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published_or_final_version / abstract / Physics / Master / Master of Philosophy

Call number: LD2668 .T4 1958 F79 / Master of Science

Photocopy of typescript. / Digitized by Kansas Correctional Industries

Fung Yun Ming. / Thesis (M.Phil.)--Chinese University of Hong Kong, 2001. / Includes bibliographical references (leaves 134-140). / Abstracts in English and Chinese. / Abstract --- p.I / Acknowledgement --- p.III / Contents --- p.IV / List of Figure captions --- p.VIII / List of Table captions --- p.XIII / Chapter Chapter 1 --- Introduction --- p.1 / Chapter Chapter 2 --- Theory and Applications / Chapter 2.1 --- Principle of field emission / Chapter 2.1.1 --- The Fowler-Nordheim Theory --- p.3 / Chapter 2.1.2 --- Field emission from metals --- p.6 / Chapter 2.1.3 --- Field emission from semiconductors --- p.8 / Chapter 2.1.3.1 --- Advantages and limitations of silicon --- p.9 / Chapter 2.1.4 --- Application of the Fowler-Nordheim theory --- p.10 / Chapter 2.1.5 --- Factors influencing field emission efficiency --- p.11 / Chapter 2.2 --- Applications --- p.11 / Chapter 2.2.1 --- Operation of a Field Emission Displays --- p.11 / Chapter 2.2.2 --- Basic structure of a Field Emission Displays --- p.13 / Chapter 2.2.3 --- Parameters relevant to applications --- p.15 / Chapter 2.3 --- The fabrication processes --- p.17 / Chapter 2.3.1 --- The anisotropic wet etching method --- p.18 / Chapter 2.3.2 --- The isotropic wet etching method --- p.19 / Chapter 2.3.3 --- Field emission from coating materials --- p.20 / Chapter 2.3.3.1 --- Coating enhancement --- p.20 / Chapter 2.3.3.2 --- Diamond and diamond-like films --- p.21 / Chapter 2.3.3.3 --- Metallic coatings --- p.22 / Chapter 2.3.3.4 --- Porous silicon coatings --- p.22 / Chapter 2.3.3.5 --- Silicon carbide coatings --- p.22 / Chapter 2.3.4 --- Fabrication of field emitters with gate --- p.23 / Chapter Chapter 3 --- Sample Preparation and Characterization Methods / Chapter 3.1 --- Sample preparation --- p.25 / Chapter 3.2 --- The fabrication process / Chapter 3.2.1 --- Isotropic etching of silicon / Chapter 3.2.1.1 --- The anodization process --- p.25 / Chapter 3.2.1.2 --- Porous silicon formation --- p.26 / Chapter 3.2.2 --- Anistropic etching of silicon --- p.27 / Chapter 3.2.3 --- The sputtering system --- p.28 / Chapter 3.2.4 --- The MEVVA Ion Source Implanter --- p.30 / Chapter 3.3 --- Characterization Methods / Chapter 3.3.1 --- Atomic Force Microscopy (AFM) --- p.32 / Chapter 3.3.2 --- Scanning Electron Microscopy (SEM) --- p.34 / Chapter 3.3.3 --- Field emission measurement / Chapter 3.3.3.1 --- Vacuum requirements --- p.35 / Chapter 3.3.3.2 --- Testing system / Chapter 3.3.3.3 --- Fluctuation of field emission --- p.38 / Chapter Chapter 4 --- Fabrication of Silicon Tips and their field emission charateristics / Chapter 4.1 --- The anodization etching process / Chapter 4.1.1 --- Introduction --- p.40 / Chapter 4.1.2 --- Experimental details --- p.42 / Chapter 4.1.3 --- Results and Discussions / Chapter 4.1.3.1 --- N type (100) sample --- p.45 / Chapter 4.1.3.2 --- Ntype(lll) sample --- p.60 / Chapter 4.1.3.3 --- Fluctuations of the emission current --- p.64 / Chapter 4.1.3.4 --- The effect of Concentration of HF solution on First Step Anodization --- p.68 / Chapter 4.1.3.5 --- The effect of the Concentration of HF solution on Second Step Anodization --- p.70 / Chapter 4.1.3.6 --- Gated silicon field emitter --- p.70 / Chapter 4.1.4 --- Conclusions --- p.73 / Chapter 4.2 --- Anisotropic texturing process / Chapter 4.2.1 --- Introduction --- p.74 / Chapter 4.2.2 --- Experimental details --- p.76 / Chapter 4.2.3 --- Results and Discussions --- p.78 / Chapter 4.2.4 --- Conclusion --- p.92 / Chapter 4.3 --- Formation of Porous Silicon Layer on silicon / Chapter 4.3.1 --- Introduction --- p.93 / Chapter 4.3.2 --- Experimental details --- p.94 / Chapter 4.3.3 --- Results and Discussions --- p.95 / Chapter 4.3.4 --- Conclusion --- p.100 / Chapter 4.4 --- Chapter Summary --- p.101 / Chapter Chapter 5 --- Improvement in the field emission characteristics of the silicon tips upon coating with low work function materials / Chapter 5.1 --- Amorphous carbon coating / Chapter 5.1.1 --- Introduction --- p.102 / Chapter 5.1.2 --- Experimental details --- p.103 / Chapter 5.1.3 --- Results and Discussions --- p.104 / Chapter 5.1.4 --- Conclusion --- p.118 / Chapter 5.2 --- Silicon carbide coated Silicon emitter by MEWA / Chapter 5.2.1 --- Introduction --- p.119 / Chapter 5.2.2 --- Experimental details --- p.120 / Chapter 5.2.3 --- Results and Discussions --- p.121 / Chapter 5.2.4 --- Conclusion --- p.125 / Chapter 5.3 --- Chapter Summary --- p.126 / Chapter Chapter 6 --- Conclusions --- p.127 / Reference --- p.134 / List of publications --- p.140

