Three LiAlO2 single crystals were grown by the conventional Czochralski method under the ambient pressure with pull rate with 2.0~3.0 mm/min, rotation rate with 20~30 rpm, and at a certain growth temperature with a home-made furnace. The total lengths of the the LiAlO2 bulks are between 13.3~20 cm, including its cone and the root. The relation between the configuration of LiAlO2 bulk and the ways of the heat transport on the Czochralski method was addressed. In order to identify the inversion properties of the LiAlO2 specimen, 90¢XC water was utilized to etch both sides of the LAO specimen, (100) and (-100) surfaces, and we analyzed them with an optical microscopy (OM). The experimental results showed that there are certain different etching characteristics on the both sides of the specimen. The density of etch pits revealed 1.4~2.8 ¡Ñ 104 cm-2 on the (-100) surface, and no phase transition had been found in the specimen which was annealed for 24 hours at 800¢J.

The method of coating near-ultraviolet light with phosphor powders is one of the main trends in the current development of white light-emitting diodes (LEDs). It a long time for the development of Ce3+ doped phosphor materials. The Ce3+ has one outer 4f1 electron. And this electron can be excited to 5d. The luminescence wavelength of Ce3+ doped phosphor materials different from the different host lattice. First part of this paper is about the growth of cerium doped LiGaO2 crystal by conventional Czochralski melt pulling method. The dose of cerium is 0.2ppm. The growth were operated in the ambient pressure, with the pull rate of 2.0 mm/hour and the rotation rate of 10~20 RPM. LiGaO2 crystal of 200 mm in length was grown under these conditions. We found a yellow to green peak on 505 nm from the measurement of photoluminescence spectra. It showed that LiGaO2 can emit phosphorescence by the doped of cerium. Second part of this paper is growth of Gallium nitride (GaN) thin films. GaN possess vast application potential in the fields of optoelectronics and microelectronics for its wide band gap, high thermal stability and high chemistry stability. GaN mostly grow on large lattice mismatch substrates, for the difficulty growth of GaN bulk single crystal and scarce of lattice match heteroepitaxial substrates. This result in great dislocation defects density in the GaN films. To lower the dislocation density of GaN films and improve the crystal quality is an important point of GaN research fields. In this study, the GaN thin films were grown on £^-LiAlO2(100) substrates by Chemical Vapor Deposition(CVD). We found that the growth direction and structure of GaN were influenced by growth parameter. The GaN¡]10-10¡^ thin films were grown by the adjust of growth temperature and pressure.

Este trabalho descreve a construção e operação de dois fornos especiais para crescimento de monocristais pelas técnicas de Bridgmann e Czochralski. Vários cristais de LiF puros e dopados foram crescidos nesses fornos e suas propriedades testadas. O forno para crescimento pela técnica de Bridgmann pode operar até 1800&#176C em atmosferas agressivas não oxidantes (por exemplo HF seco). Com esses fornos podem ser crescidos monocristais de MnF2 e PbF2. O forno para crescimento pela técnica de Czochralski permite a preparação de monocristais de Nitreto de Litio (Li3N) partindo do Lítio metálico e de Nitrogênio gasoso sob pressão. Os fornos e sua operação são descritos em detalhes permitindo sua reprodução. / This work describes the construction and operation of two special furnaces for crystal growth using Bridgmann and Czochralski techniques. Several LiF single crystals, pure and doped, were grown in these furnaces and their properties tested. The Bridgmann furnace allows operation at temperatures as high as 1800&#176C and no-oxidational agressive growing conditions (dry HF gas for example). In this furnace it is possible to grow MnF2 and PbF2 single crystals. The Czochralski furnace allows the growth of Li3N starting from Li metal and gaseons N2 under pressure. The furnaces and their operation are described in details allowing their reproduction.

Este trabalho descreve a construção e operação de dois fornos especiais para crescimento de monocristais pelas técnicas de Bridgmann e Czochralski. Vários cristais de LiF puros e dopados foram crescidos nesses fornos e suas propriedades testadas. O forno para crescimento pela técnica de Bridgmann pode operar até 1800&#176C em atmosferas agressivas não oxidantes (por exemplo HF seco). Com esses fornos podem ser crescidos monocristais de MnF2 e PbF2. O forno para crescimento pela técnica de Czochralski permite a preparação de monocristais de Nitreto de Litio (Li3N) partindo do Lítio metálico e de Nitrogênio gasoso sob pressão. Os fornos e sua operação são descritos em detalhes permitindo sua reprodução. / This work describes the construction and operation of two special furnaces for crystal growth using Bridgmann and Czochralski techniques. Several LiF single crystals, pure and doped, were grown in these furnaces and their properties tested. The Bridgmann furnace allows operation at temperatures as high as 1800&#176C and no-oxidational agressive growing conditions (dry HF gas for example). In this furnace it is possible to grow MnF2 and PbF2 single crystals. The Czochralski furnace allows the growth of Li3N starting from Li metal and gaseons N2 under pressure. The furnaces and their operation are described in details allowing their reproduction.

