No description available.

For decades, epitaxy is used in nanotechnologies and semiconductor fabrications. So far, it's the only affordable method of high quality crystal growth for many semiconductor materials. Heterostructures developed from these make it possible to solve the considerably more general problem of controlling the fundamental parameters inside the semiconductor crystals and devices. Moreover, as one newly arising study and application branch of epitaxy, selective area growth (SAG) is widely used to fabricate materials of different thicknesses and composition on different regions of a single wafer. All of these new and promising fields have caught the interests and attentions of all the researchers around the world. In this work, we will study the stress and strain analysis of epitaxy in nano-scale materials, in which we seek a methodology to bridge the gap between continuum mechanical models and incorporate surface excess energy effects, which can be obtained by molecular dynamical simulations. We will make a brief description of the elastic behavior of the bulk material, covering the concepts of stress, strain, elastic energy and especially, the elastic constants. After that, we explained in details about the definitions of surface/interface excess energy and their characteristic property tensors. For both elastic constants and surface excess energy, we will use molecular dynamic simulations to calculate them out, which is mainly about curve-fitting the parabola function between the total strain energy density and the strain. After this, we analyzed the stress and strain state in nanoisland during the selective area growth of epitaxy. When the nanoisland is relaxed, the lattice structure becomes equilibrated, which means the total strain energy of system need to be minimized. Compared to other researcher's work, our model is based on continuum mechanics but also adopts the outcome from MD simulations. By combining these microscopic informations and those macroscopic observable properties, such as bulk elastic constants, we can provide a novel way of analyzing the stress and strain profile in epitaxy. The most important idea behind this approach is that, whenever we can obtain the elastic constants and surface property tensors from MD simulations, we can follow the same methodology to analyse the stress and strain in any epitaxy process. This is the power of combining atomistic simulations and continuum method, which can take considerations of both the microscopic and macroscopic factors.

<p> A method for tlie dynamic analysis· of planar coupled shear walls subjected to ground motions is developed herein. The method is capable of application to nonuniform coupled shear walls resting on flexible foundations. The possibility-of development of yield hinges at the ends of the connecting beams is included in the analysis . Also P-& Effect is incorporated in the stiffness of the structure. </p> <p> The method is based on the transfer matrix technique in combination with the continuum method. A step-by-step integration approach is used in solving the equation of motion. The response to a number of earthquake records are obtained. The effect of the rotational ductility factor of connecting beams is studied. </p> / Thesis / Master of Engineering (MEngr)

This thesis is focused on electron microscopy which issue is discussed at the beginning of work. The main attention is dedicated to the Environmental electron microscope, especially the differentially pumped chamber, which the thesis deals with. There is a production of an experimental chamber for analysis of shock waves on going therefore main goal of this thesis was to analyze the flow pattern in this chamber. Using the Ansys Fluent program, simulations of the characteristic flow that arises from the pumping of the vacuum chambers namely the ultrasonic flow at low pressures on which the most suitable turbulent module was applied as well as the degree of discretization was performed. The final analysis of this flow pattern is primarily focused on the localization of the shock wave which experimental evidence is to be lodged by shadow optical method as a part of the new concept of the chamber. The basis for the simulation of the chamber was taken over by Dr. Danilatos, with which the results were compared.