Yes / A compact dielectric resonator antenna (DRA) for wideband applications is proposed. Two cylindrical dielectric resonators which are asymmetrically located with respect to the center of a rectangular coupling aperture are fed through this aperture. By optimizing the design parameters, an impedance bandwidth of about 29%, covering the frequency range from 9.62 GHz to 12.9 GHz, and a gain of 8 dBi are obtained. Design details of the proposed antenna and the results of both simulation and experiment are presented and discussed.

No / A small dielectric resonator antenna has been designed for ultra wideband (UWB) communication system applications. The antenna element is a rectangular low permittivity ceramic block, with a dielectric constant of 9.4, and the modified T-shaped feed network includes a 50 ohm microstrip line to achieve strong coupling, and some bandwidth enhancement. The antenna performance is simulated and measured over a frequency band extending from 3100 MHz to 5500 MHz; the impedance bandwidth over this interval is 55.8% with VSWR <; 2, making the antenna suitable for UWB applications.

Materiais dielétricos para operação em microondas constituem um ponto importante para usos em sistemas de comunicação móvel/via satélite, incluindo sistemas de monitoramento terrestres, internet/telefonia para celulares, internet das coisas, além do interesse militar para elaboração de radares. Avanços importantes nesse setor tecnológico só foram outorgados, graças ao emprego ostensivo de ressoadores dielétricos (RDs). Esses dispositivos constituem cerâmicas óxidas com baixa perda dielétrica em microondas, com demanda para sua miniaturização. O sistema deverá possuir alta constante dielétrica nesse intervalo e o dispositivo deve ser termicamente estável, ou seja, suas propriedades dielétricas não se alterarão com a temperatura. A busca por materiais de alto desempenho resultou na descoberta das perovskitas ordenadas 1:1 e 1:2, com estequiometria A2BBO6 e A3BB2O9, respectivamente. Tais sistemas ordenam o sítio B, da perovskita ABO3, gerando o empilhamento dos planos cristalinos com B e B, intercalados e na direção [1 1 1]c. Os resultados da literatura mostram que o ordenamento possui papel fundamental na obtenção de ressoadores de baixa perda dielétrica. Ademais, poucos estudos reportam as propriedades dos sistemas contendo os cátions Ca e Nb, no sítio B. Portanto, essa tese dedicou-se à investigação das propriedades dielétricas do sistema Ba3CaNb2O9 e, posteriormente, a modificação desse com a substituição dos cátions Ba2+ por Sr2+ e La3+. As amostras foram preparadas pelo método de reação do estado sólido e, posteriormente, caracterizadas pela difração de raios X, espalhamento Raman, espectroscopia de impedância e desempenho em microondas, além de técnicas complementares como análise térmica, densidade por imersão e microscopia eletrônica de varredura. Os resultados demonstraram a coexistência dos domínios 1:1 e 1:2 no sistema Ba3CaNb2O9, sendo possível manipulá-los mediante condições da sinterização. Microestruturalmente, esses domínios são regiões no cristalito com diferentes ordens catiônicas e, assim, com propriedades cristalográficas e vibracionais diferentes. Pela impedância, notou-se que o ressoador Ba3CaNb2O9 tende a conduzir mais quando possui uma tendência para o domínio 1:1. Tal resultado foi confirmado em microondas, onde a redução da perda dielétrica foi correlacionada à diminuição do domínio 1:1 na estrutura cristalina dos ressoadores. Na solução sólida com Sr2+, uma transição da fase trigonal D3d3 para monoclínica C2h3 foi detectada nos pós-calcinados, sendo oriunda das inclinações octaédricas do sistema de Glazer a0b-b-. As cerâmicas desse sistema foram sinterizadas a 1500 &deg;C por 26 h, cujo resultado ilustrou uma tendência à ordem 1:1 