Electrostatic Assisted Vapor Deposition method was adopted to deposit SnO2 thin films in this work using either SnCl4 or DBTDC (C12H24O4Sn) as precursors. Appropriate deposition parameters were identified for deposition of porous and dense films . A post-deposition calcination of 600¢XC/2h yielded well crystalline rutile phase. Electrical resistance measurement indicated that the most porous films ,derived from the precursor solution of ethanol solvent, were not continuous. Instead, films derived from precursor solution of mixed ethanol-carbitol solvent were less porous allowing stable resistance values to be measured. A detection sensitivity of 2.55 for 100ppm CO gas was obtained from films derived from a 30% ethanol-70% carbitol solution. A higher sensitivity of 6.55 was obtained from films derived from solutions containing Di-n-butyltin diacetate (DBTDC) as precursor.