The first part of this dissertation explores the chemistry of an inhibitor complexation with Cu. First, the Cu oxidation state of the complex was +1. Second, identified by differential RAIRS, one source of Cu(I) for the Cu(I)-inhibitor complex could be Cu(I) oxide. The characteristic Cu(I) oxide peak at 650 cm⁻¹ was observed to decrease after CVD coating process was applied. This led to a major hypothesis that in order for the reaction between Cu(I) oxide and the inhibitor to proceed, protons from the inhibitor and oxygen from Cu₂O are stabilized by reacting to form water. The applicability of the passivation nature of Cu(I)-inhibitor films was explored for Cu-Al wire-bonded devices in its ability to protect from Cu-Al peripheral galvanic corrosion and the galvanic corrosion of the Cu-Al intermetallic compounds in their roles for corrosion-induced liftoff. The second part of this work studied the effect of replacing Al bond pad with Cu on the corrosion induced liftoff of wire-bonds when exposed to low ppm levels of chloride contamination. Applying protective coating to the Cu pad surface before wire-bonding was found to suppress the thermally induced oxidation of Cu in air, helping to enable successful Cu-Cu direct wire-bonding. Compared to Cu-Al devices with passivation coating, which has a few wires liftoff with 6 hours, the Cu-Cu bonded devices survived much longer, over 40 days, with almost no liftoff observed. This demonstrates that removing the galvanic contact, the root cause of the corrosion induced failure, is a more robust and permanent solution to the corrosion experienced by these devices.