Two-dimensional (2-D) models of electrical resistivity are improved by jointly inverting radiomagnetotelluric (RMT) and direct-current resistivity (DCR) data or by allowing for displacement currents in the inversion of RMT data collected on highly resistive bedrock. Uniqueness and stability of the 2-D models are assessed with a model variance and resolution analysis that allows for the non-linearity of the inverse problem. Model variance and resolution are estimated with a truncated singular value decomposition (TSVD) of the sensitivity matrix. In the computation of model errors, inverse singular values are replaced by non-linear semi-axes and the number of included eigenvectors is increased until a given error threshold is reached. Non-linear error estimates are verified with most-squares inversions. For the obtained truncation levels, model resolution matrices are computed. For RMT data, non-linear error appraisals are smaller than linearized ones. Hence, the consideration of the non-linearity in RMT data leads to reduced model errors or enhanced model resolution. The dielectric effect on RMT data is investigated with a new 2-D forward and inverse code that allows for displacement currents. As compared to the quasi-static approximation, apparent resistivities and phases of the impedance tensor elements are found to be significantly smaller and the vertical magnetic transfer function exhibits more distinct sign reversals. More reliable models of electrical resistivity are obtained from areas with highly resistive bedrock, if displacement currents are allowed for. In contrast, inversions with a quasi-static scheme introduce artefactual structures with extremely low or high resistivities. A smoothness-constrained 2-D joint inversion of RMT and DCR data is presented. The non-linear model variance and resolution analysis is applied to single and joint inverse models. For DCR data, the errors estimated by most-squares inversions are consistently larger than those estimated by the non-linear semi-axes, indicating that DCR models are poorly resolved. Certain areas of the joint inverse models are better resolved than in the single inverse models.

This work describes infrared (IR) photon detector techniques based on novel semiconductor device concepts and detector designs. The aim of the investigation was to examine alternative IR detection concepts with a view to resolve some of the issues of existing IR detectors such as operating temperature and response range. Systems were fabricated to demonstrate the following IR detection concepts and determine detector parameters: (i) Near-infrared (NIR) detection based on dye-sensitization of nanostructured semiconductors, (ii) Displacement currents in semiconductor quantum dots (QDs) embedded dielectric media, (iii) Split-off band transitions in GaAs/AlGaAs heterojunction interfacial workfunction internal photoemission (HEIWIP) detectors. A far-infrared detector based on GaSb homojunction interfacial workfunction internal photoemission (HIWIP) structure is also discussed. Device concepts, detector structures, and experimental results discussed in the text are summarized below. Dye-sensitized (DS) detector structures consisting of n-TiO2/Dye/p-CuSCN heterostructures with several IR-sensitive dyes showed response peaks at 808, 812, 858, 866, 876, and 1056 nm at room temperature. The peak specific detectivity (D*) was 9.5E+10 Jones at 812 nm at room temperature. Radiation induced carrier generation alters the electronic polarizability of QDs provided the quenching of excitation is suppressed by separation of the QDs. A device constructed to illustrate this concept by embedding PbS QDs in paraffin wax showed a peak D* of 3E+8 Jones at ~540 nm at ambient temperature. A typical HEIWIP/HIWIP detector structures consist of single (or multiple) period(s) of doped emitter(s) and undoped barrier(s) which are sandwiched between two highly doped contact layers. A p-GaAs/AlGaAs HEIWIP structure showed enhanced absorption in NIR range due to heavy/light-hole band to split-off band transitions and leading to the development of GaAs based uncooled sensors for IR detection in the 2 5 μm wavelength range with a peak D* of 6.8E+5 Jones. A HIWIP detector based on p-GaSb/GaSb showed a free carrier response threshold wavelength at 97 µm (~3 THz)with a peak D* of 5.7E+11 Jones at 36 μm and 4.9 K. In this detector, a bolometric type response in the 97 - 200 µm (3-1.5 THz) range was also observed.