para x &ge; 0,30. No sistema com La3+, observou-se, além da coexistência, os monodomínios 1:1 e 1:2. O sistema com monodomínios 1:1, BaLaCaNbO6 (y = 0,50), evidenciou uma distorção monoclínica intrínseca. Esta distorção foi associada às inclinações octaédricas do sistema de Glazer a0b-b-, reduzindo a simetria da fase cúbica Oh5 para monoclínica C2h3. Por fim, o desempenho como ressoador dielétrico dos sistemas BaLaCaNbO6 e Ba3CaNb2O9 foi avaliado. O primeiro sistema mostrou os seguintes valores: permissividade relativa &epsilon;g &#8764; 26, Qu &times; fR &#8764; 10.506 GHz e coeficiente &#964;f &#8764; -55 ppm.K-1. O segundo sistema revelou os dados: permissividade &epsilon;g &#8764; 43, Qu &times; fR &#8764; 15.752 GHz e o coeficiente &#964;f &#8764; 278 ppm.K-1. / Dielectric materials for microwave applications play an important role in mobile and satellite communication systems, including terrestrial monitoring, internet/mobile devices, internet of things, as well as the military uses as the radar developments. Advances in this technological field were only possible due to the ostensive use of dielectric resonators (DRs). These devices constitute oxide ceramics with a low dielectric loss in microwave frequency. The system must have high dielectric constant and such a device must be thermally stable. The search for highperformance materials granted the discovery of 1:1 and 1:2 ordered perovskites, with general formula A2BBO6 and A3BB2O9, respectively. These systems depict the B-site ordering of ABO3 perovskite, inducing the crystalline planes stacking in the [1 1 1]c direction. The literature results showed that the ordering plays an essential role in the low loss ceramics. Moreover, few studies reported the features of the systems containing the Ca and Nb cations at the B-site. Therefore, our work drives the dielectric properties of the Ba3CaNb2O9 system and, then, the modification induced by Ba2+ substitution by Sr2+ and La3+. The samples were prepared by the conventional solid-state reaction method and probed by X-ray diffraction, Raman scattering, impedance spectroscopy and microwave performance, as well as other techniques such as thermal analysis, density measurement, and electron microscopy. Our findings elucidated the coexistence of 1:1 and 1:2 domains in Ba3CaNb2O9 ceramics, being possible to manipulate them by sintering conditions. Such an ordered domain denotes regions in the crystallites with different cationic order and with different crystallographic and vibrational behavior. By the impedance spectroscopy, it was observed that Ba3CaNb2O9 ceramics tend to conduct more when they present a tendency towards the 1:1 domains. The earlier result was also confirmed in microwave frequency, in which the dielectric loss decreasing was correlated to the decrease of the 1:1 domain in the crystal structure. In the strontium solid solution, a transition from the D3d3 trigonal phase to the C2h3 monoclinic one was noted in powder samples, being derived from octahedral tilting (a0b-b- Glazer system). In the lanthanum system, besides the coexistence, the monodomains 1:1 and 1:2 were observed. Otherwise, the 1:1 monodomain system, BaLaCaNbO6 (y = 0.50), exhibited an intrinsic monoclinic distortion. This distortion was ascribed to the octahedral tilting (a0b-b- Glazer system), lowering the crystal symmetry from Oh5 cubic phase to the C2h3 monoclinic phase. The dielectric resonator performances of the BaLaCaNbO6 and Ba3CaNb2O9 systems were evaluated. The first system showed the following values: permittivity &epsilon;g &#8764; 26, Qu &times; fR &#8764; 10.506 GHz and coefficient &#964;f &#8764; -55 ppm.K-1. The second system exhibited the data: permittivity &epsilon;g &#8764; 43, Qu &times; fR &#8764; 15.752 GHz and coefficient &#964;f &#8764; 278 ppm.K-1.

