Yes / Much attention has been paid to making 5G developments more en-ergy efficient, especially in view of the need for using high data rates with more complex modulation schemes within a limited bandwidth. The concept of the Doherty power amplifier for improving amplifier efficiency is explained in addi-tion to a case study of a 70W asymmetrical Doherty power Amplifier using two GaN HEMTs transistors with peak power ratings of 45W and 25W. The rationale for this choice of power ratio is discussed. The designed circuit works in the 3.4GHz frequency band with 200 MHz bandwidth. Rogers RO4350B substrate with dielectric constant εr=4.66 and thickness 0.035 mm is used. The perfor-mance analysis of the Doherty power amplifier is simulated using AWR MWO software. The simulated results showed that 54-64% drain efficiency has been achieved at 8 dB back-off within the specified bandwidth with an average gain of 10.7 dB.

ITC/USA 2005 Conference Proceedings / The Forty-First Annual International Telemetering Conference and Technical Exhibition / October 24-27, 2005 / Riviera Hotel & Convention Center, Las Vegas, Nevada / A conventionally designed radio frequency amplifier operated in its linear region exhibits low DC to RF conversion efficiency. Typically, for a power amplifier designed for digital modulation applications, the amplifier is operated “backed-off” from its P1dB point by a factor of 10 or -10 dB. The typical linear amplifier is biased for either Class A or Class A/B operation depending on the acceptable design trade-offs between efficiency and linearity between these two methods. A novel design approach to increasing the efficiency of a linear RF power amplifier using a modified Odd-Way Doherty technique is presented in this paper. The design was simulated, built and then tested. The design yields improvements in efficiency and linearity.