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  • About
  • The Global ETD Search service is a free service for researchers to find electronic theses and dissertations. This service is provided by the Networked Digital Library of Theses and Dissertations.
    Our metadata is collected from universities around the world. If you manage a university/consortium/country archive and want to be added, details can be found on the NDLTD website.
1

Materials for DRAM Memory Cell Applications

Schroeder, Uwe, Cho, Kyuho, Slesazeck, Stefan 06 May 2022 (has links)
Semiconductor memory is one of the key technologies driving the success of Si-based information technology within the last five decades. The most prominent representative memory type, the dynamic random access memory(DRAM)was patented in 1967 and was introduced into the market by Intel Corporation in 1972. Until the year 2001 and the realization of the 110 nm technology node, DRAM was the driving force on the lithography shrink roadmap, before NAND FLASH took over that role. Hence, the development of the DRAM technology was long time the forerunner for the exponentially growing large-scale integration and promoted similar advances in logic chips. One of the reasons of the success of the DRAM is its simple cell structure, which consists of only one transistor (1T) and one capacitor (1C), where the information is stored in form of a charge.

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