FundaÃÃo Cearense de Apoio ao Desenvolvimento Cientifico e TecnolÃgico / CoordenaÃÃo de AperfeiÃoamento de Pessoal de NÃvel Superior / O progresso da indÃstria de telecomunicaÃÃes depende da fabricaÃÃo em larga escala de circuitos de baixo custo, alto desempenho elÃtrico, confiabilidade e passividade de miniaturizaÃÃo. Estas caracterÃsticas sÃo necessÃrias para garantir que os sinais transmitidos sejam confinados a uma freqÃÃncia bem definida, evitando assim sinais que possam interferir no desempenho satisfatÃrio de sistemas de telecomunicaÃÃes. As cerÃmicas dielÃtricas fornecem vantagens significantes em termos de compactaÃÃo, peso, estabilidade tÃrmica e custos de produÃÃo em dispositivos de micro-ondas, alÃm de possuir uma grande facilidade de integraÃÃo com outros circuitos integrados de microondas. Este trabalho consiste no desenvolvimento e caracterizaÃÃo de um novo tipo de material cerÃmico para ser utilizado como uma antena miniatura para aplicaÃÃes em Bluetooth (2.4 GHz). O trabalho està dividido em trÃs etapas. A primeira consiste em desenvolver um novo material que possua constante dielÃtrica (25 < Âr < 50), um alto fator de qualidade (Q > 5000) e um coeficiente de temperatura da freqÃÃncia de ressonÃncia (Âf ) prÃximo de zero. A segunda consiste em caracterizar o material desenvolvido atravÃs de DifraÃÃo de Raios-X e Espectroscopias Raman, Infra-vermelho e DielÃtrica. A Ãltima etapa consiste em fabricar e simular a antena feita com o material desenvolvido, comparando o desempenho teÃrico com o prÃtico. / The progress of telecommunication industry is highly dependent of the fabrication of low cost, quality factor and smaller size of the individual components for commercial applications. This kind of characteristics are necessary to warranty that the signal have well suited frequency, avoiding the noise interference signals, that could affect the performance of the telecommunication systems. Dielectric ceramics have significant advantages of light weight, low cost, small size, low profile, high radiation eficiency, low production cost and ease of integration with other active or passive microwave integrated circuit. This work will provide a new ceramic material that could be used in a miniature antenna for Bluetooth applications. This work is divided in three stages. The first one is develop a new material with a good dielectric permittivity (25 < Âr < 50), high quality factor (Q > 5000) and low temperature coeficient of resonant frequency (Âf ). The second one characterize the developed material by XDR, Raman, Infrared and dielectric spectroscopy in microwave region. The last one is build and simulate the antenna made with the developed dielectric material.

With the increasing demand for high performance communication networks and the proliferation of mobile devices, significant advances in antenna design are essential. In recent years the rising demands of the mobile wireless communication industry have forced antennas to have increased performance while being limited to an ever decreasing footprint. Such design constraints have forced antenna designers to consider frequency agile antennas so that their behavior can adapt with changing system requirements or environmental conditions. Frequency agile antennas used for mobile handset applications must also be inexpensive, robust, and make use of electronic switching with reasonable DC power consumption. Previous works have addressed a number of these requirements but relatively little work has been performed on frequency agile dielectric resonator antennas (DRAs). The objective of this thesis is to investigate the use of DRAs for frequency reconfigurability. DRAs are an attractive option due to their compactness, very low losses leading to high radiation efficiencies (better than 95%) and fairly wide bandwidths compared to alternatives. DRA’s are also well suited for mobile communications since they can be placed on a ground plane and are by nature low gain antennas whose radiation patterns typically resemble those of short electric or magnetic dipoles. One way to electronically reconfigure a DRA, in the sense of altering the frequency band over which the input reflection coefficient of the antenna is below some threshold, is to partially load one face of the DRA with a conducting surface. By altering the way in which this surface connects to the groundplane on which the DRA is mounted, the DRA can be reconfigured due to changes in its mode structure. This connection was first made using several conducting tabs which resulted in a tuning range of 69% while having poor cross polarization performance. In order to address the poor cross polarization performance a second conducting surface was placed on the opposing DRA wall. This technique significantly reduced the cross polarization levels while obtaining a tuning range of 83%. The dual-wall conductively loaded DRA was then extended to include a full electronic implementation using PIN diodes and varactor diodes in order to achieve discrete and continuous tuning respectively. The two techniques both achieved discrete tuning ranges of 95% while the varactor implementation also had a continuous tuning range of 59% while both maintaining an acceptable cross polarization level.

