No description available.

Nowadays alternative energies are an extremely important topic and the possibility of using hydrogen as an energy carrier must be explored. Many problems infer the technological application of this abundant and powerful resource, one of them the possibility of storage. In the framework of suitable materials for hydrogen storage, magnesium has been the center of this study because it is cheap and the amount of stored hydrogen that it achieves (7.6 wt%) is extremely appealing. Nanostructure helps to overcome the slow hydrogen diffusion and the functionalization of surfaces with transition metals or oxides favors the hydrogen molecule dissociation/recombination. The aim of this research is the investigation of the metal-hydride transformation in magnesium nanoparticles synthesized by inert-gas condensation, exploiting the fact that they are a simple model system. The so produced nanostructured powder has been analyzed in response to nanoparticles surface functionalization by transition metal clusters, specifically palladium, nickel and titanium, chosen on the basis of their completely different Mg-related phase diagrams. The role of the intermetallic phases formed upon heating and hydrogenation treatments will be presented to provide a comprehensive picture of hydrogen sorption in this class of nanostructured storage materials.

No description available.

The possibility of combining different functionalities in a single device is of great relevance for further development of organic electronics in integrated components and circuitry. Organic light-emitting transistors (OLETs) have been demonstrated to be able to combine in a single device the electrical switching functionality of a field-effect transistor and the capability of light generation. A novel strategy in OLET realization is the tri-layer vertical hetero-junction. This configuration is similar to the bi-layer except for the presence of a new middle layer between the two transport layers. This “recombination” layer presents high emission quantum efficiency and OLED-like (Organic Light-Emitting Diode) vertical bulk mobility value. The key idea of the vertical tri-layer hetero-junction approach in realizing OLETs is that each layer has to be optimized according to its specific function (charge transport, energy transfer, radiative exciton recombination). Clearly, matching the overall device characteristics with the functional properties of the single materials composing the active region of the OFET, is a great challenge that requires a deep investigation of the morphological, optical and electrical features of the system. As in the case of the bi-layer based OLETs, it is clear that the interfaces between the dielectric and the bottom transport layer and between the recombination and the top transport layer are crucial for guaranteeing good ambipolar field-effect electrical characteristics. Moreover interfaces between the bottom transport and the recombination layer and between the recombination and the top transport layer should provide the favourable conditions for the charge percolation to happen in the recombination layer and form excitons. Organic light emitting transistor based on the tri-layer approach with external quantum efficiency out-performing the OLED state of the art has been recently demonstrated [Capelli et al., Nat. Mater. 9 (2010) 496-503] widening the scientific and technological interest in this field of research.

Many studies on the morphology, molecular orientation, device performance, substrate nature and growth parameter dependence have been carried out since the proposal of Sexithiophene (6T) for organic electronics [ ] However, these studies were mostly performed on films thicker than 20nm and without specifically addressing the relationship between morphology and molecular orientation within the nano and micro structures of ultrathin films of 0-3 monolayers. In 2004, the observation that in OFETs only the first few monolayers at the interface in contact with the gate insulator contribute to the charge transport [ ], underlined the importance to study submonolayer films and their evolution up to a few monolayers of thickness with appropriate experimental techniques. We present here a detailed Non-contact Atomic Force Microscopy and Scanning Tunneling Microscopy study on various substrates aiming at the investigation of growth mechanisms. Most reported similar studies are performed on ideal metals in UHV. However it is important to investigate the details of organic film growth on less ideal and even technological surfaces and device testpatterns. The present work addresses the growth of ultra thin organic films in-situ and quasi real-time by NC-AFM. An organic effusion cell is installed to evaporate the organic material directly onto the SPM sample scanning stage.

During the last decade advances in the field of sensor design and improved base materials have pushed the radiation hardness of the current silicon detector technology to impressive performance. It should allow operation of the tracking systems of the Large Hadron Collider (LHC) experiments at nominal luminosity (1034 cm-2s-1) for about 10 years. The current silicon detectors are unable to cope with such an environment. Silicon carbide (SiC), which has recently been recognized as potentially radiation hard, is now studied. In this work it was analyzed the effect of high energy neutron irradiation on 4H-SiC particle detectors. Schottky and junction particle detectors were irradiated with 1 MeV neutrons up to fluence of 1016 cm-2. It is well known that the degradation of the detectors with irradiation, independently of the structure used for their realization, is caused by lattice defects, like creation of point-like defect, dopant deactivation and dead layer formation and that a crucial aspect for the understanding of the defect kinetics at a microscopic level is the correct identification of the crystal defects in terms of their electrical activity. In order to clarify the defect kinetic it were carried out a thermal transient spectroscopy (DLTS and PICTS) analysis of different samples irradiated at increasing fluences. The defect evolution was correlated with the transport properties of the irradiated detector, always comparing with the un-irradiated one. The charge collection efficiency degradation of Schottky detectors induced by neutron irradiation was related to the increasing concentration of defects as function of the neutron fluence.

