The purpose of the research is probing for the cause that red shift of green-host Alq3 is doped by red dopant with concentration increasing. Generally speaking, this phenomenon of red shift is resulted from the excimer that complex formed by the interaction of an excited molecular entity with a ground state partner of the same structure. And that excimer maybe formed by cyaniding group of red dopant because of the molecular polarity. We will survey the difference of spectra when Alq3 doped guest with different doping concentration in order that research the circumstance of energy transfer. We also success to synthesize the novel material of red dopant from green-dopant C545P,and name the red dopant ¡§RC545P¡¨. Then, we will measure the performance of the RC545P to compare with DCJTB that is often used to be the red dopant in OLED. Finally, we prove the assumption that excimer formed by cyaniding group is result in the red shift of spectra. Moreover, the emission efficiency of RC545T (9.28) in solution is better than DCJTB (7.96), but the efficiency of Alq3 energy transfer to RC545T (17.88%) is worse than DCJTB (36.72%). In thin film, the emission efficiency of Alq3 doped RC545T (42.3) is closer than Alq3 doped DCJTB (48.9). the optimal concentration ratio of Alq3 doped RC545T is between 1% and 2%.

No description available.

It has become increasingly apparent that the future of electronic devices can and will rely on the functionality provided by single or few dopant atoms. The most scalable physical system for quantum technologies, i.e. sensing, communication and computation, are spins in crystal lattices. Diamond is an excellent host crystal offering long room temperature spin coherence times and there has been exceptional experimental work done with the nitrogen vacancy center in diamond demonstrating many forms of spin control. Transition metal dopants have additional advantages, large spin-orbit interaction and internal core levels, that are not present in the nitrogen vacancy center. This work explores the implications of the internal degrees of freedom associated with the core d levels using a tight-binding model and the Koster-Slater technique. The core d levels split into two separate symmetry states in tetrahedral bonding environments and result in two levels with different wavefunction spatial extents. For 4d semiconductors, e.g. GaAs, this is reproduced in the tight-binding model by adding a set of d orbitals on the location of the transition metal impurity and modifying the hopping parameters from impurity to its nearest neighbors. This model does not work in the case of 3d semiconductors, e.g. diamond, where there is no physical reason to drastically alter the hopping from 3d dopant to host and the difference in wavefunction extent is not as pronounced. In the case of iron dopants in gallium arsenide the split symmetry levels in the band gap are responsible for a decrease in tunneling current when measured with a scanning tunneling microscope due to interference between two elastic tunneling paths and comparison between wavefunction measurements and tight-binding calculations provides information regarding material parameters. In the case of transition metal dopants in diamond there is less distinction between the symmetry split d levels. When considering pairs of transition metal dopants an important quantity is the exchange interaction between the two, which is a measure of how fast a gate can be operated between the pair and how well entanglement can be created. The exchange interaction between pairs of transition metal dopants has been calculated in diamond for several directions in the (110) plane, and for select transition metal dopants in gallium arsenide. In tetrahedral semiconductors transition metal dopants provide an internal degree of freedom due to the symmetry split d levels and this included functionality makes them special candidates for single spin based quantum technologies as well as physical systems to learn about fundamental physics.

