved PL measurements. From them, we will measure the contribution of all the phonon-assisted recombination which was not detected before this thesis. We follow by addressing the origin of the fine structure of the phonon-assisted recombinations in h-BN. It arises from overtones involving up to six low-energy interlayer shear phonon modes, with a characteristic energy of about 6.8 meV.Raman and photoluminescence measurements are recorded to quantify the influence of isotope effects on optical properties of h-BN as well as the modifications of van de Waals interactions linked to utilization of 10B and 11B or natural Boron for the growth of bulk h-BN crystals.Finally, we study h-BN thin epilayers grown by Molecular Beam Epitaxy at Nottingham University, atomic force microscopy (AFM) images and photoluminescence features are combined to confirm the first observation of phonon-assisted recombination in high quality thin h-BN epilayers grown on c-plane sapphire and Highly Ordered Pyrolitic Graphite. This demontrates that large scale growth of h-BN by epitaxy is getting a technologically required maturity.

Graphene, since its first isolation, carries many promises on its superior properties. However, unlike its conventional two-dimensional (2D) counterparts, e.g. Si and GaAs systems, graphene represents the first 2D systems built on an atomically thin structure. With every atoms on the surface, graphene is severely affected by the environment and the measured properties have not reaching its full potential. Avoiding all possible external contamination sources is the key to keep graphene intact and to maintain its high quality electronic properties. To achieve this, it requires a revolution in the graphene device structure engineering, because all factors in a conventional process are scattering sources, i.e. substrate, solvent and polymer residues. With our recent two inventions, i.e. the van der Waals transfer method and the metal-graphene edge-contact, we managed to completely separate the layer assembly and metallization processes. Throughout the entire fabrication process, the graphene layer has never seen any external materials other than hexagonal boron nitride, a perfect substrate for graphene. Both optical and electrical characterizations show our device properties reach the theoretical limit, including low-temperature ballistic transport over distances longer than 20 micrometers, mobility larger than 1 million cm²/Vs at carrier density as high as 2 ×10^12 cm^-2, and room-temperature mobility comparable to the theoretical phonon-scattering limit. Moreover, for the first time, we demonstrate the post-fabrication cleaning treatments, annealing, is no longer necessary, which greatly eases integration with various substrate, such as CMOS wafers or flexible polymers, which can be damaged by excessive heating. Therefore the progress made in this work is extremely important in both fundamental physics and applications in high quality graphene electronic devices. Furthermore, our work also provides a new platform for the high quality heterostructures of the 2D material family.

Thesis (M.S.)--State University of New York at Binghamton, Thomas J. Watson School of Engineering and Applied Sciences, Systems Science and Industrial Engineering Department, 2006. / Includes bibliographical references.

Successful operation of Nano-ElectroMechanical Systems (NEMS) critically depends on their working environment and component materials' electromechanical properties. It is equally important that ambient or liquid environment to be seriously considered for NEMS to work as high sensitivity sensors with commercial viabilities. Firstly, to understand interaction between NEMS oscillator and fluid, transfer function of suspended gold nanowire NEMS devices in fluid was calculated. It was found that NEMS's resonance frequency decreased and energy dissipation increased, which constrained its sensitivity. Sensitivity limit of NEMS oscillators was also considered in a statistical framework. Subsequently, suspended gold nanowire NEMS devices were magnetomotively actuated in vacuum and liquid. Secondly, electromechanical properties of gold nanowires were carefully studied and the observed size effect was found to agree with theory, which predicted small changes of electromechanical property compared with bulk gold materials. Finally, it is well recognized that continuous development of new NEMS devices demands novel materials. Mechanical properties of new two-dimensional hexagonal Boron Nitride films with a few atomic layers were studied. Outlook of utilizing ultrathm BN films in next generation NEMS devices was discussed.