Thesis (M.S. in Mechanical Engineering)--Naval Postgraduate School, June 2004. / Thesis Advisor(s): Terry McNelley. Includes bibliographical references (p. 41-43). Also available online.

Thesis (Ph. D.)--University of Wisconsin--Madison, 1968. / Typescript. Vita. eContent provider-neutral record in process. Description based on print version record. Includes bibliographical references.

Thesis (Ph. D.)--Ohio State University, 2006. / Constitutive modeling of slip, twinning, and untwinning in AZ31B magnesium. Includes bibliographical references (p. 139-152).

Thesis (M.S. in materials science and engineering)--Washington State University, August 2007. / Includes bibliographical references.

Single crystals of iron with 20, 28 and 40 at. % aluminium were deformed in compression at room temperature. The later two alloys were deformed also at temperatures in the range of yield stress anomaly. Room temperature deformation was carried under the atomic force microscope (AFM) and the evolution of surface was recorded in-situ. Samples deformed at elevated temperatures were investigated by AFM after the deformation. Dislocation structures in deformed samples were then investigated in transmission electron microscope (TEM). Observations of surface (AFM) and bulk (TEM) are compared. Results of both techniques mutually agree and support the interpretation of observed phenomena. Several original analysis methods were developed. Most notably the stereographic reconstruction, which was applied to dislocation structures and carbide particles present in investigated alloys. Model explaining the distribution of carbide particle axes is presented. Powered by TCPDF (www.tcpdf.org)

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A mobilidade térmica de discordância foi investigada em silício puro, floating zone, livre de discordâncias, utilizando medidas de rosetas produzidas por indentação. A mobilidade das discordâncias produzidas em amostras cobertas com camada de óxido crescida termicamente foi comparada com a de superfície não coberta. Um aumento da mobilidade térmica foi encontrado em amostras cobertas. Também foram obtidas informações sobre modificações na estrutura de discordâncias em rosetas relacionadas à anisotropia na dureza. Esse efeito foi encontrado como sendo dependente da temperatura. / The thermal mobility of dislocations was investigated in intrinsic floating zone dislocation free silicon using indentation dislocation rosette (IDR) measurements. The mobility of introduced dislocations in samples covered with a thermal oxide layer was compared with that with a bare surface. An increase on dislocation thermal mobility was found in covered samples. Also information about dislocations pattern structure modifications on IDR related to hardness anisotropy was obtained. This effect was found to be temperature dependent.

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Tomography of crystal defects in the electron microscope was first attempted in 2005 by the author and colleagues. This thesis further develops the technique, using a variety of samples and methods. Use of a more optimised, commercial tomographic reconstruction program on the original GaN weak beam dark-field (WBDF) tilt series gave a finer reconstruction with lower background, line width 10-20 nm. Four WBDF tilt series were obtained of a microcrack surrounded by dislocations in a sample of indented silicon, tilt axes parallel to g = 220, 220, 400 and 040. Moiré fringes in the defect impaired alignment and reconstruction. The effect on reconstruction of moiré fringe motion with tilt was simulated, resulting in an array of rods, not a flat plane. Dislocations in a TiAl alloy were reconstructed from WBDF images with no thickness contours, giving an exceptionally clear reconstruction. The effect of misalignment of the tilt axis with systematic row g(ng) was assessed by simulating tilt series with diffraction condition variation across the tilt range of Δn = 0, 1 and 2. Misalignment changed the inclination of the reconstructed dislocation with the foil surfaces, and elongated the reconstruction in the foil normal direction; this may explain elongation additional to the missing wedge effect in experiments. Tomography from annular dark-field (ADF) STEM dislocation images was also attempted. A tilt series was obtained from the GaN sample; the reconstructed dislocations had a core of bright intensity of comparable width to WBDF reconstructions, with a surrounding region of low intensity to 60 nm width. An ADF STEM reconstruction was obtained from the Si sample at the same microcrack as for WBDF; here automatic specimen drift correction in tomography acquisition software succeeded, a significant improvement. The microcrack surfaces in Si reconstructed as faint planes and dislocations were recovered as less fragmented lines than from the WBDF reconstruction. ADF STEM tomography was also carried out on the TiAl sample, using a detector inner angle (βin) that included the first order Bragg spots (in other series βin had been 4-6θ B). Extinctions occurred which were dependent on tilt; this produced only weak lines in the reconstruction. Bragg scattering in the ADF STEM image was estimated by summing simulated dark-field dislocation images from all Bragg beams at a zone axis; a double line was produced. It was hypothised that choosing the inner detector angle to omit these first Bragg peaks may preclude most dynamical image features. Additional thermal diffuse scattering (TDS) intensity due to dilatation around an edge dislocation was estimated and found to be insignificant. The Huang scattering cross section was estimated and found to be 9Å, ten times thinner than experimental ADF STEM dislocation images. The remaining intensity may be from changes to TDS from Bloch wave transitions at the dislocation; assessing this as a function of tilt is for further work. On simple assessment, only three possible axial channeling orientations were found over the tilt range for GaN; if this is typical, dechanneling contrast probably does not apply to defect tomography.

Gallium nitride and its alloys are direct band gap semiconductors with a wide variety of applications. Of particular importance are light emitting diodes and laser diodes. Due to the lack of suitable lattice-matched substrates, epitaxial layers contain a high density of defects such as dislocations. To reduce their number and to design a device with desired specifications, multilayered systems with varying composition (and thus material properties) are grown. Theoretical modelling is a useful tool for gaining understanding of various phenomena and materials properties. The scope of the present work is wide. It ranges from a continuum theory of dislocations treated within the linear elasticity theory, connects the continuum and atomistic level modelling for the case of the critical thickness of thin epitaxial layers, and covers some issues of simulating the electronic structure of III-nitride alloys by means of the first principle methods. The first part of this work discusses several topics involving dislocation theory. The objectives were: (i) to apply general elasticity approaches known from the literature to the specific case of wurtzite materials, (ii) to extend and summarise theoretical studies of the critical thickness in heteroepitaxy. Subsequently, (iii) to develop an improved geometrical model for threading dislocation density reduction during the growth of thick GaN films. The second part of this thesis employs first principles techniques (iv) to investigate the electronic structure of binary compounds (GaN, AlN, InN) and correlate these with experimentally available N K-edge electron energy loss near edge structure (ELNES) data, (v) to apply the special quasi-random structures method to ternary III-nitride wurtzite alloys aiming to develop a methodology for modelling wurtzite alloys and to get quantitative agreement with experimental N K-edge ELNES structures, and (vi) to theoretically study strain effects on ELNES spectra.