This work is to control the fluxes of the Ga, In and Al sources in our MBE system to grow lattice-matched InGaAs, InAlAs and InGaAlAs epi-layers on InP substrates. With the As overpressure condition in the MBE system, we can control the temperature of Ga K-cell to modulate the flux of Ga. In ideal situation, the flux of Ga has a direct ratio with the GaAs growth rate on GaAs substrate, so we can find the Ga flux dependence on temperature by measuring the RHEED oscillation frequency. From the growth rate data of InGaAs on GaAs substrate at lower In composition, the In flux was obtained by comparing the growth rate ratio to the GaAs case. In the same way, we can also get the flux of Al by the growth of AlAs or AlGaAs on GaAs substrate. With the results of flux experiment, we can modulate the temperature of Ga, In and Al K-cells to compose InGaAs, InAlAs and InGaAlAs lattice-matched on InP substrates. The epi-layer quality was examined by X-ray diffraction and photo-absorption spectrum. We have built the flux equations for the Ga, In and Al sources from the experiment data. With the In K-cell temperature at 833~836¢J, Ga(1) at 931¢J and Al at 1094¢J, we have grown ternary compound semiconductors of In0.532Ga0.468As and In0.523Al0.477As lattice-matched on InP substrates. When the In K-cell temperature at 833~836¢J, Ga(2) at 912¢J and Al at 1059¢J, a quaternary compound semiconductor of In0.527Ga0.245Al0.228As (Eg=1eV) lattice-matched on InP substrate was demonstrated.

The work of this thesis includes the growth of TE polarization and polarization insensitive semiconductor optical amplifier structures by molecular beam epitaxy. The former is suited to fabricate the SOA and laser of the emitter, the latter is suited to fabricate the SOA of the repeater and receiver. The materials of InAl(1)As, InGa(1)Al(2)As and InGa(2)As were used to be the cladding layer, SCH layer and quantum well(QW), respectively. The first kind of our SOA structures is for 1.55-£gm TE polarization. The materials of InGa(1)As and InGa(2)As were used to be QW and sub-well, respectively. The second kind of our SOA structures is for 1.55-£gm polarization insensitive. To get polarization insensitive characteristics we use tensile strained InGa(3)As material and add two very thin compressive strain layers, InGa(1)As, in QWs to be sub-wells to mostly confine hh1 state. It has the effect of reducing red shift on the e1-hh1 transition and help to partially balance the strain in QW before the thickness of the tensile strained InGa(3)As exceeds one half of the critical layer thickness. These two kinds of structures include three QWs with modulation doping. It can reduce transparency current and noise figure and increase the saturation output power of SOA with the n-type modulation doping. We had successfully grown the polarization insensitive SOA structure for 1.52-£gm. The wavelength of TE polarization SOA structures we grew were at 1.45(µm) and 1.47(µm) and there were somewhat differences between the designed and grown. We can increase the PL efficiency after rapid thermal annealing at 550¢J for 30(s)~45(s).

The work of this thesis includes designs, molecular beam epitaxy (MBE) growths and optical study of electro-absorption modulator (EAM) structures. Three EAM structures are designed near 1.5 um : symmetric, asymmetric multiple quantum wells (MQWs) of TE polarization, and polarization insensitive MQWs. For symmetric and asymmetric MQWs simulation of TE polarization, their red-shift are 31 nm and 50 nm, respectively, as the electric field decrease from -40 kV/cm to -120 kV/cm. For polarization insensitive MQWs, we use the strained quantum-well concept to achieve same transition energy and absorption. After growth by MBE system, the samples were fabricated in mesa type by photolithography and wet etching. For symmetric and asymmetric quantum wells of TE polarization¡Gthe red-shift are 16 nm and 49 nm, respectively, as the bias decrease form 0-1 volt to 0-6 volt. Because of small ¡µn near subband transition energy, these two samples exhibit small chirp parameter. However, the photoluminescence (PL) and photocurrent spectra of these two ones were not near 1.5 um and obvious absorption edge. The possible reason is that the molecular beam flux have changed during growth. For polarization insensitive MQWs, the PL spectra shows 1494 nm, which only 25.6 nm differ from our design. Also, the photocurrent spectra of TE and TM polarization nearly exhibit same transition energy and have small chirp parameter.

Atomic Layer Epitaxy is a stepwise deposition process by supplying the sources materials alternatively. This deposition technique provides the monolayer control of film thickness and the uniform film growth over a large area. ZnSxSe1-x layers were grown epitaxially onto Si and GaAs substrate by using DMZn and H2S , H2Se gases for the reactant source. Owing to the self-limiting characteristics of ALE process, ZnSxSe1-x monolayers could be deposited over a wide range of temperature within growth window. In this study, for obtaining high crystalline quality ZnSxSe1-x epitaxial films, various growth conditions were investigated including substrate temperature, the flow rate of DMZn, H2S and H2Se, H2 purge duration and pulse duration etc.. A thermodynamic analysis based the calculation of Seki et. al [6], was used to investigate the effects by varying the substrate temperature, input mole ratio of group VI source gases on equilibrium partial pressure, solid composition and solid-vapor distribution relation of this alloy. The interaction parameter of ZnSxSe1-x, £[, was estimated by using the delta-lattice parameter (DLP) model suggested by Stringfellow [39]. Finally, it shows that the thermodynamic analysis provides a useful guideline for the growth of ZnSxSe1-x alloy on Si and GaAs substrates.

Thesis (Ph. D.)--University of Missouri-Columbia, 2000. / Typescript. Vita. Includes bibliographical references (leaves 87-91). Also available on the Internet.

Thesis (Ph. D.)--West Virginia University, 2001. / Title from document title page. Document formatted into pages; contains xvii, 161 p. : ill. Includes abstract. Includes bibliographical references (p. 154-161).

Thesis (Ph. D.)--University of Washington, 2000. / Vita. Includes bibliographical references (p. 116-127).

Thesis (Ph. D.)--University of Texas at Austin, 2001. / Vita. Includes bibliographical references. Available also from UMI/Dissertation Abstracts International.

Thesis (M. Phil.)--Hong Kong University of Science and Technology, 2004. / Includes bibliographical references (leaves 44-48). Also available in electronic version. Access restricted to campus users.

Thesis (Ph. D.)--University of Texas at Austin, 2003. / Supervisor: Archie L. Holmes, Jr. Vita. Includes bibliographical references. Also available from UMI.