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"Uniaxial Cyclic Stretch-Stimulated Glucose Transport Is Mediated by a Ca2+-Dependent Mechanism in Cultured Skeletal Muscle Cells" Pathobiology, v.74, n.3, pp.159-168を、博士論文として提出したもの。 / 名古屋大学博士学位論文 学位の種類:博士（リハビリテーション療法学）（課程）学位授与年月日:平成19年3月23日

Abstract Recently, the large magneto-resistance effects in epitaxial manganite thin films has interested in the doped manganite perovskite materials for magnetic random access memory (MRAM) and read-head application. The relation between the magneto-resistance and microstructure of the colossal magneto-resistance materials has been evaluated in this study. Different thickness of La0.67Ca0.33Mn03 (LCMO) thin films were grown on (001) MgO and (001) SrTi03 (STO) substrates at growth temperature 750 degree C with RF magnetron sputtering technique, respectively. These substrates provide two different lattice-mismatch conditions for the LCMO films (+9% for MgO and +1% for STO). The crystal structure of LCMO films were characterized with X-ray diffraction (XRD), the surface morphology of LCMO films were observed by scanning electron microscope (SEM), the interface of microstructure between LCMO films and substrate were studied by transmission electron microscope (TEM), the thickness and chemical composition of LCMO films were determined by Rutherford backscattering spectrometer (RBS), and finally the resistance and I-M transition temperature were evaluated at temperature range from 77K to 300K. The results show that the epitaxial LCMO films with a superlattice structure were obtained on STO substrate and polycrystal structure of LCMO films were on MgO substrate due to larger lattice mismatch.. The transition temperature of magneto-resistance of LCMO thin film is quite sensitive with film thickness. The transition temperature increases with film thickness increased. When the film with thickness excess of 2000A, the transition temperature is nearly same as that of LCMO bulk material.. The existed strain and the microstructure of LCMO films are two important factors related with magnetic resistance and electrical properties of LCMO films.

Abstract Recent progress in oxide perovskite thin-film technology has led to the discovery of a large negative magnetoresistance in doped manganate perovskite thin films. These films may have potentials for magnetic random access memory (MRAM) and magnetic sensors. Therefore, the research of magnetoresistance has been attracted a lot of attentions. The magnetoresistance is directly related to the microstructure. In an application point of view, the ulta-thin film may be more appropriate compares with those utilizing with thicker films. In this paper, we report the detail results of electrical property of La0.67Ca0.33MnO3 (LCMO) films related with their microstructure. The La0.67Ca0.33MnO3 (LCMO) films were deposited on (001) STO substrate with RF sputtering technique. The working pressure was maintained at 100m torr and the growth temperature was kept at 750¢J. After growth the films was annealed at 850¢J for 1 hour in a 500 torr O2 annealing environment. The growth time was 3mins.¡B6mins. and 12mins. respectively. The crystal structure of LCMO films were characterized with X-ray diffraction (XRD). The surface morphology of LCMO films were observed by scanning electron microscope (SEM) and the interface of microstructure between LCMO films and STO substrate were investigated by transmission electron microscope (TEM). Finally the M-I transition temperature were evaluated with 4-point probe at the temperature range from 300K down to 77K. The results show that the LCMO films were amorphous when the growth time was in 3 mins. The microstructure of the film gradually became poly-crystal and had a (001) prefer orientation after the growth time increasing to 6 mins. The grain size of the 12 mins growth film was at 40-50 nm scale. The Curie temperature and magnetoresistance change of these films were increased as the degree of crystallization of these films became better.

<p>High quality perovskite manganites, La1_-xA_xMnO₃ (A = Ca, Sr, Ba) are very attractive materials due to their great application potential for magnetic memory, uncooled infrared (IR) microbolometer and spintronics devices. This thesis presents studies of the growth and material characterization (including structural, electrical, magnetic and noise) of epitaxial manganite films on Si and GaAs. Furthermore, investigations about strain effect on structural and electrical properties of manganites, and finally fabrication of self-supported free standing microstructures for uncooled IR bolometer are also demonstrated.</p><p>To obtain high quality epitaxial manganite films on semiconductor substrates at room temperature, using a combination of La_0.67Sr₀.₃₃MnO₃(LSMO) and La_0.67Ca_0.33MnO₃(LCMO) compounds, La_0.67(Sr,Ca)_0.33MnO₃ (LSCMO) films were successfully grown on Si substrates with Bi₄Ti₃O₁₂(BTO)/CeO₂/YSZ buffers by pulsed laser deposition (PLD) technique. Crystallographic relations between layers shows cube-on-cube for BTO/CeO2/YSZ/Si and diagonal-on-side for LSCMO films on BTO layer. 4.4 %K^-1maximum temperature coefficient of resistivity (TCR = 1/ρ·dρ/dT) and 2.9 %kOe^-1 colossal magnetoresistance (CMR) were obtained at room temperature. Assuming of a prototype of temperature sensor, 1.2 μK/√Hz of noise equivalent temperature difference (NETD) and 2.9×10⁸ cm√Hz/W of detectivity are expected to achieve at 294 K, 30 Hz. For GaAs substrates, using MgO buffer layer, LCMO films shows 9.0 %K^-1 of TCR at 223 K while LSMO exhibits 2 %K^-1 at 327 K.</p><p>Systematic strain effects on structural and electrical properties of La₀.₇₅Sr_0.25MnO₃ LSMO) films on BTO/CeO2/YSZ-buffered Si, Si_1-xGe_x/Si (compressive strain, x = 0.05-0.20) and Si_1-yC_y/Si (tensile, y = 0.01) were investigated. The strain induced from Si_1-xGe_x/Si and Si_0.99C_0.01/Si has a tendency to decrease the roughness of CMR films compared to Si sample. High resistivity and low TCR values are observed for Si_0.8Ge₀.₂/Si and Si_0.99C_0.01/Si samples due to excessive strains whereas Si₀.₉Ge_0.1/Si and Si_0.95Ge_0.05/Si show slight improvements of films quality and TCR value.</p><p>To fabricate LSCMO manganite bolometer on Si, wet etching with KOH and BHF and dry etching methods with Ar ion beam etching (IBE) were studied. For KOH wet etching, LSCMO films show high chemical resistance with lower than 0.2 nm/min of etch rate. BHF wet etching shows high etching selectivity over photoresist mask and silicon substrates. The etch rates for LSCMO and BTO layers are 22 and 17 nm/min. For Ar IBE, LSCMO films and oxide buffer layers show similar etch rates, 16-17 nm/min that are lower compared to 24 nm/min for Si.</p><p>Free standing, self-supported heteroepitaxial LSCMO/BTO/CeO₂/YSZ membranes for bolometer pixels on Si was successfully fabricated by Ar IBE and ICP etching techniques using a preannealed photoresist. The structural investigation by TEM revealed the sharp interfaces between layers. The electrical property of the free standing membrane was slightly degraded due to strain release and multi-step etching effect. These results demonstrate feasibility to use heteroepitaxial oxide structures as a thermally isolated membrane with conventional photoresist patterning.</p>

Texte remanié de: Thèse de doctorat--Langue et littérature française et comparée--Paris 4, 2005. / Bibliogr. p. 345-428. Index.

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