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Investigation of the Feasibility of Mode-Locked Semiconductor Devices as Excitation Sources for Two-Photon FluorescenceLogan, Andrew 12 1900 (has links)
<p> The potential of a mode-locked semiconductor laser oscillator as a short
pulse source for two-photon fluorescence microscopy is explored. Amplification
of the 1075 nrn laser is performed with a single pass semiconductor optical
amplifier or a ytterbium-doped fibre amplifier. The mode-locked diode oscillator
amplified by the Yb-doped fibre amplifier has been shown to produce
uncompressed pulses of 4-10 ps with an average power of up to ~0.8 W.
Compression with a single pass modified grating pair compressor reduces the
pulse duration to as short as 860 fs. The output power level can be easily scaled
to higher values. </p> <p> The ability to tightly focus the Yb-doped fibre amplifier beam and semiconductor optical amplifier beam for the purpose of microscopy is studied. Results indicate that the fibre performs close to an ideal Gaussian laser beam
source. The semiconductor optical amplifier beam does not focus as well.
Measurements suggest that regions of the beam, when focused, do not
significantly contribute to the generation of two-photon fluorescence. </p> <p> The efficiency of two-photon fluorescence generation of the two amplifiers is compared to that of the conventional two-photon excitation source: the mode-locked titanium sapphire laser. Results illustrate the need to improve certain operating parameters of the laser oscillator and two amplifiers to be considered practical for two-photon fluorescence microscopy. The mode-locked semiconductor laser oscillator amplified by the Yb-doped fibre amplifier is deemed to be close to being ready for two-photon imaging applications. </p> / Thesis / Master of Applied Science (MASc)
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