In this thesis I studied La0.7Sr0.3MnO3/Alq3/AlOx/Co organic spin valves, which are multifunctional devices showing an interesting interplay between magnetoresistive effects and memristive switching. In particular this work aims at elucidating the elusive mechanisms for spin injection and transport in this archetypal structure. While spin injection in organic materials was demonstrated by different spectroscopic techniques, the origin of magnetoresistive effect in organic spin valves is still debated. In fact, the Hanle effect, considered to be the only reliable proof for spin transport across the organic spacer layer, has not been observed in such a device, yet. I investigated the thickness and temperature dependence of charge transport and magnetoresistive properties, and demonstrated the absence of the Hanle effect. Moreover I studied how the resistance and magnetoresistance of our devices were affected by memristive switching, which turned out to be a fundamental tool to enlighten the comprehensive picture. Two clearly distinguishable conduction regimes have been found for non magnetoresistive and magnetoresistive devices. The former is compatible with models for charge transport in organic materials, the latter can be described by an equivalent circuit where metallic paths and hopping channels act in parallel. In the framework of this model, a coherent description for the interplay between MR and memristive switching can be given. SV signals can be explained as tunnel magnetoresistance (TMR) or ballistic magnetoresistance (BMR) occurring across shortened regions of the organic bulk, which is an explanation compatible with the absence of Hanle effect. This work demonstrates that SV signals can be explained without resorting to spin injection and transport into the organic layer.

Lo stretch film è una diffusa applicazione per imballaggio dei film in polietilene (PE), utilizzato per proteggere diversi prodotti di vari dimensioni e pesi. Una caratteristica fondamentale del film è la sua proprietà adesiva in virtù della quale il film può essere facilmente chiuso su se stesso. Tipicamente vengono scelti gradi lineari a bassa densità (LLDPE) con valori relativamente bassi di densità a causa delle loro buone prestazioni. Il mercato basa la scelta del materiale adesivo per tentativi piuttosto che in base alla conoscenza delle caratteristiche strutturali ottimali per l’applicazione. Come per i pressure sensitive adhesives, le proprietà adesive di film stretch in PE possono essere misurati mediante "peel testing". Esistono molti metodi standard internazionali ma i risultati di tali prove sono fortemente dipendenti dalla geometria di prova, sulla possibile deformazione plastica che si verificano nel peel arm(s), e la velocità e temperatura. Lo scopo del presente lavoro è quello di misurare l'energia di adesione Gc di film stretch di PE, su se stessi e su substrati diversi, sfruttando l'interpretazione della meccanica della frattura per tener conto dell'elevata flessibilità e deformabilità di tali film. Quindi, la dipendenza velocità/temperatura di Gc sarà studiata con riferimento diretto al comportamento viscoelastico lineare dei materiali utilizzati negli strati adesivi, per esplorare le relazioni struttura-proprietà che possono mettere in luce i meccanismi molecolari coinvolti nei processi di adesione e distacco. Nella presente caso, l’adesivo non è direttamente disponibile come materiale separato che può essere messo tra due superfici di prova e misurato per la determinazione delle sue proprietà. Il presupposto principale è che una parte, o fase, della complessa struttura semi-cristallina del PE possa funzionare come adesivo, e un importante risultato di questo studio può essere una migliore identificazione e caratterizzazione di questo "fase adesiva". / Stretch wrap is a widespread packaging application of Polyethylene (PE) films, used to held together and protect many possible products of varying number, sizes and weights. A key feature of stretch wrap films is their adhesive property, by virtue of which the wrap can be easily closed onto itself. Typically, Linear Low Density grades (LLDPEs) with comparatively low density values are chosen, because of their known good adhesive (“cling”) properties. The market relies on trial and error for the choice of the adhesive material rather than choose upon known optimal structure’s properties tailored for the application. As for pressure sensitive adhesives, the adhesive properties of PE stretch films can be measured by “peel testing”. Many international standard methods exist, and the results of such tests are strongly dependent on test geometry, on the possible plastic deformation occurring in the peel arm(s), and on peeling rate and temperature. The aim of the present work is to measure the adhesive energy Gc of PE stretch films onto themselves and on different substrates, by taking advantage of the fracture mechanics approach to account for the high flexibility and deformability of these films. The measured rate/temperature dependence of Gc will be studied with reference to the linear viscoelastic behaviour of the materials used in the adhesive layers, in order to explore the structure-property relationships which could enlighten the molecular mechanisms involved in the adhesion and detachment processes. In the present case, the “adhesive” is not available as a separate material which could be tested and sampled for determination of its properties. The main assumption is that some part, or phase, of the complex semi-crystalline polyethylene material works as an adhesive, and an important outcome of this study can be a better identification and characterization of this “adhesive phase”.

