Diss.--Freie Univ.--Berlin, 1994. / Bibliogr. p. 413-436.

An experimental procedure which utilises rf plasma anodization to grow SiO2 films on silicon is described. The quality of these films is suitable for MOS technology and growth rates are practical for industrial manufacturing. The electrical and physical propeties of the silicon dioxide films have been studied with comparisons being made, whenever possible, to results obtained with films grown by other methods. A novel method to determine the optical properties of thin films from single angle reflectance measurements has been devised in order to accurately monitor in-situ the growth of the thin films described in this work. Large-area aluminum-silicon Schottky photodiodes with wide spectral response have been manufactured using plasma anodization as a processing step. An aluminum oxide coating is used for passivation, shaping of the spectral response and enhancement of the photoresponse throughout the spectrum of interest. The heights of the aluminum-p-type and -n-type silicon barriers are reported and a comparison is made between the experimental spectral response and a theoretical model. / Applied Science, Faculty of / Electrical and Computer Engineering, Department of / Graduate

The plasma anodization of polycrystalline niobium samples has been undertaken using a d.c. glow discharge in oxygen. The apparatus used, which has facilities for in situ ellipsometry measurements and sample temperature control, is described. Anodizations were carried out at various constant current densities up to 1.5 mA cm⁻² , and Langmuir probes were used to estimate the volt drop across the oxide during growth. The ellipsometry measurements yield oxide thickness and refractive index, and indicate that the films have a two-layer structure. Ionic currents are calculated from growth rates using Faraday's Law. Ionic current and oxide field strength data are analyzed and compared with published solution anodization results on the basis of the classical model of ionic conduction at high field strengths. The permittivity and loss factor of the oxide films are deduced from bridge measurements on capacitor structures produced by depositing counterelectrodes on the oxide surface. The introduction of water into the discharge was investigated, and found to affect the oxide growth rate. / Applied Science, Faculty of / Electrical and Computer Engineering, Department of / Graduate

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Thesis (Ph. D.)--University of Texas at Austin, 2000. / Vita. Includes bibliographical references (leaves 164-173). Available also in a digital version from Dissertation Abstracts.

Thesis (Ph. D.)--Lehigh University, 2001. / Includes bibliographical references and vita.

Not available / text

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Thesis (Ph.D.) -- McMaster University, 1997. / Includes bibliographical references [p. 133-146) Also available via World Wide Web.