Optical amplifiers are highly sought-after in optical communications to power boost light signals carrying information. Rare Earth doped glasses have been the medium of choice for optical amplification. It is, therefore, essential to understand the interaction of light with potential host glasses for rare-earths before they could be proposed as suitable candidates. In this research, we have optically characterized three different rare earth doped bulk glasses. The glass samples investigated were Neodymium doped Gallium Lanthanum Sulfide (GLS:Nd), Erbium doped Germanium Gallium Sulfide (GeGaS:Er) and Erbium doped Fluorochlorozirconate (FCZ:Er). The transmission spectra, T(λ), was used in identifying the absorption transitions of rare earth ions from the ground level to the various excited levels and in obtaining the optical absorption coefficient, α(λ). This in turn was used in determining the Judd-Ofelt parameters, which were then used in obtaining radiative lifetimes of the energy levels of interest. Photoluminescence emission bands were also identified and their shapes were investigated. Finally, a comparison of the Judd-Ofelt lifetime with the experimental decay time was also done. From which, the major decay mechanism of the rare earth ions from the energy level under investigation was concluded.

A tunable erbium-doped fiber ring laser using an intra-cavity Fabry-Perot filter as the tuning element is investigated. Tuning is achieved by varying the applied voltage which controls the FP cavity length. The laser's wavelength is monitored using an optical spectrum analyzer to determine the laser's spectral characteristics under static conditions at different wavelengths over its tuning range of approximately 50nm. When the laser is tuned rapidly, the frequency versus time characteristic is determined using a fiber Fabry-Perot interferometer with a photodetector to convert the optical signal to an electrical signal. The core of the research is to determine the degree of spectral broadening of the laser as a function of the spectral tuning rate. The fringe contrast of fiber Fabry-Perot interferometer transmittance curves decreases with increase in the tuning frequency. The gain at a certain wavelength becomes a function of time putting an upper limit on the tuning frequency of the system. The carrier lifetime of erbium ions dictates the maximum achievable tuning speed.

Thesis (Ph.D.)--McMaster University (Canada), 1991. / Source: Dissertation Abstracts International, Volume: 54-02, Section: B, page: 0847.

Universiẗat, Diss.--Paderborn, 2003.

Made available in DSpace on 2014-06-11T19:23:29Z (GMT). No. of bitstreams: 0 Previous issue date: 2009-04-16Bitstream added on 2014-06-13T19:29:33Z : No. of bitstreams: 1 ravaro_lp_me_bauru.pdf: 967737 bytes, checksum: 4467c85af230546c2464c3465069b809 (MD5) / Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP) / Dióxido de estanho (Sn'O IND. 2') é um semicondutor do tipo n, que é transparente na região do ultravioleta/visível. Possui muitas aplicações como, por exemplo, eletrodos transparentes, sensores de gás, coletores solares e dispositivos eletro-ópticos. Quando dopado com íons terras-raras, Sn'O IND. 2' pode ser utilizado na confecção de dispositivos para comunicação óptica, principalmente na forma de filmes finos. Os íons terras-raras têm grande relevância devido às transições eletrônicas, que vão do ultravioleta ao infravermelho próximo. Outro aspecto importante está ligado às características físico-químicas da suspensão coloidal de onde são depositados os filmes. Filmes obtidos com pH elevado da suspensão apresentam alta resistividade elétrica e baixa cristalinidade em relação aos filmes obtidos com pHs das suspensões ácidas. O nível mais profundo de energia dos defeitos em Sn'O IND. 2' foi alterado da energia de 140eV até 67eV para variação do pHs 11, até 6, de acordo com a avaliação da energia de ativação. Os difratogramas destes filmes indicam aumento de cristalinidade com a diminuição do pH. Xerogéis de Sn'O IND. 2':Er2% com alteração do pH em relação a suspensão neutra apresentaram espectro de emissão mais intenso na região infravermelha para a amostra com pH7 e um pequeno alargamento dos picos de emissão para a amostra com pH4 e mais acentuado para a amostra com pH11, em bom acordo com medidas de Raman. Relatamos também a emissão na região visível de filme fino de Sn'O IND. 2' dopado com 'Er POT. 3+', que é um formato adequado da amostra para confecção de dispositivos. / Tin dioxide (Sn'O IND. 2') is an n-type oxide semicondutor, which is transparent in the ultraviolet/visible range. It presents many types of applications, such as transparent electrodes, gas sensors, solar collectors and eletro-optical devices. When doped with rare-earth ions, Sn'O IND. 2' may be used to make optical communication devies, in the thin film configuration. Rare-earth ions have great relevance due to their electronic transitions, covering from ultraviolet to near infrared. Another important characteristic is related to the physical-chemical properties of the starting colloidal suspension to deposit the films. Films obtained with high pH of the suspension presents high electric resistivity and low crystallinity compared to films obtained with acid pH. The deepest energy level of the defects in Sn'O IND. 2' has been changed from the energy of 140 eV to 67 e V when the pH changes from 11 to 6. Diffractograms of these films show increase in the crystallinity with pH decrease. Sn'O IND. 2':Er2% xerogels with modified pH show more intense emission spectra in the infrared for sample with pH 7 and a low broadening of emission peaks for the sample with pH 4 and moer intense for pH 11, suggesting an ideal pH for higher emission samples, in good agreement with Raman shift spectra. We also report emission in the visible range from of an 'Er POT. 3+' -doped thin film, which is a very convenient form for devices fabrication.