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Photocopy of typescript. / Bibliography: leaves 131-134. / viii, 134 leaves ill

Typescript (photocopy). / Digitized by Kansas Correctional Industries

Tsang Wei Mong. / Thesis (M.Phil.)--Chinese University of Hong Kong, 2002. / Includes bibliographical references (leaves 86-93). / Abstracts in English and Chinese. / Abstract --- p.i / Acknowledgement --- p.iv / Contents --- p.v / List of Figure Captions --- p.vi / List of Table Captions --- p.vii / Chapter Chapter 1 --- Introduction / Chapter 1.1 --- Introduction --- p.1 / Chapter 1.2 --- Theory of Electron Field Emission --- p.1 / Chapter 1.2.1 --- Fowler Nordheim Planar Field Emission Model for Metal --- p.2 / Chapter 1.3 --- Goal of this Project --- p.9 / Chapter Chapter 2 --- Sample Preparation and Characterization Methods / Chapter 2.1 --- Sample Preparation --- p.12 / Chapter 2.1.1 --- MEVVA Implantation System --- p.13 / Chapter 2.1.2 --- Implantation Conditions --- p.16 / Chapter 2.1.3 --- Simulation by SRIM --- p.17 / Chapter 2.2 --- Characterization Methods --- p.20 / Chapter 2.2.1 --- AFM and CAFM --- p.20 / Chapter 2.2.2 --- RBS --- p.22 / Chapter 2.2.3 --- XPS --- p.24 / Chapter 2.2.4 --- XRD --- p.27 / Chapter 2.2.5 --- TEM --- p.28 / Chapter 2.2.6 --- FE Measurement --- p.29 / Chapter Chapter 3 --- FE Properties of IBS SiC layers / Chapter 3.1 --- Introduction --- p.31 / Chapter 3.2 --- Field Enhancement Mechanisms for the IBS SiC Layers --- p.32 / Chapter 3.3 --- Embedded Conducting Grains (ECG) Model of Local Field Enhancement --- p.45 / Chapter 3.4 --- The Role of Conducting Grains in Field Enhancement --- p.48 / Chapter Chapter 4 --- FE Properties of W modified IBS SiC layer / Chapter 4.1 --- Introduction --- p.58 / Chapter 4.2 --- Experimental --- p.59 / Chapter 4.3 --- Phase and Structural Evolution of W Modified IBS SiC Layers --- p.60 / Chapter 4.3.1 --- XRD Results --- p.60 / Chapter 4.3.2 --- XPS Results --- p.64 / Chapter 4.3.3 --- TEM Results --- p.69 / Chapter 4.3.4 --- AFM Results --- p.74 / Chapter 4.4 --- Field Emission Properties --- p.76 / Chapter Chapter 5 --- Conclusion --- p.84 / Reference --- p.86 / List of Publications --- p.94 / Appendix --- p.96