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Dopant incorporation, desorption and migration in MBE grown InP and Alâ†xGaâ†1â†-â†xAs/GaAsAiraksinen, Veli-Matti January 1987 (has links)
No description available.
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Growth of gallium nitride on silicon substrate using the interlayer growth techniqueAl-Tamimi, Mohammed A. January 2001 (has links)
Thesis (M.S.)--Ohio University, August, 2001. / Title from PDF t.p.
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Distribution and control of misfit dislocations in indium gallium arsenide layers grown on gallium arsenide substratesMacPherson, Glyn January 1995 (has links)
No description available.
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