With the increasing demand for high performance communication networks and the proliferation of mobile devices, significant advances in antenna design are essential. In recent years the rising demands of the mobile wireless communication industry have forced antennas to have increased performance while being limited to an ever decreasing footprint. Such design constraints have forced antenna designers to consider frequency agile antennas so that their behavior can adapt with changing system requirements or environmental conditions. Frequency agile antennas used for mobile handset applications must also be inexpensive, robust, and make use of electronic switching with reasonable DC power consumption. Previous works have addressed a number of these requirements but relatively little work has been performed on frequency agile dielectric resonator antennas (DRAs). The objective of this thesis is to investigate the use of DRAs for frequency reconfigurability. DRAs are an attractive option due to their compactness, very low losses leading to high radiation efficiencies (better than 95%) and fairly wide bandwidths compared to alternatives. DRA’s are also well suited for mobile communications since they can be placed on a ground plane and are by nature low gain antennas whose radiation patterns typically resemble those of short electric or magnetic dipoles. One way to electronically reconfigure a DRA, in the sense of altering the frequency band over which the input reflection coefficient of the antenna is below some threshold, is to partially load one face of the DRA with a conducting surface. By altering the way in which this surface connects to the groundplane on which the DRA is mounted, the DRA can be reconfigured due to changes in its mode structure. This connection was first made using several conducting tabs which resulted in a tuning range of 69% while having poor cross polarization performance. In order to address the poor cross polarization performance a second conducting surface was placed on the opposing DRA wall. This technique significantly reduced the cross polarization levels while obtaining a tuning range of 83%. The dual-wall conductively loaded DRA was then extended to include a full electronic implementation using PIN diodes and varactor diodes in order to achieve discrete and continuous tuning respectively. The two techniques both achieved discrete tuning ranges of 95% while the varactor implementation also had a continuous tuning range of 59% while both maintaining an acceptable cross polarization level.

Ever growing demands for higher data rate and bandwidth are pushing extremely high data rate wireless applications to millimeter-wave band (30-300GHz), where sufficient bandwidth is available and high data rate wireless can be achieved without using complex modulation schemes. In addition to the communication applications, millimeter-wave band has enabled novel short range and long range radar sensors for automotive as well as high resolution imaging systems for medical and security. Small size, high gain antennas, unlicensed and worldwide availability of released bands for communication and a number of other applications are other advantages of the millimeter-wave band. The major obstacle for the wide deployment of commercial wireless and radar systems in this frequency range is the high cost and bulky nature of existing GaAs- and InP-based solutions. In recent years, with the rapid scaling and development of the silicon-based integrated circuit technologies such as CMOS and SiGe, low cost technologies have shown acceptable millimeter-wave performance, which can enable highly integrated millimeter-wave radio devices and reduce the cost significantly. Furthermore, at this range of frequencies, on-chip antenna becomes feasible and can be considered as an attractive solution that can further reduce the cost and complexity of the radio package. The propagation channel challenges for the realization of low cost and reliable silicon-based communication devices at millimeter-wave band are severe path loss as well as shadowing loss of human body. Silicon technology challenges are low-Q passive components, low breakdown voltage of active devices, and low efficiency of on-chip antennas. The main objective of this thesis is to investigate and to develop antenna and front-end for cost-effective silicon based millimeter-wave phased array radio architectures that can address above challenges for short range, high data rate wireless communication as well as radar applications. Although the proposed concepts and the results obtained in this research are general, as an important example, the application focus in this research is placed on the radio aspects of emerging 60 GHz communication system. For this particular but extremely important case, various aspects of the technology including standard, architecture, antenna options and indoor propagation channel at presence of a human body are studied. On-chip dielectric resonator antenna as a radiation efficiency improvement technique for an on-chip antenna on low resistivity silicon is presented, developed and proved by measurement. Radiation efficiency of about 50% was measured which is a significant improvement in the radiation efficiency of on-chip antennas. Also as a further step, integration of the proposed high efficiency antenna with an amplifier in transmit and receive configurations at 30 GHz is successfully demonstrated. For the implementation of a low cost millimeter-wave array antenna, miniaturized, and efficient antenna structures in a new integrated passive device technology using high resistivity silicon are designed and developed. Front-end circuit blocks such as variable gain LNA, continuous passive and active phase shifters are investigated, designed and developed for a 60GHz phased array radio in CMOS technology. Finally, two-element CMOS phased array front-ends based on passive and active phase shifting architectures are proposed, developed and compared.

