Cadmium sulfide (CdS) and cadmium telluride (CdTe) are two leading semiconductor materials used in the fabrication of thin film solar cells of relatively high power conversion efficiency and low manufacturing cost. In this work, CdS/CdTe solar cells with a varying set of processing parameters and device designs were fabricated and characterized for comparative evaluation. Studies were undertaken to elucidate the effects of (i) each step in fabrication and (ii) parameters like thickness, sheet resistance, light absorptivity solution concentration, inert gas pressure etc. Best results were obtained when the thickness of CdS planar film for the window layer was in the range of 150 nm to 200 nm. Also, CdS nanowires were fabricated for use as the window layer in CdS-CdTe solar cells. Their materials characteristics were studied with scanning electron microscopy (SEM) and X-ray Diffraction (XRD). Spectral absorption measurements on the planar CdS films and nanowire CdS layers were performed and results compared. It was established that the nanowire CdS design was superior because its absorption of sunlight was far less than that of planar CdS film, which would lead to enhanced performance in the CdS-CdTe solar cell through higher short circuit current density and higher open circuit voltage. Diode behavior of CdS-CdTe devices on planar CdS and nanowire CdS was analyzed and compared. KEYWORDS: Thin Film Solar Cell, Nanowire, UV Absorption, Open-circuit Voltage, Close Space Sublimation