Muitos trabalhos científicos têm sido publicados relatando os diferentes métodos de preparação e as propriedades de corpos cerâmicos e filmes finos de niobato de bismuto (BiNbO4 - BN). Provido de características como alta permissividade dielétrica e excelentes propriedades ferroelétricas, esse composto tem despertado o interesse da comunidade científica. No entanto, uma literatura restrita e conflitante é encontrada sobre esse composto na forma de monocristais. A ocorrência de transições de fase estrutural mostrou-se a maior dificuldade na preparação desses compostos como monocristais. A potencial aplicação como material de dispositivos eletrônicos, devido suas propriedades ferroelétricas, assim como o desafio da preparação de materiais que apresentam transição estrutural de fase, serviram de motivação para a realização desse estudo. O objetivo desse trabalho foi a realização do estudo da síntese e do crescimento de cristais de BiNbO4. Para isso foram utilizadas as técnicas de Czochralski (CZ), Laser Heated Pedestal Growth (LHPG) e fluxo. As dificuldades encontradas quando utilizada cada uma das técnicas, assim como suas variações, foram discutidas. A transição estrutural de fase (\'alfa\'-BiNbO4 - \'beta\'-BiNbO4) mostrou-se uma barreira na preparação desse tipo de material com qualidade óptica. O comportamento da permissividade dielétrica (\'épsilon\') e fator de perda (tg\'teta\') em função da temperatura e freqüência foram determinados através de estudos de espectroscopia de impedância. / Many scientific works have been published reporting different procedures to the preparation and properties of ceramic bodies and thin films of bismuth niobate (BiNbO4 - BN). Characterized by high dielectric permittivity and excellent ferroelectric properties, this compound has attracted the interest of the scientific community. However, a restricted and conflict literature is found about this compound in the single crystal form. The appearance of structure phase transitions was demonstrated in the most difficulty for the preparation of this compounds as single crystals. The potential applications as electronic device material, due its ferroelectrics properties, as well as the challenge to preparation materials which indicate structural transition were used as motivations to the development of this work. The main purposes of this work were to make synthesis and the crystal growth of BiNbO4. For this propose, techniques as Czochralski (CZ), Laser Heated Pedestal Growth (LHPG) and self-flux were used. The difficulties found when used each one of the techniques and their variations are discussed. The structural phase transition (\'alfa\'-BiNbO4 - \'beta\'-BiNbO4) was the principal barrier in the preparation of this material with optical quality. The behavior of dielectric permittivity (\'épsilon\' ) and lost factor (tg\' teta\') by the temperature and frequency were determined through studies of Impedance Spectroscopy

Muitos trabalhos científicos têm sido publicados relatando os diferentes métodos de preparação e as propriedades de corpos cerâmicos e filmes finos de niobato de bismuto (BiNbO4 - BN). Provido de características como alta permissividade dielétrica e excelentes propriedades ferroelétricas, esse composto tem despertado o interesse da comunidade científica. No entanto, uma literatura restrita e conflitante é encontrada sobre esse composto na forma de monocristais. A ocorrência de transições de fase estrutural mostrou-se a maior dificuldade na preparação desses compostos como monocristais. A potencial aplicação como material de dispositivos eletrônicos, devido suas propriedades ferroelétricas, assim como o desafio da preparação de materiais que apresentam transição estrutural de fase, serviram de motivação para a realização desse estudo. O objetivo desse trabalho foi a realização do estudo da síntese e do crescimento de cristais de BiNbO4. Para isso foram utilizadas as técnicas de Czochralski (CZ), Laser Heated Pedestal Growth (LHPG) e fluxo. As dificuldades encontradas quando utilizada cada uma das técnicas, assim como suas variações, foram discutidas. A transição estrutural de fase (\'alfa\'-BiNbO4 - \'beta\'-BiNbO4) mostrou-se uma barreira na preparação desse tipo de material com qualidade óptica. O comportamento da permissividade dielétrica (\'épsilon\') e fator de perda (tg\'teta\') em função da temperatura e freqüência foram determinados através de estudos de espectroscopia de impedância. / Many scientific works have been published reporting different procedures to the preparation and properties of ceramic bodies and thin films of bismuth niobate (BiNbO4 - BN). Characterized by high dielectric permittivity and excellent ferroelectric properties, this compound has attracted the interest of the scientific community. However, a restricted and conflict literature is found about this compound in the single crystal form. The appearance of structure phase transitions was demonstrated in the most difficulty for the preparation of this compounds as single crystals. The potential applications as electronic device material, due its ferroelectrics properties, as well as the challenge to preparation materials which indicate structural transition were used as motivations to the development of this work. The main purposes of this work were to make synthesis and the crystal growth of BiNbO4. For this propose, techniques as Czochralski (CZ), Laser Heated Pedestal Growth (LHPG) and self-flux were used. The difficulties found when used each one of the techniques and their variations are discussed. The structural phase transition (\'alfa\'-BiNbO4 - \'beta\'-BiNbO4) was the principal barrier in the preparation of this material with optical quality. The behavior of dielectric permittivity (\'épsilon\' ) and lost factor (tg\' teta\') by the temperature and frequency were determined through studies of Impedance Spectroscopy