Ever-increasing interest in millimeter-wave and terahertz spectrum has prompted research and development of novel passive components working at these frequencies. Compared with the conventional planar components, non-planar dielectric devices become more attractive as frequencies increase due to their higher quality factors and dimensional tolerances. In this thesis, we present fast methods to analyze the millimeter-wave dielectric resonator and rod antenna. First, an analytical method has been developed to evaluate resonant frequencies, quality factors of the Whispering Gallery Mode (WGM) disk resonators and also the resonator-waveguide coupling. A numerical solver based on full-wave finite element method is implemented to verify the analytical result. This analytical model provides a solution for fast design and optimization of WGM resonators in filter and sensor applications. Secondly, a fast analytical approach based on local mode theory is introduced to calculate the radiation from tapered dielectric rod antenna. This efficient approximate model consumes much less computing resources and time, and demonstrates good agreements with full-wave numerical results. It supplies a quantitative way to understand the radiation mechanism and interaction between different parts of the antenna. Based on this, design criteria for the taper profile of rod antennas are given.

Ever-increasing interest in millimeter-wave and terahertz spectrum has prompted research and development of novel passive components working at these frequencies. Compared with the conventional planar components, non-planar dielectric devices become more attractive as frequencies increase due to their higher quality factors and dimensional tolerances. In this thesis, we present fast methods to analyze the millimeter-wave dielectric resonator and rod antenna. First, an analytical method has been developed to evaluate resonant frequencies, quality factors of the Whispering Gallery Mode (WGM) disk resonators and also the resonator-waveguide coupling. A numerical solver based on full-wave finite element method is implemented to verify the analytical result. This analytical model provides a solution for fast design and optimization of WGM resonators in filter and sensor applications. Secondly, a fast analytical approach based on local mode theory is introduced to calculate the radiation from tapered dielectric rod antenna. This efficient approximate model consumes much less computing resources and time, and demonstrates good agreements with full-wave numerical results. It supplies a quantitative way to understand the radiation mechanism and interaction between different parts of the antenna. Based on this, design criteria for the taper profile of rod antennas are given.

Ever growing demands for higher data rate and bandwidth are pushing extremely high data rate wireless applications to millimeter-wave band (30-300GHz), where sufficient bandwidth is available and high data rate wireless can be achieved without using complex modulation schemes. In addition to the communication applications, millimeter-wave band has enabled novel short range and long range radar sensors for automotive as well as high resolution imaging systems for medical and security. Small size, high gain antennas, unlicensed and worldwide availability of released bands for communication and a number of other applications are other advantages of the millimeter-wave band. The major obstacle for the wide deployment of commercial wireless and radar systems in this frequency range is the high cost and bulky nature of existing GaAs- and InP-based solutions. In recent years, with the rapid scaling and development of the silicon-based integrated circuit technologies such as CMOS and SiGe, low cost technologies have shown acceptable millimeter-wave performance, which can enable highly integrated millimeter-wave radio devices and reduce the cost significantly. Furthermore, at this range of frequencies, on-chip antenna becomes feasible and can be considered as an attractive solution that can further reduce the cost and complexity of the radio package. The propagation channel challenges for the realization of low cost and reliable silicon-based communication devices at millimeter-wave band are severe path loss as well as shadowing loss of human body. Silicon technology challenges are low-Q passive components, low breakdown voltage of active devices, and low efficiency of on-chip antennas. The main objective of this thesis is to investigate and to develop antenna and front-end for cost-effective silicon based millimeter-wave phased array radio architectures that can address above challenges for short range, high data rate wireless communication as well as radar applications. Although the proposed concepts and the results obtained in this research are general, as an important example, the application focus in this research is placed on the radio aspects of emerging 60 GHz communication system. For this particular but extremely important case, various aspects of the technology including standard, architecture, antenna options and indoor propagation channel at presence of a human body are studied. On-chip dielectric resonator antenna as a radiation efficiency improvement technique for an on-chip antenna on low resistivity silicon is presented, developed and proved by measurement. Radiation efficiency of about 50% was measured which is a significant improvement in the radiation efficiency of on-chip antennas. Also as a further step, integration of the proposed high efficiency antenna with an amplifier in transmit and receive configurations at 30 GHz is successfully demonstrated. For the implementation of a low cost millimeter-wave array antenna, miniaturized, and efficient antenna structures in a new integrated passive device technology using high resistivity silicon are designed and developed. Front-end circuit blocks such as variable gain LNA, continuous passive and active phase shifters are investigated, designed and developed for a 60GHz phased array radio in CMOS technology. Finally, two-element CMOS phased array front-ends based on passive and active phase shifting architectures are proposed, developed and compared.