Various sizes of BaTiO3 and Cr3+-doped BaTiO3 nanocrystals were synthesized through hydrothermal and solvothermal methods. The applied solvents water, ethanol and benzyl alcohol lead to nanoparticles with average sizes of 200, 10 and 5 nm, respectively. The nanocrystals were treated with trioctylphosphine oxide to remove surface-bound dopant ions, and colloidal free-standing nanocrystals smaller than 10 nm were obtained by using oleic acid as a dispersant surfactant. The tetragonal-to-cubic phase transition at room temperature of undoped nanocrystalline BaTiO3 has been investigated by powder X-ray diffraction (XRD) and Raman spectroscopy. The size effect of nanoscale BaTiO3 is observed that the tetragonal phase becomes unstable with decreasing particle size. However, we found that ferroelectric tetragonal structure persists to some extent even for particles at 5 nm. The successful substitution of Ti4+ with Cr3+ in the host BaTiO3 lattice for all three sizes was achieved at different Cr3+/Ti4+ molar ratios. The dopant is found to significantly promote the phase transition, even dominate over the size effect. Ligand-field electronic absorption spectroscopy suggests a subtle change of the octahedral coordinated Cr3+ environments between particles at 5 and 10 nm, confirming the structural differences. Preliminary magnetic measurement indicates Cr3+ as isolated paramagnetic ions without any chromium clusters or oxides. The ability to rationally manipulate the ferroelectric properties of BaTiO3 by size and dopants, in combination with possible ferromagnetism induced by incorporating paramagnetic transition metal ions, opens up new opportunities for modern multiferroic materials in information storage technology.

Various sizes of BaTiO3 and Cr3+-doped BaTiO3 nanocrystals were synthesized through hydrothermal and solvothermal methods. The applied solvents water, ethanol and benzyl alcohol lead to nanoparticles with average sizes of 200, 10 and 5 nm, respectively. The nanocrystals were treated with trioctylphosphine oxide to remove surface-bound dopant ions, and colloidal free-standing nanocrystals smaller than 10 nm were obtained by using oleic acid as a dispersant surfactant. The tetragonal-to-cubic phase transition at room temperature of undoped nanocrystalline BaTiO3 has been investigated by powder X-ray diffraction (XRD) and Raman spectroscopy. The size effect of nanoscale BaTiO3 is observed that the tetragonal phase becomes unstable with decreasing particle size. However, we found that ferroelectric tetragonal structure persists to some extent even for particles at 5 nm. The successful substitution of Ti4+ with Cr3+ in the host BaTiO3 lattice for all three sizes was achieved at different Cr3+/Ti4+ molar ratios. The dopant is found to significantly promote the phase transition, even dominate over the size effect. Ligand-field electronic absorption spectroscopy suggests a subtle change of the octahedral coordinated Cr3+ environments between particles at 5 and 10 nm, confirming the structural differences. Preliminary magnetic measurement indicates Cr3+ as isolated paramagnetic ions without any chromium clusters or oxides. The ability to rationally manipulate the ferroelectric properties of BaTiO3 by size and dopants, in combination with possible ferromagnetism induced by incorporating paramagnetic transition metal ions, opens up new opportunities for modern multiferroic materials in information storage technology.

Diamond has since many years been applied in electronic fields due to its extraordinary properties. Substitutional dopants and surface functionalization have also been introduced in order to improve the electrochemical properties. However, the basic mechanism at an atomic level, regarding the effects of dopants and terminations, is still under debate. In addition, theoretical modelling has during the last decades been widely used for the interpretation of experimental results, prediction of material properties, and for the guidance of future materials. Therefore, the purpose of this research project has been to theoretically investigate the influence of dopants and adsorbates on electronic and geometrical structures by using density functional theory (DFT) under periodic boundary conditions. Both the global and local effects of dopants (boron and phosphorous) and terminations have been studied. The models have included H-, OH-, F-, Oontop-, Obridge- and NH2-terminations on the diamond surfaces. For all terminating species studied, both boron and phosphorous have been found to show a local impact, instead of a global one, on diamond structural geometry and electronic properties. Therefore, the terminating species only affect the DOS of the surface carbon layers. In addition, Oontop-terminated (111) diamond surfaces present reactive surface properties and display metallic conductivity. Moreover, the conductivity of the diamond surface can be dramatically increased by the introduction of a phosphorous dopant in the lattice. The work function of a diamond surface has also been found to be influenced to a large extent by the various adsorbates and the dopant levels. Diamond can also be used as a promising substrate for an epitaxial graphene adlayer. The effects of dopants and terminations on the graphene and diamond (111) interfacial systems have been investigated theoretically in great detail. The interfacial interaction is of the Van der Waal type with an interfacial distance around 3 Å. The interactions between graphene and a terminated diamond substrate were found to be relatively weaker than those for a non-terminated diamond substrate (even with dopants). For all interface systems between graphene and diamond, a diamond-supported graphene adlayer without induced defects can still keep its intrinsic high carrier mobility. A minor charge transfer was observed to take place from the graphene adlayer to a non-terminated diamond substrate (with or without dopants) and to Oontop-, OH- or Obridge-terminated diamond substrates. However, for the situation with an H-terminated diamond surface, the electron transfer took place from the diamond surface to graphene. On the contrary, an interfacial system with a non-terminated diamond surface offers a more pronounced charge transfer than that of the terminated diamond substrates. A small finite band gap at the Dirac point was also observed for the Oontop-terminated diamond-supporting graphene adlayer.

