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  • About
  • The Global ETD Search service is a free service for researchers to find electronic theses and dissertations. This service is provided by the Networked Digital Library of Theses and Dissertations.
    Our metadata is collected from universities around the world. If you manage a university/consortium/country archive and want to be added, details can be found on the NDLTD website.
21

The preparation and operation of lithium drift germanium detectors

Thompson, Albert Charles January 1966 (has links)
Lithium drifted germanium detectors have been prepared for use as high resolution gamma ray spectrometers. The fabrication procedure and the problems which can arise during preparation are discussed in detail. Using the techniques described, germanium detectors having the following characteristics were prepared. Active Volume 1.0 cm³ 0.5 cm³ 2.0 cm³ 1.7 cm³ Total Resolution at 661 keV 5.0 KeV 4.0 KeV 4.0 KeV 2.9 KeV / Science, Faculty of / Physics and Astronomy, Department of / Graduate
22

On the current-voltage characteristics of PIN and PSN diodes at high injection levels /

Gerhard, Glen Carl January 1963 (has links)
No description available.
23

Application of the Shockley-Read recombination statistics to the study of the P⁺NN⁺ diode /

Pang, Tet Chong January 1963 (has links)
No description available.
24

The tunnel diode monostable multivabrator

Morgan, Max Joseph, 1037- January 1961 (has links)
No description available.
25

Response of a germanium tunnel diode to CO2 laser radiation.

Ribakovs, Gennadijs. January 1970 (has links)
No description available.
26

Response of a germanium tunnel diode to CO2 laser radiation.

Ribakovs, Gennadijs. January 1970 (has links)
No description available.
27

Evaluation of dynamic and static electrical characteristics for the DY8 and YI8 process gallium diodes in comparison to the DI8 process boron diodes.

Dhoopati, Swathi 12 1900 (has links)
A rectifier is an electrical device, comprising one or more semiconductor devices arranged for converting alternating current to direct current by blocking the negative or positive portion of the waveform. The purpose of this study would be to evaluate dynamic and static electrical characteristics of rectifier chips fabricated with (a) DY8 process and (b) YI8 process and compare them with the existing DI8 process rectifiers. These new rectifiers were tested to compare their performance to meet or exceed requirements of lower forward voltages, leakage currents, reverse recovery time, and greater sustainability at higher temperatures compared to diodes manufactured using boron as base (DI8 process diodes) for similar input variables.
28

Reliability study of InGaN/GaN light-emitting diode

Li, Zonglin, 李宗林 January 2009 (has links)
published_or_final_version / Electrical and Electronic Engineering / Master / Master of Philosophy
29

Reliability study of InGaN/GaN light-emitting diode

Li, Zonglin, January 2009 (has links)
Thesis (M. Phil.)--University of Hong Kong, 2009. / Includes bibliographical references (p. 81-89). Also available in print.
30

Investigation into the efficiency limitations of InGaN-based light emitters

Crutchley, Benjamin G. January 2012 (has links)
No description available.

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