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  • About
  • The Global ETD Search service is a free service for researchers to find electronic theses and dissertations. This service is provided by the Networked Digital Library of Theses and Dissertations.
    Our metadata is collected from universities around the world. If you manage a university/consortium/country archive and want to be added, details can be found on the NDLTD website.
31

Slip propagation across high angle grain boundaries /

Bamford, Thomas Anthony January 1986 (has links)
No description available.
32

An investigation of dislocation movement through metallic grain boundaries /

Shen, Zhiyong January 1987 (has links)
No description available.
33

Atomic simulation of the a/2 <110> (110) edge dislocation in the NaCl lattice /

Hoagland, Richard Gordon January 1973 (has links)
No description available.
34

Texture development in polycrystalline copper during torsional deformation

Canova, Gilles R. January 1982 (has links)
No description available.
35

COMPARATIVE STUDY OF DISLOCATION BEHAVIOR IN SINGLE-CRYSTAL AND RIBBON-TO-RIBBON SILICON.

Pinamaneni, Subba Rao. January 1983 (has links)
No description available.
36

Some applications of the generalised Peierls-Nabarro model for screw dislocations

Leung, Siu-ho., 梁少豪. January 1998 (has links)
published_or_final_version / abstract / toc / Mechanical Engineering / Master / Master of Philosophy
37

Texture transition in aluminum

Stephens, Arthur William, 1936- January 1965 (has links)
No description available.
38

Atomic and electronic structure of grain boundaries in gallium arsenide

Krishna, Sujata January 1994 (has links)
HREM imaging was performed using the Jeol 4000ex microscope on specimens prepared from an as-grown ingot of semi-insulating Gallium Arsenide. Various low angle grain boundaries were imaged in the [110] orientation, misorientations varying between 4°-13°. Detailed study of a grain boundary of 11.5° misorientation about the [110] rotation axis has been carried out. Burgers vector analysis showed the presence of perfect 60° and [001] dislocations. Modelling of the [001] dislocation has been carried out using the Tersoff potential, Bond Order Potential and a tight binding Hamiltonian for GaAs, using Chadi (1984) parameters. The dislocation core was associated with an 8-membered and two 5-membered rings. Assum- ing there is a minimum of wrong bonds, we predict that the core has two wrong bonds, one being Ga-Ga, and the other As-As, both in equivalent positions where the two 5-membered rings were appended to the 8-membered ring. The Ga-Ga bond is considerably shorter and hence stronger than the As-As bond. Band structure calculations performed using a Vogl (1983) sp<sup>3</sup>s* Hamiltonian revealed deep states in the gap, which are associated with atoms in the core only. Using Stadelmann's (1987) EMS program, successful image matching of calculated images of the [001] dislocation has been achieved with the experimental image, using the atomic structure generated by tight binding relaxation. Ga and As being only two atomic numbers apart have similar scattering factors and cannot be easily distinguished in the experimental image. The equivalence of the position of the two wrong bonds greatly eases image matching as it is no longer necessary to know which is the Ga-Ga , and which is the As-As bond. This is the first suggested model of the [001] dislocation in GaAs, to the best of my knowledge. It is found to be similar to the atomic structure of the 90° partial dislocation in silicon (Bigger et al., 1992). No account of segregation of impurities to the grain boundary, or the [001] dislocation core is taken here, though it is very likely that an impurity atom would sit itself in this large space. The relaxed atomic structure for the 60° dislocation showed a doubling of periodicity along the dislocation line, similar to that found in the 30° partial in Si. The core consists of a 7-membered and a 5-membered ring with a minimum of two wrong bonds. In addition to this, quantitative comparisons of the [001] HREM image and simulated structures have been made and an iterative structure refinement carried out in order to achieve the best image matching. The resultant 'experimental-best-fit' structure was not found to be physically or chemically plausible.
39

Testing a criterion for dislocation nucleation using molecular dynamics simulations of nano-indentation /

Zhao, YanJuan. January 1900 (has links)
Thesis (M.App.Sc.) - Carleton University, 2005. / Includes bibliographical references (p. 121-125). Also available in electronic format on the Internet.
40

The dislocation structure and slip systems in [beta]-NiAl single crystals deformed in high temperature creep

Bevk, Joze, January 1968 (has links)
Thesis (M.S.)--University of Wisconsin--Madison, 1968. / eContent provider-neutral record in process. Description based on print version record. Includes bibliographical references.

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