No description available.

Novel glass tracers, organic and inorganic polymers based on narrow band atomic fluorescence, have been developed for deployment as environmental tracers. The use of discrete fluorescent species in an environmentally stable host has been investigated to replace existing toxic, broad band molecular dye tracers. The narrow band emission signals offer the potential for the tracing of a large numbers of signals in the same environment; this has been investigated by examining multiple doped tracers which have the potential for coding to specific effluent sources or particulates. The concept of using lanthanide doped glasses as environmental tracers has been demonstrated. The spectral characterisation and concentration studies of the lanthanide doped tracer allow the selection of parameters to produce future tracers and detection systems for particular applications. Therefore by altering the chosen lanthanide dopant, number of dopants, dopant concentration and using selective excitation and emission wavelengths there are a huge number of possible unique tracer combinations. The significantly narrower bandwidth emission peaks of the lanthanide based tracers achieve more selective detection of multiple tracers without overlap interference and gives the potential to selectively and simultaneously monitor many different tracers in the same location. The spectral lifetime characteristics of the lanthanide tracers are very different from the lifetime of background fluorescence which is typically molecular in origin. This is an extra discrimination against background interference and is an important additional advantage of using lanthanide based tracers. Overall this work shows that a very large number of unique environmental tracers can be obtained by varying the concentration, the number of lanthanide ions in a glass and also the possibility of using organic and inorganic lanthanide chelate doped tracers.

Organic Light Emitting Diodes (OLEDs) are widely viewed as next generation platform for flat panel displays and solid state lighting. Currently, OLED efficiency is not high due to high driving voltage. Molybdenum trioxide (MoO3) is ideal for p-type doping of the wide bandgap organic semiconductor 4,4’-bis-9-carbozyl biphenyl (CBP). With p-type doped CBP layer as Hole Transport Layer (HTL), driving voltage can be significantly reduced. Effective design for doped OLED structure consists of a HTL with doped layer from 20nm to 40nm and MoO3 concentration above 5%, the optimized OLED with doped CBP HTL present an 18% improvement over a standard device with CBP HTL at 100mA/cm2. Injection is found to be the principle cause of the reduction of driving voltage and shows close relations to doped layer thickness. Also charge balance is an important factor for high current efficiency, doped layer can be used as tools to promote charge balance.

Organic Light Emitting Diodes (OLEDs) are widely viewed as next generation platform for flat panel displays and solid state lighting. Currently, OLED efficiency is not high due to high driving voltage. Molybdenum trioxide (MoO3) is ideal for p-type doping of the wide bandgap organic semiconductor 4,4’-bis-9-carbozyl biphenyl (CBP). With p-type doped CBP layer as Hole Transport Layer (HTL), driving voltage can be significantly reduced. Effective design for doped OLED structure consists of a HTL with doped layer from 20nm to 40nm and MoO3 concentration above 5%, the optimized OLED with doped CBP HTL present an 18% improvement over a standard device with CBP HTL at 100mA/cm2. Injection is found to be the principle cause of the reduction of driving voltage and shows close relations to doped layer thickness. Also charge balance is an important factor for high current efficiency, doped layer can be used as tools to promote charge balance.