Made available in DSpace on 2014-10-09T12:28:23Z (GMT). No. of bitstreams: 0 / Made available in DSpace on 2014-10-09T13:56:27Z (GMT). No. of bitstreams: 0 / Dissertacao (Mestrado Profissionalizante em Lasers em Odontologia) / IPEN/D-MPLO / Instituto de Pesquisas Energeticas e Nucleares - IPEN-CNEN/SP; Faculdade de Odontologia, Universidade de Sao Paulo, Sao Paulo

Made available in DSpace on 2014-10-09T12:44:45Z (GMT). No. of bitstreams: 0 / Made available in DSpace on 2014-10-09T13:58:01Z (GMT). No. of bitstreams: 1 06998.pdf: 4836505 bytes, checksum: 8807c39ebe15873ea228aaf490e0ed91 (MD5) / Dissertacao (Mestrado Profissionalizante em Lasers em Odontologia) / IPEN/D-MPLO / Intituto de Pesquisas Energeticas e Nucleares, IPEN/CNEN-SP; Faculdade de Odontologia, Universidade de Sao Paulo

Made available in DSpace on 2014-10-09T12:44:52Z (GMT). No. of bitstreams: 0 / Made available in DSpace on 2014-10-09T13:57:59Z (GMT). No. of bitstreams: 1 07161.pdf: 4310254 bytes, checksum: f0dfb6cd3b3b09bc19f77218f18e63a2 (MD5) / Dissertacao (Mestrado Profissionalizante em Lasers em Odontologia) / IPEN/D-MPLO / Instituto de Pesquisas Energeticas e Nucleares, IPEN/CNEN-SP; Faculdade de Odontologia, Universidade de Sao Paulo

Made available in DSpace on 2014-10-09T12:46:38Z (GMT). No. of bitstreams: 0 / Made available in DSpace on 2014-10-09T13:58:05Z (GMT). No. of bitstreams: 1 08351.pdf: 5297394 bytes, checksum: 64bc1483562150f9c5eeb05214a169f5 (MD5) / Dissertacao (Mestrado Profissionalizante em Lasers em Odontologia) / IPEN/D-MPLO / Instituto de Pesquisas Energeticas e Nucleares, IPEN/CNEN-SP; Faculdade de Odontologia, Universidade de Sao Paulo

abstract: Nanowires (NWs) have attracted many interests due to their advance in synthesis and their unique structural, electrical and optical properties. NWs have been realized as promising candidates for future photonic platforms. In this work, erbium chloride silicate (ECS), CdS and CdSSe NWs growth by vapor-liquid-solid mechanism and their characterization were demonstrated. In the ECS NWs part, systematic experiments were performed to investigate the relation between growth temperature and NWs structure. Scanning electron microscopy, Raman spectroscopy, X-ray diffraction and photoluminescence characterization were used to study the NWs morphology, crystal quality and optical properties. At low growth temperature, there was strong Si Raman signal observed indicating ECS NWs have Si core. At high growth temperature, the excess Si signal was disappeared and the NWs showed better crystal quality and optical properties. The growth temperature is the key parameter that will induce the transition from Si/ECS core-shell NWs structure to solid ECS NWs. With the merits of high Er concentration and long PL lifetime, ECS NWs can serve as optical gain material with emission at 1.5 μm for communications and amplifiers. In the CdS, CdSSe NWs part, the band gap engineering of CdSSe NWs with spatial composition tuning along single NWs were demonstrated. The first step of realizing CdSSe NWs was the controlled growth of CdS NWs. It showed that overall pressure would largely affect the lengths of the CdS NWs. NWs with longer length can be obtained at higher pressure. Then, based on CdS NWs growth and by adding CdSe step by step, composition graded CdSSe alloy NWs were successfully synthesized. The temperature control over the source vapor concentration plays the key role for the growth. / Dissertation/Thesis / M.S. Electrical Engineering 2012