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Development and Test of High-Temperature Piezoelectric Wafer Active Sensors for Structural Health MonitoringBao, Yuanye 12 1900 (has links)
High-temperature piezoelectric wafer active sensors (HT-PWAS) have been developed for structure health monitoring at hazard environments for decades. Different candidates have previously been tested under 270 °C and a new piezoelectric material langasite (LGS) was chosen here for a pilot study up to 700 °C. A preliminary study was performed to develop a high temperature sensor that utilizes langasite material. The Electromechanical impedance (E/M) method was chosen to detect the piezoelectric property. Experiments that verify the basic piezoelectric property of LGS at high temperature environments were carried out. Further validations were conducted by testing structures with attached LGS sensors at elevated temperature. Additionally, a detection system simulating the working process of LGS monitoring system was developed with PZT material at room temperature. This thesis, for the first time, (to the best of author’s knowledge) presents that langasite is ideal for making piezoelectric wafer active sensors for high temperature structure health monitoring applications.
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