This thesis reports the development and analysis of high performance CMOS readout electronics for increasing the performance of MEMS gyroscopes developed at Middle East Technical University (METU). These readout electronics are based on unity gain buffers implemented with source followers. High impedance node biasing problem present in capacitive interfaces is solved with the implementation of a transistor operating in the subthreshold region. A generalized fully differential gyroscope model with force feedback electrodes has been developed in order to simulate the capacitive interfaces with the model of the gyroscope. This model is simplified for the single ended gyroscopes fabricated at METU, and simulations of resonance characteristics are done. Three gyroscope interfaces are designed by considering the problems faced in previous interface architectures. The first design is implemented using a single ended source follower biased with a subthreshold transistor. From the simulations, it is observed that biasing impedances up to several gigaohms can be achieved. The second design is the fully differential version of the first design with the addition of a self biasing scheme. In another interface, the second design is modified with an instrumentation amplifier which is used for fully differential to single ended conversion. All of these interfaces are fabricated in a standard 0.6 &micro / m CMOS process. Fabricated interfaces are characterized by measuring their ac responses, noise response and transient characteristics for a sinusoidal input. It is observed that, biasing impedances up to 60 gigaohms can be obtained with subthreshold transistors. Self biasing architecture eliminates the need for biasing the source of the subthreshold transistor to set the output dc point to 0 V. Single ended SOG gyroscopes are characterized with the single ended capacitive interfaces, and a 45 dB gain improvement is observed with the addition of capacitive interface to the drive mode. Minimum resolvable capacitance change and displacement that can be measured are found to be 58.31 zF and 38.87 Fermi, respectively. The scale factor of the gyroscope is found to be 1.97 mV/(&deg / /sec) with a nonlinearity of only 0.001% in &plusmn / 100 &deg / /sec measurement range. The bias instability and angle random walk of the gyroscope are determined using Allan variance method as 2.158 &deg / /&amp / #8730 / hr and 124.7 &deg / /hr, respectively.

This thesis reports the development of high-performance symmetric and decoupled micromachined gyroscopes for tactical-grade inertial measurement applications. The symmetric structure allows easy matching of the resonance frequencies of the drive and sense modes of the gyroscopes for achieving high angular rate sensitivity / while the decoupled drive and sense modes minimizes mechanical cross-coupling for low-noise and stable operation. Three different and new symmetric and decoupled gyroscope structures with unique features are presented. These structures are fabricated in four different micromachining processes: nickel electroforming (NE), dissolved-wafer silicon micromachining (DWSM), silicon-on-insulator (SOI) micromachining, and silicon-on-glass (SOG) micromachining. The fabricated gyroscopes have capacitive gaps from 1.5&micro / m to 5.5&micro / m and structural layer thicknesses from 12&micro / m to 100&micro / m, yielding aspect ratios up to 20 depending on the fabrication process. The size of fabricated gyroscope chips varies from 1x1mm2 up to 4.2x4.6mm2. Fabricated gyroscopes are hybrid-connected to a designed capacitive interface circuit, fabricated in a standard 0.6&micro / m CMOS process. They have resonance frequencies as small as 2kHz and as large as 40kHz / sense-mode resonance frequencies can be electrostatically tuned to the drive-mode frequency by DC voltages less than 16V. The quality factors reach to 500 at atmospheric pressure and exceed 10,000 for the silicon gyroscopes at vacuum. The parasitic capacitance of the gyroscopes on glass substrates is measured to be as small as 120fF. The gyroscope and interface assemblies are then combined with electronic control and feedback circuits constructed with off-the-shelf IC components to perform angular rate measurements. Measured angular rate sensitivities are in the range from 12&micro / V/(deg/sec) to 180&micro / V/(deg/sec), at atmospheric pressure. The SOI gyroscope demonstrates the best performance at atmospheric pressure, with noise equivalent rate (NER) of 0.025(deg/sec)/Hz1/2, whereas the remaining gyroscopes has an NER better than 0.1(deg/sec)/Hz1/2, limited by either the small sensor size or by small quality factors. Gyroscopes have scale-factor nonlinearities better than 1.1% with the best value of 0.06%, and their bias drifts are dominated by the phase errors in the demodulation electronics and are over 1deg/sec. The characterization of the SOI and SOG gyroscopes at below 50mTorr vacuum ambient yield angular rate sensitivities as high as 1.6mV/(deg/sec) and 0.9mV/(deg/sec), respectively. The NER values of these gyroscopes at vacuum are smaller than 50(deg/hr)/Hz1/2 and 36(deg/hr)/Hz1/2, respectively, being close to the tactical-grade application limits. Gyroscope structures are expected to provide a performance better than 10 deg/hr in a practical measurement bandwidth such as 50Hz, provided that capacitive gaps are minimized while preserving the aspect ratio, and the demodulation electronics are improved.

This research explores a novel in-situ technique for monitoring film thickness in the reactive etching process that incorporates a micromachined sensor. The sensor correlates film thickness with changes in resonant frequency that occurs in the micromachined platform during etching. The sensor consists of a platform that is suspended over drive and sense electrodes on the surface of the substrate. As material is etched from the platform, its resonant vibrational frequency shifts by an amount that is proportional to the amount of material etched, allowing etch rate to be inferred. This RIE monitoring methodology exploits the accuracy of resonant micromechanical structures, whereby shifts in the fundamental resonant frequency measure a physical parameter. A majority of these systems require free-standing mechanical movement and utilize a sacrificial layer process as the key technique to develop and release the structure on a substrate. A sacrificial layer technique that incorporates a low temperature sacrificial polymer was utilized to develop and release the suspended RIE sensor with excellent performance and is capable of fabricating other low cost, high performance and reliable suspended MEMS devices. The integration of sensors and electronic circuitry is a dominant trend in the semiconductor industry, and much work and research has been devoted to this effort. The RIE sensor relies on capacitive transduction to detect small capacitance changes and the resulting change in resonant frequency during the RIE process. The RIE sensor's overall performance is limited by the interface circuit, and integration with the proper circuit allows the RIE sensor to function as a highly sensitive measure of etch rate during the RIE process. A capacitive feedback charge amplifier interface circuit, when configured with the RIE senor at the input achieves very low noise sensing of capacitance changes and offers the potential for wide dynamic range and high sensitivity. As an application vehicle, process control was demonstrated in the PlasmaTherm SLR series RIE system located in the Georgia Tech Microelectronics Research Center.