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  • About
  • The Global ETD Search service is a free service for researchers to find electronic theses and dissertations. This service is provided by the Networked Digital Library of Theses and Dissertations.
    Our metadata is collected from universities around the world. If you manage a university/consortium/country archive and want to be added, details can be found on the NDLTD website.
1

Design and Linearization of Energy Efficiency Power Amplifier in Nonlinear OFDM Transmitter for LTE-5G Applications. Simulation and measurements of energy efficiency power amplifier in the presence of nonlinear OFDM transmitter system and digital predistortion based on Hammerstein-Wiener method

Mohammed, Buhari A. January 2019 (has links)
This research work has made an effort to understand a novel line of radio frequency power amplifiers (RFPAs) that address initiatives for efficiency enhancement and linearity compensation to harmonize the fifth generation (5G) campaign. The objective is to enhance the performance of an orthogonal frequency division multiplexing-long term evolution (OFDM-LTE) transmitter by reducing the nonlinear distortion of the RFPA. The first part of this work explores the design and implementation of 15.5 W class AB RF power amplifier, adopting a balanced technique to stimulate efficiency enhancement and redeeming exhibition of excessive power in the transmitter. Consequently, this work goes beyond improving efficiency over a linear RF power amplifier design; in which a comprehensive investigation on the fundamental and harmonic components of class F RF power amplifier using a load-pull approach to realise an optimum load impedance and the matching network is presented. The frequency bandwidth for both amplifiers was allocated to operate in the 2.620-2.690 GHz of mobile LTE applications. The second part explores the development of the behavioural model for the class AB power amplifier. A particular novel, Hammerstein-Wiener based model is proposed to describe the dynamic nonlinear behaviour of the power amplifier. The RF power amplifier nonlinear distortion is approximated using a new linear parameter approximation approach. The first and second-order Hammerstein-Wiener using the Normalised Least Mean Square Error (NLMSE) algorithm is used with the aim of easing the complexity of filtering process during linear memory cancellation. Moreover, an enhanced adaptive Wiener model is proposed to explore the nonlinear memory effect in the system. The proposed approach is able to balance between convergence speed and high-level accuracy when compared with behavioural modelling algorithms that are more complex in computation. Finally, the adaptive predistorter technique is implemented and verified in the OFDM transceiver test-bed. The results were compared against the computed one from MATLAB simulation for OFDM and 5G modulation transmitters. The results have confirmed the reliability of the model and the effectiveness of the proposed predistorter. / Fundacão para a Ciência e a Tecnologia, Portugal, under European Union’s Horizon 2020 research and innovation programme ... grant agreement H2020-MSCA-ITN- 2016 SECRET-722424 I also acknowledge the role of the National Space Research and Development Agency (NASRDA) Sokoto State Government Petroleum Technology Trust Fund (PTDF)
2

Etude et Conception d’amplificateurs DOHERTY GaN en technologie Quasi - MMIC en bande C / Study and conception of GaN Doherty amplifiers in Quasi - MMIC technology on C band

Ayad, Mohammed 30 June 2017 (has links)
Ce travail répond à un besoin industriel accru en termes d’amplification des signaux sur porteuses à enveloppes variables utilisés par les systèmes de télécommunications actuels. Ces signaux disposent d’un fort PAPR et d’une distribution statistique d’enveloppe centrée en-deçà de la valeur crête d’enveloppe. La raison pour laquelle les industriels télécoms requièrent alors des amplificateurs de très fortes puissances de sortie, robustes, fiables et ayant une dépense énergétique optimale le long de la dynamique d’enveloppe associée à un niveau de linéarité acceptable. Ce document expose les résultats d’étude et de réalisation de deux Amplificateurs de Puissance Doherty (APD) à haut rendement encapsulés en boîtiers plastiques QFN. Le premier est un amplificateur Doherty symétrique classique (APD-SE) et le second est un amplificateur à deux entrées RF (APD-DE). Ces démonstrateurs fonctionnant en bande C sont fondés sur l’utilisation de la technologie Quasi-MMIC associant des barrettes de puissance à base des transistors HEMTs AlGaN/GaN sur SiC à des circuits d’adaptation en technologie ULRC. L’approche Quasi-MMIC associée à la solution d’encapsulation plastique QFN permettant une meilleure gestion des comportements thermiques offre des performances électriques similaires à celles de la technologie MMIC avec des coûts et des cycles de fabrication très attractifs. Durant ces travaux, une nouvelle méthode d’évaluation des transistors dédiés à la conception d’amplificateurs Doherty a été développée et mise en oeuvre. L’utilisation intensive des simulations électromagnétiques 2.5D et 3D a permis de bien prendre en compte les effets de couplages entre les différents circuits dans l’environnement du boîtier QFN. Les résultats des tests des amplificateurs réalisés fonctionnant sur une bande de 1GHz ont permis de valider la méthode de conception et ont montré que les concepts avancés associés à l’approche Quasi-MMIC ainsi qu’à des technologies d’encapsulation plastique, peuvent générer des fonctions micro-ondes innovantes. Les caractérisations de l’APD-DE ont relevé l’intérêt inhérent à la préformation des signaux d’excitation et des points de polarisation de chaque étage de l’amplificateur. / This work responds to an increased industrial need for on carrier signals with variable envelope amplification used by current telecommunications systems. These signals have a strong PAPR and an envelope statistical distribution centred below the envelope peak value, the reason why the telecom industrialists then require a robust and reliable high power amplifiers having an energy expenditure along of the envelope dynamics associated with an acceptable level of linearity. This document presents the results of the study and realization of two, high efficiency, Doherty Power Amplifiers (DPA) encapsulated in QFN plastic packages. The first is a conventional Doherty power Amplifier (DPA-SE) and the second is a dual-input Doherty power amplifier (DPA-DE). These C-band demonstrators are based on the use of Quasi-MMIC technology combining power bars based on the AlGaN/GaN transistors on SiC to matching circuits in ULRC technology. The Quasi-MMIC approach combined with Quasi-MMIC approach combined with QFN plastic package solution for better thermal behaviour management offers electrical performances similar to those of MMIC technology with very attractive coasts and manufacturing cycles. During this work, a new evaluation method for the transistors dedicated to the design of DPA was developed and implemented. The intensive use of 2.5D and 3D electromagnetic simulations made it possible to take into account the coupling effects existing between the different circuits in the QFN package environment. The results of the tests of the amplifiers realised and operating on 1GHz bandwidth validated the design method and showed that the advanced concepts associated with the Quasi-MMIC approach as well as plastic encapsulation technologies can generate innovative microwave functions. The characterizations of the DPA-DE have noted the interest inherent in the preformation of the excitation signals and the bias points of each stage of the amplifier.

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