Semiconductor nanowires (NWs) are one- or quasi one-dimensional systems whose physical properties are unique as compared to bulk materials because of their nanoscaled sizes. They bring together quantum world and semiconductor devices. NWs-based technologies may achieve an impact comparable to that of current microelectronic devices if new challenges will be faced. This thesis primarily focuses on two different, cutting-edge aspects of research over semiconductor NW arrays as pivotal components of NW-based devices. The first part deals with the characterization of electrically active defects in NWs. It has been elaborated the set-up of a general procedure which enables to employ Deep Level Transient Spectroscopy (DLTS) to probe NW arrays’ defects. This procedure has been applied to perform the characterization of a specific system, i.e. Reactive Ion Etched (RIE) silicon NW arrays-based Schottky barrier diodes. This study has allowed to shed light over how and if growth conditions introduce defects in RIE processed silicon NWs. The second part of this thesis concerns the bowing induced by electron beam and the subsequent clustering of gallium arsenide NWs. After a justified rejection of the mechanisms previously reported in literature, an original interpretation of the electron beam induced bending has been illustrated. Moreover, this thesis has successfully interpreted the formation of NW clusters in the framework of the lateral collapse of fibrillar structures. These latter are both idealized models and actual artificial structures used to study and to mimic the adhesion properties of natural surfaces in lizards and insects (Gecko effect). Our conclusion are that mechanical and surface properties of the NWs, together with the geometry of the NW arrays, play a key role in their post-growth alignment. The same parameters open, then, to the benign possibility of locally engineering NW arrays in micro- and macro-templates.

The present thesis is focused on the study of innovative Si-based materials for third generation photovoltaics. In particular, silicon oxi-nitride (SiOxNy) thin films and multilayer of Silicon Rich Carbide (SRC)/Si have been characterized in view of their application in photovoltaics. SiOxNy is a promising material for applications in thin-film solar cells as well as for wafer based silicon solar cells, like silicon heterojunction solar cells. However, many issues relevant to the material properties have not been studied yet, such as the role of the deposition condition and precursor gas concentrations on the optical and electronic properties of the films, the composition and structure of the nanocrystals. The results presented in the thesis aim to clarify the effects of annealing and oxygen incorporation within nc-SiOxNy films on its properties in view of the photovoltaic applications. Silicon nano-crystals (Si NCs) embedded in a dielectric matrix were proposed as absorbers in all-Si multi-junction solar cells due to the quantum confinement capability of Si NCs, that allows a better match to the solar spectrum thanks to the size induced tunability of the band gap. Despite the efficient solar radiation absorption capability of this structure, its charge collection and transport properties has still to be fully demonstrated. The results presented in the thesis aim to the understanding of the transport mechanisms at macroscopic and microscopic scale. Experimental results on SiOxNy thin films and SRC/Si multilayers have been obtained at macroscopical and microscopical level using different characterizations techniques, such as Atomic Force Microscopy, Reflection and Transmission measurements, High Resolution Transmission Electron Microscopy, Energy-Dispersive X-ray spectroscopy and Fourier Transform Infrared Spectroscopy. The deep knowledge and improved understanding of the basic physical properties of these quite complex, multi-phase and multi-component systems, made by nanocrystals and amorphous phases, will contribute to improve the efficiency of Si based solar cells.