Thesis (Ph. D.)--Virginia Polytechnic Institute and State University, 1994. / Vita. Abstract. Includes bibliographical references (leaves 176-180). Also available via the Internet.

Thesis (Ph. D.)--Ohio state University, 1921. / Autobiography.

Thesis (doctoral)--Helsinki University of Technology, 2001. / Includes bibliographical references. Also available on the World Wide Web.

Thesis (M. Phil.)--University of Hong Kong, 1999. / Includes bibliographical references (leaves [59]-61).

Thesis (Ph. D.)--University of Wisconsin--Madison, 1929. / Typescript with manuscript equations. With this is bound: A two dimensional boundary value problem for the transmission of alternating currents through a semi-infinite heterogenous conducting medium / by Herbert Pu. Evans. Reprinted from Physical review, vol. 36, no. 10 (15 Nov. 1929), p. 1579-1588. Includes bibliographical references.

Thesis (PH. D.)--Johns Hopkins University, 1928. / Vita. Cover title. "Presented at the winter convention of the A.I.E.E., New York, N.Y., Jan. 27-31, 1930." Bibliography: p. 8-9.

Thesis (Ph. D.)--University of Wisconsin. / Bound with v. 3, no. 2-v. 3, no. 6 subsequent to publication. Bibliography: p. 153-162.

A series resonant L-C circuit in which either the inductor or the capacitor is nonlinear and which is excited by a sinusoidal voltage of a fixed frequency may have two steady-state responses. One of these responses is characterized by a high amplitude oscillation; the other by a low one. If the amplitude or frequency of the driving signal is varied slowly, the response may suddenly change or "jump" to the other state. As a result, this phenomenon has been called jump resonance, or ferroresonance. Because the high and low resonant states could be considered as a 0 and 1 basis for digital logic operations, it was the purpose of this work to study the phenomenon and to investigate the possibility of using it in the design of digital logic elements. Equations which exhibit the necessary features were studied on an analogue computer. The results of the study were used as design criteria for the construction of an actual circuit and also as a basis for an approximate analytical study. The analytical study uses the Ritz method to find useful features of the responses. The results of previous users of this method have been extended to include equations with both second derivative coupling and non-symmetrical non-linearities. Based on the above studies, a prototype circuit was designed which has some of the basic properties of conventional flip-flop circuits. One of the main features of this circuit is that it is almost entirely made of reactive components and as a result has very low power consumption. The operation of the circuit is used to verify the validity of the approximations made in both the analogue simulation and the analytical study. The results obtained from the analogue study, the Ritz analysis, and the prototype circuit compare favorably with each other. Some suggestions for future work are given. / Applied Science, Faculty of / Electrical and Computer Engineering, Department of / Graduate

The goal of this thesis is to identify and to explore novel ACTFEL phosphor materials. Several important materials properties relevant to ACTFEL phosphor development are identified. All of these properties cannot be obtained simultaneously. Therefore, several key phosphor materials properties are identified as critical to the development of an ACTFEL phosphor. Then, using basic chemical trends, several classes of potential ACTFEL phosphors are identified. These materials systems include halides, nitrides, oxynitrides, oxides, sulfides, and inhibited concentration quenching systems. Representative materials from some of these proposed novel ACTFEL phosphor materials system are developed and evaluated as electroluminescence phosphors. Most of the ACTFEL devices made using these materials do not show any significant charge transfer. Detailed analysis indicates that the most probable cause of the lack of charge injection is that the phosphor threshold field is too large. This excessively large threshold field may be associated with the energy depth of the interface states, the low density of the interface states, or the large effective mass of the phosphor material explored. Several possible alternative solutions are presented to reduce the threshold field of the phosphor. These includes the use of thick-film insulator, the use of a charge injection layer, the use of a ceramic substrate coupled with a high temperature interface reaction, and the use of bulk doping of the phosphor. / Graduation date: 1997

Thèse : Sciences physiques : Paris, Faculté des sciences : 1863. / Page de titre comporte : No d'ordre 248. Thèses présentées a la Faculté des sciences de Paris pour le doctorat es sciences physiques... 1re thes̀e. Titre provenant de l'écran-titre.