Low voltage power electronics are made from dislocation free silicon heavily doped with arsenic or antimony to provide low electrical resistivity. Attempts to grow crystals with decreased resistivity have led to a higher probability of twinning during growth, so that the crystal no longer possesses the required crystallographic orientation for device fabrication. The source of the twins must be identified so that crystal growth process conditions can be designed to eliminate this defect mechanism, allowing lower resistivity crystals to be grown reliably. In lightly doped crystals, twinning was ascribed to presence of carbon impurity or a low probability atomic stacking accident, neither of which should be affected by increased concentration of arsenic or antimony. Crystals that twinned during growth were characterized by resistivity, Laue back-reflection x-ray diffraction, optical and scanning electron microscopy, energy dispersive x-ray spectroscopy, spreading resistance, x-ray computed tomography and electron backscatter diffraction. The twin nucleation site of silicon crystals that were grown heavily doped with arsenic or antimony were compared to lightly doped crystals which twinned, and crystals that exhibited other defects. The initial twinning in the <100> orientation heavily doped crystals occurred from small gas bubbles bursting at a {111} facet at the three phase boundary, and forming a twin orientation domain on that facet. The gas bubbles likely consist of argon, the process gas used during solidification to remove silicon monoxide gas from the growth system. The higher levels of arsenic or antimony dopant may have changed the silicon surface tension, or provided additional impurities into the liquid silicon. Either effect may have changed the number or size of argon bubbles in the liquid silicon, leading to a higher incidence of gas bubbles near the {111} facet during solidification. Similar but smaller crater features were observed on two lightly boron-doped silicon crystals that twinned. Two other lightly doped crystals formed twins from carbon inclusions, consistent with carbon as a cause. Some heavily-doped twinned samples also show high concentrations of metals at the twin nucleation site, which could affect surface energy. Measurement of the geometry of crystal surface-to-facet radius eliminated a recently-proposed twin nucleation theory from consideration. Constitutional supercooling was demonstrated to not be a major contributing factor to twin nucleation. It was shown that deliberately introducing additional arsenic dopant during solidification would nucleate twins, but twins did not occur if only elemental carbon was introduced.

Univ., Diss.--Magdeburg, 1996.

A study of the martensitic phase transition in the shape memory alloy Ni2MnGa has been carried out. Ni2MnGa is one of the group of "shape memory effect" alloys which are currently exciting considerable interest. The origin of this effect in the compound is in the phase change which takes place on cooling through T = 200 K from the cubic L21 Heusler structure to a tetragonal phase. Recently the results of band structure calculations have been used to conclude that in Ni2MnGa the structural phase transition is driven by a band Jahn-Teller distortion.

Visando compreender os fluxos na fase líquida do crescimento de silício pelo método Czochralski, é feita a Simulação Numérica do silício fundido, resolvendo-se as equações que governam o fenômeno da convecção forçada no fluido: Balanço de Quantidade de Movimento e Balanço de Massa. A técnica numérica escolhida é a de Elementos Finitos, onde é utilizada a formulação de Galerkin, com aproximações quadráticas nas componentes da velocidade e linear na pressão. A partir de várias combinações de rotações cadinho-cristal, os perfis de velocidade obtidos são analisados com relação aos efeitos de incorporação de impurezas e/ou dopantes no cristal em crescimento. / In order to visualise the flow conditions during crystal growth of Silicon by the Czochralski technique, a numerical simulation is done. It is used the Finite Element Method with the Galerkin Formulation , and with quadratic approximations on the components of the velocity and linear approximations on the pressure. Many combinations of crystal and crucible rotations are analised and discussed considering optimal growth conditions.