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  • About
  • The Global ETD Search service is a free service for researchers to find electronic theses and dissertations. This service is provided by the Networked Digital Library of Theses and Dissertations.
    Our metadata is collected from universities around the world. If you manage a university/consortium/country archive and want to be added, details can be found on the NDLTD website.
1

New binding models for elemental semiconductors

Mercer, James Lee, Jr. 12 1900 (has links)
No description available.
2

The effect of local field corrections on the transport properties of solids

Saglam, Mesude January 1977 (has links)
The purpose of this work is to investigate local field type corrections to electrical transport properties and in particular small polaron hopping conductivity. The question of local field corrections to transport properties has been considered for some time. Recently this question has become of particular interest for small polaron hopping conduction. Such corrections were considered as a possible explanation for the large jump parameters inferred in fitting the electric field dependence of the electrical conductivity of certain transition metal oxide glasses in which conduction is believed to occur via thermally activated small polaron hopping. Local field corrections are well established in determining the dielectric constant and optical properties at a single atomic site. Tessman et al have shown that the assumption of a normal Lorentz term gives excellent agreement between computed and measured polarizabilities in alkali halide crystals at optical frequencies. Adler has proved, using a self-consistent field theory that the standard Lorentz term arises in the tight binding limit. Also a full quantum mechanical treatment of the frequency and wave-number dependent dielectric constant including local field effect has been given by Wiser. It is shown that the dielectric constant splits into an atomic term that describes the motion of the electron around each atom and an acceleration term which describes the motion from atom to atom and that acceleration term contains no local field correction. Lidiard has discussed Lorentz type corrections to the diffusion coefficient in ionic conductivity. He argued that no Lorentz correction should be applied, since the Lorentz cavity must always be centred on the hopping carrier; thus, the Lorentz internal field can do no work as the carrier moves from one site to another. This view is strongly supported by the close agreement between ionic diffusion coefficients obtained from conductivity data and NMR relaxation and isotopic diffusion. It has been argued by Munn in several papers without detailed justification that the microscopic mobility does give the polaron velocity in terms of a local field. This argument is in conflict with that of Lidiard. However this question had not been considered explicitly for the case of electrical transport in the hopping limit. It is the intent of the present work to study the local field problem. In the first chapter we give a general description of the local electric field concept which is straight review. Chapters II and III are concerned with the question of local field corrections to the small polaron hopping conduction and the Hall mobility. In Chapter IV the results of Chapter II are applied to ac impurity hopping conduction. Finally in Chapter V we study the band motion of electrons using a theory of transport based on quantum mechanical principles.
3

The electronic states of one-dimensional disordered systems.

January 1974 (has links)
Thesis (M.Phil.)--Chinese University of Hong Kong. / Bibliography: leaves 85-86.
4

MEASUREMENT OF ULTRAFAST RELAXATION TIMES IN SEMICONDUCTORS USING PICOSECOND PULSES

Smirl, Arthur Lee, 1944- January 1975 (has links)
No description available.
5

Screened-neighbor interaction effects on impurity band broadening and band-gap narrowing in semiconductors /

Kapadia, Varsha January 1983 (has links)
No description available.
6

Impurity band formation by screened interactions of neighboring impurities in semiconductors /

Cheng, Li-Pin B. January 1985 (has links)
No description available.
7

Parametrization of energy bands in zirconia

Rosenbauer, Martin 31 October 1991 (has links)
Graduation date: 1992
8

First-principle study of the atomic arrangement and electronic structure of an array of parallel GaN

Jhang, Zih-fang 03 August 2005 (has links)
The atomic arrangements and electronic structures of [0001] oriented GaN nanowires with different side surfaces have been studied by the first-principles molecular dynamics (MD) method and the conventional first-principles electronic structure calculation method. It is found that due to the dangling bond effects, the Ga-N bonds on the side surfaces of the nanowire tilt with Ga surface atoms moving inward. The radius of the nanowire is found to be reduced with respect to the wire truncated from a bulk GaN solid, which can be attributed to the surface tension effect. Due to the large ratio between the numbers of surface atoms and bulk atoms, the electronic structures of these nanowires are very different from those of bulk and films due to the large number of surface atoms or dangling-bond states, so that a bulk-like energy gap can not be clearly defined.
9

Synthesis of low band gap polymers /

Cammisa, Eduardo G., January 2000 (has links)
Thesis (M.Sc.)--Memorial University of Newfoundland, 2000. / Bibliography: leaves 95-101.
10

Helicon propagation in indium antimonide and gray tin

Peercy, P. S. January 1966 (has links)
Thesis (Ph. D.)--University of Wisconsin, 1966. / Typescript. Vita. eContent provider-neutral record in process. Description based on print version record. Includes bibliography.

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