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MOSFET CURRENT SOURCE GATE DRIVERS AND TOPOLOGIES FOR HIGH EFFICIENCY AND HIGH FREQUENCY VOLTAGE REGULATOR MODULESZHANG, ZHILIANG 23 April 2009 (has links)
With fast development of semiconductor industry, the transistors in microprocessors increase dramatically, which follows the Moore’s law. As a result, the operating voltages of the future microprocessors follow the trend of decreasing (sub 1V) while the demanding currents increase (higher than 100A). Furthermore, the high slew rates during the transient will reach 1200 A/us. All these impose a serious challenge on a Voltage Regulator (VR) or Voltage Regulator Module (VRM). In order to meet requirements of the next generation microprocessors, four new ideas are proposed in this thesis.
The first contribution is an accurate analytical loss model of a power MOSFET with a Current-Source Driver (CSD). The impact of the parasitic components is investigated. Based on the proposed loss model, a general method to optimize the CSD is presented. With the proposed optimization method, the CSD improves the efficiency from 79.4% using the conventional voltage source driver to 83.6% at 12V input, 1.5V/30A output and 1MHz.
The second contribution is a new continuous CSD for a synchronous buck converter. The proposed CSD is able to drive the control and Synchronous Rectifier (SR) MOSFETs independently with different drive currents enabling optimal design. At 12V input, 1.5 V/30A output and 1MHz, the proposed CSD improves the efficiency from 79.4% using a conventional voltage source driver to 83.9%.
The third contribution is a new discontinuous CSD. The most important advantage of the new CSD is the small inductance (typically, 20nH at 1MHz switching frequency). A hybrid gate drive scheme for a synchronous buck converter is also proposed. The idea of the hybrid gate driver scheme is to use the CSD to achieve switching loss reduction for the control MOSFET, while use the conventional voltage source driver for the SR. At 12V input, 1.3V/25A output and 1MHz, the proposed CSD improves the efficiency from 80.7% using the voltage source driver to 85.4%.
The final contribution is new self-driven zero-voltage-switching (ZVS) non-isolated full-bridge converters for 12V input VRM applications. The proposed converter achieves the duty cycle extension, ZVS operation and SRs gate energy recovery. At 12V input, 1.3V output and 1MHz, the proposed converter improves the efficiency from 80.7% using the buck converter to 83.6% at 50A. / Thesis (Ph.D, Electrical & Computer Engineering) -- Queen's University, 2009-04-23 08:59:12.699
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Topologies and Modelings of Novel Bipolar Gate Driver Techniques for Next-Generation High Frequency Voltage RegulatorsFU, Jizhen 30 July 2010 (has links)
As is predicted by Moore’s law, the transistors in microprocessors increase dramatically. In order to increase the power density of the microprocessors, the switching frequency of the Voltage Regulator (VR) is expected to increase to MHz level. However, the frequency dependent loss will increase proportionally. In order to meet requirements of the next-generation microprocessors, three new ideas are proposed in this thesis.
The first contribution is a new bipolar Current Source Driver (CSD) for high frequency power MOSFET. The proposed CSD alleviates the gate current diversion problem of the existing CSDs by clamping the gate voltage to a flexible negative value during turn off transition. Therefore, the proposed driver turns off the MOSFET much faster. For buck converters with 12 V input at 1MHz switching frequency, the proposed driver improves the efficiency from 80.5% using the existing CSD to 82.5% at 1.2V/30A, and at 1.3V/30A output, from 82.5% to 83.9%.
The second contribution is an accurate analytical loss model of a power MOSFET with a CSD. The current diversion problem that commonly exists in CSDs is investigated mathematically. The inductor value of the CSD is optimized to achieve minimum loss for the synchronous buck converter. The experimentally measured loss matches the calculated loss very well. The efficiency with the optimal CSD inductor is improved from 86.1% to 87.6% at 12V input, 1.3V/20A output in 1MHz switching frequency and from 82.4% to 84.0% at 1.3V/30A output.
The third contribution is a new inductorless bipolar gate driver for control FET of buck converters. The most important advantage of the driver presented in this thesis is that it can turn off the power MOSFETs with a negative voltage, which will significantly reduce the turn off time and thus switching loss. In addition, the proposed bipolar gate driver has no inductor in the driver circuit; therefore it can be fully integrated into a chip. For buck converter with 5V input, 1.3V/25A load, in 2 MHz frequency, the proposed gate driver increases the efficiency from 75.8% to 77.8% and from 72.9% to 76.5% at 5V input, 1.3V/25A load, in 2.5 MHz switching frequency. / Thesis (Master, Electrical & Computer Engineering) -- Queen's University, 2010-07-30 14:06:04.003
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Analýza vlastností spínaných LED budičů / Analysis of switched-mode LED driversStehlík, Ota January 2015 (has links)
The aim of this thesis is to design, produce and verify the operation of two different LED drivers for automotive industry, which controls the ultra-bright white LEDs. At the beginning of a brief introduction explaining the principle of operation of LEDs. Furthermore theory describes the functions of all three basic drivers involved as buck, boost and buck-boost. Based on the requirements are selected ICs suitable for this implementation, theoretically described their block diagrams including the individual diagrams and eventually these samples are made, revived and measured their parameters.
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