Spelling suggestions: "subject:"bohemical vapor deposition"" "subject:"bohemical vapor ceposition""
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Preparation and characterization of metalorganic compounds as precursors for the preparation of electronic materials by chemical vapor depositionLuten, Henry Alney, III 08 1900 (has links)
No description available.
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Fluorinated diamond-like carbon films deposited by ion beam CVDMan, Wai Fan 01 January 1999 (has links)
No description available.
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Synthesis of carbon and tungsten based thin films by plasma enhanced chemical vapor depositionChen, Weifeng 26 April 2007
The main objective of this thesis is to find optimum discharge conditions in plasma reactors to realize controlled synthesis of various carbon-based materials with desired properties. Experimental conditions including substrate biasing, substrate pretreatment, gas flow rate, catalyst coating, and the type of carbon source, play important roles in controlling the nucleation and growth of carbon-based materials. In this Ph.D. work, the effects of various processing factors on nucleation and growth of carbon based materials were systematically investigated. The work has led to a better understanding of how each experimental parameter affects the carbon-based materials growth. Optimization of experiment conditions based on this understanding is beneficial for the controlled synthesis of carbon-based materials with desired properties. In addition, the controlled synthesis of tungsten-based nanostructures using a hot filament reactor was studied.<p>The main results presented in this thesis are: <p>(1) Synthesis of well-aligned carbon nanotube or carbon nanocone films with a glow discharge under a negative substrate biasing. The electric field in the plasma sheath above the substrate has been found to play an important role in controlling the alignment and orientation of nanotubes or nanocones. <p>(2) Synthesis of high purity diamond films using solid graphite as the carbon source by graphite etching. The technique provides a route to realizing deposition of high quality diamond films at low substrate temperatures (typically as low as 350 ℃). <p>(3) Successful synthesis of high quality diamond films on aluminum-coated steels using a graphite etching technique. The aluminum interlayer effectively reduces the graphitization which occurs on a steel substrate. <p>(4) Synthesis of nanocrystalline diamond films with smooth surfaces under high gas flow rates with a positive substrate biasing. Both high gas flow rate and positive biasing effectively increase the nucleation density of diamond and therefore reduce the diamond grain size. <p>(5) Synthesis of high purity crystalline tungsten or tungsten oxide nanorod films by optimizing the filament temperature in a hot filament reactor.
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Synthesis of carbon and tungsten based thin films by plasma enhanced chemical vapor depositionChen, Weifeng 26 April 2007 (has links)
The main objective of this thesis is to find optimum discharge conditions in plasma reactors to realize controlled synthesis of various carbon-based materials with desired properties. Experimental conditions including substrate biasing, substrate pretreatment, gas flow rate, catalyst coating, and the type of carbon source, play important roles in controlling the nucleation and growth of carbon-based materials. In this Ph.D. work, the effects of various processing factors on nucleation and growth of carbon based materials were systematically investigated. The work has led to a better understanding of how each experimental parameter affects the carbon-based materials growth. Optimization of experiment conditions based on this understanding is beneficial for the controlled synthesis of carbon-based materials with desired properties. In addition, the controlled synthesis of tungsten-based nanostructures using a hot filament reactor was studied.<p>The main results presented in this thesis are: <p>(1) Synthesis of well-aligned carbon nanotube or carbon nanocone films with a glow discharge under a negative substrate biasing. The electric field in the plasma sheath above the substrate has been found to play an important role in controlling the alignment and orientation of nanotubes or nanocones. <p>(2) Synthesis of high purity diamond films using solid graphite as the carbon source by graphite etching. The technique provides a route to realizing deposition of high quality diamond films at low substrate temperatures (typically as low as 350 ℃). <p>(3) Successful synthesis of high quality diamond films on aluminum-coated steels using a graphite etching technique. The aluminum interlayer effectively reduces the graphitization which occurs on a steel substrate. <p>(4) Synthesis of nanocrystalline diamond films with smooth surfaces under high gas flow rates with a positive substrate biasing. Both high gas flow rate and positive biasing effectively increase the nucleation density of diamond and therefore reduce the diamond grain size. <p>(5) Synthesis of high purity crystalline tungsten or tungsten oxide nanorod films by optimizing the filament temperature in a hot filament reactor.
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Growth of nonpolar ZnO films on LiGaO2 substrate by chemical vapor deposition methodLiao, Yen-Hsiang 17 August 2010 (has links)
Nonpolar m-plane ZnO epitaxial film with [10-10] orientation and a-plane ZnO epitaxial film with [11-20]was successfully grown on a large-size [100] and [010] LiGaO2 (LGO) single crystal substrate by chemical vapor deposition (CVD) method.
The dependence of growth characteristics on the different growth conditions was investigated. Following the CVD growth, the surface morphologies and epi-film crystallinity were studied by a scanning electron microscopy and X-ray diffraction. Room temperature photoluminescence spectra exhibit a strong near-band-edge emission peak at 377 nm with a negligible green band. Further structural characterizations and defect analysis of nonpolar ZnO material were performed using transmission electron microscope (TEM).
This thesis included two different orientations ZnO film. First was ZnO[10-10], which can get good epi-film crystallinity and flat surface morphologies under 750¢J. And we tried to grow under different pressure, the data shown that higher pressure(more than 150 torr) tended to grow ZnO[10-10] orientation on LGO[100] substrate. The other one was ZnO[11-20]. We can get flat and continuous ZnO[11-20] film under 680¢J.
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Platinum/silica thin films by chemical vapor deposition /Martin, Tyler Philip, January 2002 (has links)
Thesis (M.S.) in Chemical Engineering--University of Maine, 2002. / Includes vita. Bibliography: leaves 58-62.
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Characterization of growth and thermal behaviors of thin films for the advanced gate stack grown by chemical vapor depositionJeon, Taek Soo. January 2002 (has links)
Thesis (Ph. D.)--University of Texas at Austin, 2002. / Vita. Includes bibliographical references. Available also from UMI Company.
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Semi-empirical and numerical modeling of metal-organic chemical vapor depositionNami, Ziba 08 1900 (has links)
No description available.
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LCVD synthesis of carbon nanotubes and their characterizationBondi, Scott Nicholas. January 2004 (has links) (PDF)
Thesis (Ph. D.)--Mechanical Engineering, Georgia Institute of Technology, 2005. / Z.L. Wang, Committee Member ; Thomas Starr, Committee Member ; Mostafa Ghiaasiaan, Committee Member ; W. Jack Lackey, Committee Chair; Shreyes Melkote, Committee Member. Vita. Includes bibliographical references.
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Synthesis of aluminum nitride thin films at lower temperatures by metalorganic chemical vapor deposition /Kidder, John N. January 1996 (has links)
Thesis (Ph. D.)--University of Washington, 1996. / Vita. Includes bibliographical references (leaves [158]-168).
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