Nonlinear luminescence quenching has been documented in numerous systems such as organic crystals, rare earth insulators, laser materials, semiconductors, and phosphors. In each of these systems nonlinear luminescence quenching occurs under conditions of high excitation density from interactions between excited centers, the result is an additional nonradiative decay pathway that lowers luminescence quantum efficiency. During investigations into the spectra and dynamics of Eu2O3, an apparent saturation dip in the excitation spectra of nano-sized Eu2O3 particles was observed. This thesis describes the investigation into the nature of the saturation effect. The samples studied using luminescent spectroscopy included micron sized Eu2O3 crystals of both cubic and monoclinic phases, nanocrystal monoclinic Eu2O3, and a large fused crystal of monoclinic Eu2O3. It was determined that the saturation effect was due to nonlinear luminescence quenching occurring at the wavelengths of absorption maxima. The mechanism of nonlinear luminescence quenching was concluded to be upconversion by energy transfer. / Master of Science

Thesis (Ph.D.)--Boston University / Lutetium oxide doped with europium oxide (Lu20 3:Eu3+) has been established to be a bright, dense scintillator materi al with vast potential in both medical and high resolution X-ray imaging applications. Unfortunately its commercial viability has been restricted due to the manufacturing and post treatment costs associated with device fabrication. This research was aimed at the development of two vapor deposition techniques; chemical and physical vapor deposition (CVD and PVD), to produce coatings of Lu203:Eu3+ for various X-ray imaging applications. A customized CVD process to codeposit Lu20 3 and Eu20 3 was developed using lutetium and europium chloride (LuCb and EuCI3) precursors and reacting with carbon dioxide (C02) and hydrogen (H2) . An in depth study was performed by systematically varying the process parameters to explore the deposition kinetics and identify the rate limiting steps and their effects on the growth morphology using both cold and hot wall CVD reactors. The activation energy for the kinetically limited deposition of Lu20 3 from the LuCI3 - Ar - C02 - H2 system was identified to be approximately 170 kJ/mol , which is significantly lower than expected. The predominant growth orientations were identified to be { 111} and { 100} , depending on the deposition conditions. As the temperature is increased, the growth orientation preference decreases to produce a randomly oriented growth at 1150°C. The scintillation and X-ray imaging characteristics of a co-deposited Lu203:Eu3+ thin film with a {100} orientation were measured, confirming the feasibility and applicability of the CVD system to produce thick scintillator x-ray imaging devices. A fundamental study of the PVD process was performed by sputtering of Lu203:Eu3+ using a single target magnetron sputtering gun. Systematic vatiations of the deposition parameters were used to understand the effect of the ejected flux kinetic energies and deposition rate on the deposit density, stress, optical and scintillation properties. The deposition system was subsequently optimized for rapid, dense growth of a 10 um thick Lu203:Eu3+ coating at elevated temperatures. The X-ray imaging properties were measured and the results yielded an X-ray imaging resolution slightly better than 1 um with the potential for 0.5 um with further optimization, a level never before attained.

Metal-insulator-metal (MIM) capacitors are used for analog, RF, and DRAM applications in ICs. The International Technology Roadmap for Semiconductors (ITRS) specifies continuing increase in capacitance density (> 7 fF/ m2), lower leakage current density (< 10 8 A/cm2), very low effective oxide thickness (EOT < 1 nm, for DRAM applications), and better capacitance density-voltage (C-V) linearity ( < 100 ppm/V2, for analog/RF applications). In addition, the maximum fabrication/processing temper-ature should not be greater than 400 0C, in order to be compatible with the thermal budget of back-end fabrication steps. Low dielectric constants of conventional SiO2 and Si3N4 capacitors limit the capacitance densities of these devices. Although scaling down of dielectric thickness increases the capacitance density, it results in large leakage current density and poor C-V linearity. In this work, the effects of high-k materials (Eu2O3, Gd2O3, TiO2) on the device performance of MIM capacitors are studied. The performance of multi-dielectric stack, and doped-dielectric stack devices are also investigated. The effects of anneal temperature, anneal ambient, anneal mode, and dielectric thickness on device performance are evaluated. C-V, current density-voltage (J-V), and reliability measurements are performed to benchmark the electrical performance, and this is correlated to the structural and material properties of the films through ellipsometry, scanning electron microscopy (SEM), X-ray diffraction (XRD), and X-ray photoelectron spectroscopy (XPS) measurements. High-performance MIM capacitors are fabricated by using (RF sputtered) Eu2O3 dielectric. The fabricated devices are subjected to different anneal conditions, to study their device performance. Forming gas (FG) and argon (Ar) annealed devices are shown to have higher capacitance densities (7 fF/ m2jF G), lower leakage current densities (3.2 10 8 A/cm2jAr at -1 V), and higher , compared to oxygen (O2) annealed de-vices ( 100kHz = 193 ppm/V2jO2). The electrical characterization results are correlated with the surface chemical states of the films through XPS measurements. The annealing ambient is shown to alter the surface chemical states, which, in turn, modulate the electrical characteristics. High-density MIM capacitors are fabricated by using (RF sputtered) Gd2O3, and Gd2O3-Eu2O3 stacked dielectrics. The fabricated Gd2O3 capacitors are also subjected to different anneal conditions, to study their device performance. Although Gd2O3 capacitors provide high capacitance density (15 fF/ m2), they suffer from high leakage current density, high , and poor reliability. Therefore, stacked dielectrics of Gd2O3 and Eu2O3 (Gd2O3/Eu2O3 and Eu2O3/Gd2O3) are fabricated to reduce leakage current density, improve , and improve reliability, with only a marginal reduction in capacitance density, compared to Gd2O3 capacitors. Density of defects and barrier/trap heights are extracted for the fabricated capacitors, and correlated with the device characteristics. High-performance MIM capacitors with bilayer dielectric stacks of (ALD-deposited) TiO2-ZrO2, and Si-doped ZrO2 are characterized. Devices with (ALD-deposited) TiO2/ ZrO2/TiO2 (TZT) and AlO-doped TZT stacks are also characterized. The influence of doping on the device performance is studied. The surface chemical states of the deposited films are analyzed by high-resolution XPS. The structural analysis of the samples is performed by XRD measurements, and this is correlated to the electrical characteristics of the devices. Reliability measurements are performed to study the effects of constant voltage and current stress on device performance. High capacitance density (> 45 fF/ m2), low leakage current density (< 5 10 8 A/cm2 at -1 V, for most devices), and sub-nm EOT are achieved. These parameters exceed the ITRS specifications for DRAM storage capacitors.