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Design and Fabrication of High-Speed 25Gb/s Directly Modulated DFB Semiconductor Laser DiodeWu, Yu-lun 15 August 2012 (has links)
With a rapid increase in information capacity of Internet access, high-speed, highly-efficiency, and cost-effectiveness laser source for optical fiber communication is required. High-speed 25Gb/s directly modulated laser is essential of this communication range, because of its simple structure, direct-modulation characteristics, low cost, and integration capability for wavelength division multiplexing (WDM) system, and moreover, it can achieved 100Gb/s data transmission by four channel module system.
In this work, data modulation speed of 25Gb/s direct modulation DFB laser has been achieved. By employing high-speed coplanar waveguide structure with semi-insulating substrate, high-speed with f3dB > 20GHz has been demonstrated. By the electrical reflection measurement, it confirmed that the high-speed direction modulation can be realized through reduction of electrical parasitics.
The laser chips is measured under continuous-wave mode at room temperature. In 1300nm and 1550nm wavelength device, slope efficiency obtained by taper fiber coupled of 0.045 and 0.07mW/mA respectively, output power up to 2.73 and 3.96mW/facet at 60mA. The Side Mode Suppression Ratio was greater than 35dB. 3dB bandwidth of greater than 16GHz and 20.5GHz, relaxation oscillation frequency of 12GHz and 16.6GHz. Finally, clearly back-to-back 25Gb/s eye diagram and error-floor-free performance were obtained.
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